All Transistors. MJW3281AT4TL Datasheet

 

MJW3281AT4TL Datasheet and Replacement


   Type Designator: MJW3281AT4TL
   Material of Transistor: Si
   Polarity: NPN
   Maximum Collector Power Dissipation (Pc): 200 W
   Maximum Collector-Base Voltage |Vcb|: 230 V
   Maximum Collector-Emitter Voltage |Vce|: 230 V
   Maximum Emitter-Base Voltage |Veb|: 5 V
   Maximum Collector Current |Ic max|: 15 A
   Max. Operating Junction Temperature (Tj): 150 °C
   Forward Current Transfer Ratio (hFE), MIN: 50
   Noise Figure, dB: -
   Package: TO3PN
 

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MJW3281AT4TL Datasheet (PDF)

 ..1. Size:1288K  cn sps
 mjw3281at4tl.pdf pdf_icon

MJW3281AT4TL

MJW3281AT4TLDESCRIPTIONHigh DC current amplifier rateh 50-200@V = 5V,I = 1AFE: CE CMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSHigh power audio, disk head positioners and other linearapplications.ABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV Collector-Base Voltage 230 VCBOV Collector-Emitter V

 6.1. Size:154K  onsemi
 mjw3281a mjw1302a.pdf pdf_icon

MJW3281AT4TL

MJW3281A (NPN)MJW1302A (PNP)Complementary NPN-PNPSilicon Power BipolarTransistorshttp://onsemi.comThe MJW3281A and MJW1302A are PowerBaset powertransistors for high power audio, disk head positioners and other linear15 AMPERESapplications.COMPLEMENTARYFeaturesSILICON POWER TRANSISTORS Designed for 100 W Audio Frequency230 VOLTS 200 WATTS Gain Complementary:

 6.2. Size:150K  onsemi
 mjw3281ag.pdf pdf_icon

MJW3281AT4TL

MJW3281A (NPN)MJW1302A (PNP)Complementary NPN-PNPSilicon Power BipolarTransistorshttp://onsemi.comThe MJW3281A and MJW1302A are PowerBaset powertransistors for high power audio, disk head positioners and other linear15 AMPERESapplications.COMPLEMENTARYFeaturesSILICON POWER TRANSISTORS Designed for 100 W Audio Frequency230 VOLTS 200 WATTS Gain Complementary:

 6.3. Size:365K  cn sptech
 mjw3281a.pdf pdf_icon

MJW3281AT4TL

SPTECH Product SpecificationMJW3281ASPTECH Silicon NPN Power TransistorDESCRIPTIONHigh DC current amplifier rateh 50-200@V = 5V,I = 1AFE: CE CMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSHigh power audio, disk head positioners and other linearapplications.ABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE U

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Datasheet: BU406DT9TL , BU406T1TL , BU508AT4TL , BU941PT4TL , BU941TT1TL , FJL6920T7TL , MJW0281AT4TL , MJW0302AT4TL , BC327 , NJW0281GT4TL , NJW0302GT4TL , NJW1302GT4TL , NJW3281GT4TL , TIP35CT4TL , TIP36CT4TL , CD568B , ISCE1938P .

History: GS2012 | BU608D | NSVMUN5212DW1T1G | CEN-U56 | BCW75 | MJ424 | KRA121S

Keywords - MJW3281AT4TL transistor datasheet

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