NJW0281GT4TL . Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: NJW0281GT4TL
Material: Si
Polaridad de transistor: NPN
ESPECIFICACIONES MÁXIMAS
Disipación total del dispositivo (Pc): 150 W
Tensión colector-base (Vcb): 250 V
Tensión colector-emisor (Vce): 250 V
Tensión emisor-base (Veb): 5 V
Corriente del colector DC máxima (Ic): 15 A
Temperatura operativa máxima (Tj): 150 °C
CARACTERÍSTICAS ELÉCTRICAS
Transición de frecuencia (ft): 20 MHz
Capacitancia de salida (Cc): 700(max) pF
Ganancia de corriente contínua (hfe): 75
Paquete / Cubierta: TO3PN
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NJW0281GT4TL Datasheet (PDF)
njw0281gt4tl.pdf

NJW0281GT4TLDESCRIPTIONHigh Collector-Emitter Breakdown Voltage-: V =250V(Min)(BR)CEOGood Linearity of hFEComplement to Type NJW0302GAPPLICATIONSDesigned for high fidelity audio amplifier andother linear applicationsABSOLUTE MAXIMUM RATINGS(Ta=25)SYMBOL PARAMETER VALUE UNITV Collector-Base Voltage 250 VCBOV Collector-Emitter Voltage 250 VCEOV Emitter
njw0281g njw0302g.pdf

NJW0281G (NPN)NJW0302G (PNP)Preferred DevicesComplementary NPN-PNPPower Bipolar TransistorsThese complementary devices are lower power versions of thepopular NJW3281G and NJW1302G audio output transistors. Withhttp://onsemi.comsuperior gain linearity and safe operating area performance, thesetransistors are ideal for high fidelity audio amplifier output stages and15 AMPERES
njw0281g.pdf

Silicon NPN transistorPower Amplifier ApplicationsComplementary to NJW0302GHigh collector voltage:VCEO=230V (min)Recommended for 100-W high-fidelity audio frequency amplifierOutput stageNote1: Using continuously under heavy loads (e.g. the application ofhigh temperature/current/voltage and the significant change intemperature, etc.) may cause this product to decrease in
njw0281g.pdf

NJW0281GTransistor SiliconNPNTripleDiffusedTypeNJW0281GPower Amplifier Applications ComplementarytoNJW0302G Highcollector voltage:VCEO=230V (min) Recommendedfor 100-Whigh-fidelity audiofrequencyamplifierOutput stageNote1: Usingcontinuouslyunder heavyloads (e.g. theapplicationof hightemperature/current/voltageandthesignificant changeintemperature, etc.) may causethis product
Otros transistores... BU406T1TL , BU508AT4TL , BU941PT4TL , BU941TT1TL , FJL6920T7TL , MJW0281AT4TL , MJW0302AT4TL , MJW3281AT4TL , TIP31C , NJW0302GT4TL , NJW1302GT4TL , NJW3281GT4TL , TIP35CT4TL , TIP36CT4TL , CD568B , ISCE1938P , ISCN440P .
History: TS7988 | BLX36 | BD262B | ST13007D
History: TS7988 | BLX36 | BD262B | ST13007D



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