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MJW0302AT4TL . Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: MJW0302AT4TL
   Material: Si
   Polaridad de transistor: PNP

ESPECIFICACIONES MÁXIMAS


   Disipación total del dispositivo (Pc): 150 W
   Tensión colector-base (Vcb): 250 V
   Tensión colector-emisor (Vce): 250 V
   Tensión emisor-base (Veb): 5 V
   Corriente del colector DC máxima (Ic): 15 A
   Temperatura operativa máxima (Tj): 150 °C

CARACTERÍSTICAS ELÉCTRICAS


   Ganancia de corriente contínua (hfe): 75
   Paquete / Cubierta: TO3PN
 

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MJW0302AT4TL Datasheet (PDF)

 ..1. Size:1718K  cn sps
 mjw0302at4tl.pdf pdf_icon

MJW0302AT4TL

MJW0302AT4TLDESCRIPTIONHigh DC current amplifier rateh 50-200@V = 5V,I = 1AFE: CE CMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSHigh power audio, disk head positioners and other linearapplications.ABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV Collector-Base Voltage -250 VCBOV Collector-Emitter

 6.1. Size:67K  onsemi
 mjw0281a mjw0302a.pdf pdf_icon

MJW0302AT4TL

MJW0281A (NPN)MJW0302A (PNP)Preferred DevicesComplementary NPN-PNPPower Bipolar TransistorsThese complementary devices are lower power versions of thepopular MJW3281A and MJW1302A audio output transistors. Withsuperior gain linearity and safe operating area performance, thesehttp://onsemi.comtransistors are ideal for high fidelity audio amplifier output stages andother linea

 6.2. Size:862K  cn sptech
 mjw0302a.pdf pdf_icon

MJW0302AT4TL

SPTECH Product SpecificationSPTECH Silicon PNP Power Transistor MJW0302ADESCRIPTIONHigh DC current amplifier rateh 50-200@V = 5V,I = 1AFE: CE CMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSHigh power audio, disk head positioners and other linearapplications.ABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UN

 7.1. Size:969K  cn sptech
 mjw0302g.pdf pdf_icon

MJW0302AT4TL

SPTECH Product SpecificationSPTECH Silicon PNP Power TransistorMJW0302GDESCRIPTIONHigh Collector-Emitter Breakdown Voltage-: V =250V(Min)(BR)CEOGood Linearity of hFEComplement to Type NJW0281GAPPLICATIONSDesigned for high fidelity audio amplifier andother linear applicationsABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV Collector-Base Vol

MOSTRAR MÁS

Otros transistores... 2SC5570T7TL , BU406DT9TL , BU406T1TL , BU508AT4TL , BU941PT4TL , BU941TT1TL , FJL6920T7TL , MJW0281AT4TL , 2SC4793 , MJW3281AT4TL , NJW0281GT4TL , NJW0302GT4TL , NJW1302GT4TL , NJW3281GT4TL , TIP35CT4TL , TIP36CT4TL , CD568B .

 

 
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