All Transistors. MJW0302AT4TL Datasheet

 

MJW0302AT4TL Datasheet, Equivalent, Cross Reference Search


   Type Designator: MJW0302AT4TL
   Material of Transistor: Si
   Polarity: PNP
   Maximum Collector Power Dissipation (Pc): 150 W
   Maximum Collector-Base Voltage |Vcb|: 250 V
   Maximum Collector-Emitter Voltage |Vce|: 250 V
   Maximum Emitter-Base Voltage |Veb|: 5 V
   Maximum Collector Current |Ic max|: 15 A
   Max. Operating Junction Temperature (Tj): 150 °C
   Forward Current Transfer Ratio (hFE), MIN: 75
   Noise Figure, dB: -
   Package: TO3PN

 MJW0302AT4TL Transistor Equivalent Substitute - Cross-Reference Search

   

MJW0302AT4TL Datasheet (PDF)

 ..1. Size:1718K  cn sps
mjw0302at4tl.pdf

MJW0302AT4TL
MJW0302AT4TL

MJW0302AT4TLDESCRIPTIONHigh DC current amplifier rateh 50-200@V = 5V,I = 1AFE: CE CMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSHigh power audio, disk head positioners and other linearapplications.ABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV Collector-Base Voltage -250 VCBOV Collector-Emitter

 6.1. Size:67K  onsemi
mjw0281a mjw0302a.pdf

MJW0302AT4TL
MJW0302AT4TL

MJW0281A (NPN)MJW0302A (PNP)Preferred DevicesComplementary NPN-PNPPower Bipolar TransistorsThese complementary devices are lower power versions of thepopular MJW3281A and MJW1302A audio output transistors. Withsuperior gain linearity and safe operating area performance, thesehttp://onsemi.comtransistors are ideal for high fidelity audio amplifier output stages andother linea

 6.2. Size:862K  cn sptech
mjw0302a.pdf

MJW0302AT4TL
MJW0302AT4TL

SPTECH Product SpecificationSPTECH Silicon PNP Power Transistor MJW0302ADESCRIPTIONHigh DC current amplifier rateh 50-200@V = 5V,I = 1AFE: CE CMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSHigh power audio, disk head positioners and other linearapplications.ABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UN

 7.1. Size:969K  cn sptech
mjw0302g.pdf

MJW0302AT4TL
MJW0302AT4TL

SPTECH Product SpecificationSPTECH Silicon PNP Power TransistorMJW0302GDESCRIPTIONHigh Collector-Emitter Breakdown Voltage-: V =250V(Min)(BR)CEOGood Linearity of hFEComplement to Type NJW0281GAPPLICATIONSDesigned for high fidelity audio amplifier andother linear applicationsABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV Collector-Base Vol

Datasheet: 2SA1179M4 , 2SA1179M5 , 2SA1179M6 , 2SA1179M7 , 2SA118 , 2SA1180 , 2SA1180A , 2SA1182 , A1015 , 2SA1182Y , 2SA1183 , 2SA1184 , 2SA1185 , 2SA1186 , 2SA1186O , 2SA1186P , 2SA1186Y .

 

 
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