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MJW3281AT4TL . Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: MJW3281AT4TL
   Material: Si
   Polaridad de transistor: NPN

ESPECIFICACIONES MÁXIMAS


   Disipación total del dispositivo (Pc): 200 W
   Tensión colector-base (Vcb): 230 V
   Tensión colector-emisor (Vce): 230 V
   Tensión emisor-base (Veb): 5 V
   Corriente del colector DC máxima (Ic): 15 A
   Temperatura operativa máxima (Tj): 150 °C

CARACTERÍSTICAS ELÉCTRICAS


   Ganancia de corriente contínua (hfe): 50
   Paquete / Cubierta: TO3PN
 

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MJW3281AT4TL Datasheet (PDF)

 ..1. Size:1288K  cn sps
 mjw3281at4tl.pdf pdf_icon

MJW3281AT4TL

MJW3281AT4TLDESCRIPTIONHigh DC current amplifier rateh 50-200@V = 5V,I = 1AFE: CE CMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSHigh power audio, disk head positioners and other linearapplications.ABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV Collector-Base Voltage 230 VCBOV Collector-Emitter V

 6.1. Size:154K  onsemi
 mjw3281a mjw1302a.pdf pdf_icon

MJW3281AT4TL

MJW3281A (NPN)MJW1302A (PNP)Complementary NPN-PNPSilicon Power BipolarTransistorshttp://onsemi.comThe MJW3281A and MJW1302A are PowerBaset powertransistors for high power audio, disk head positioners and other linear15 AMPERESapplications.COMPLEMENTARYFeaturesSILICON POWER TRANSISTORS Designed for 100 W Audio Frequency230 VOLTS 200 WATTS Gain Complementary:

 6.2. Size:150K  onsemi
 mjw3281ag.pdf pdf_icon

MJW3281AT4TL

MJW3281A (NPN)MJW1302A (PNP)Complementary NPN-PNPSilicon Power BipolarTransistorshttp://onsemi.comThe MJW3281A and MJW1302A are PowerBaset powertransistors for high power audio, disk head positioners and other linear15 AMPERESapplications.COMPLEMENTARYFeaturesSILICON POWER TRANSISTORS Designed for 100 W Audio Frequency230 VOLTS 200 WATTS Gain Complementary:

 6.3. Size:365K  cn sptech
 mjw3281a.pdf pdf_icon

MJW3281AT4TL

SPTECH Product SpecificationMJW3281ASPTECH Silicon NPN Power TransistorDESCRIPTIONHigh DC current amplifier rateh 50-200@V = 5V,I = 1AFE: CE CMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSHigh power audio, disk head positioners and other linearapplications.ABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE U

MOSTRAR MÁS

Otros transistores... 2SA1803O , 2SA1803R , 2SA1804 , 2SA1804O , 2SA1804R , 2SA1805 , 2SA1805O , 2SA1805R , 8050 , 2SA181 , 2SA1810 , 2SA1810B , 2SA1810C , 2SA1811 , 2SA1815 , 2SA1815-3 , 2SA1815-4 .

History: JE9092 | TIP107

 

 
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