Биполярный транзистор NJW0281GT4TL - описание производителя. Основные параметры. Даташиты.
Наименование производителя: NJW0281GT4TL
Тип материала: Si
Полярность: NPN
Максимальная рассеиваемая мощность (Pc): 150 W
Макcимально допустимое напряжение коллектор-база (Ucb): 250 V
Макcимально допустимое напряжение коллектор-эмиттер (Uce): 250 V
Макcимально допустимое напряжение эмиттер-база (Ueb): 5 V
Макcимальный постоянный ток коллектора (Ic): 15 A
Предельная температура PN-перехода (Tj): 150 °C
Граничная частота коэффициента передачи тока (ft): 20 MHz
Ёмкость коллекторного перехода (Cc): 700(max) pf
Статический коэффициент передачи тока (hfe): 75
Корпус транзистора: TO3PN
Аналоги (замена) для NJW0281GT4TL
NJW0281GT4TL Datasheet (PDF)
njw0281gt4tl.pdf
NJW0281GT4TLDESCRIPTIONHigh Collector-Emitter Breakdown Voltage-: V =250V(Min)(BR)CEOGood Linearity of hFEComplement to Type NJW0302GAPPLICATIONSDesigned for high fidelity audio amplifier andother linear applicationsABSOLUTE MAXIMUM RATINGS(Ta=25)SYMBOL PARAMETER VALUE UNITV Collector-Base Voltage 250 VCBOV Collector-Emitter Voltage 250 VCEOV Emitter
njw0281g njw0302g.pdf
NJW0281G (NPN)NJW0302G (PNP)Preferred DevicesComplementary NPN-PNPPower Bipolar TransistorsThese complementary devices are lower power versions of thepopular NJW3281G and NJW1302G audio output transistors. Withhttp://onsemi.comsuperior gain linearity and safe operating area performance, thesetransistors are ideal for high fidelity audio amplifier output stages and15 AMPERES
njw0281g.pdf
Silicon NPN transistorPower Amplifier ApplicationsComplementary to NJW0302GHigh collector voltage:VCEO=230V (min)Recommended for 100-W high-fidelity audio frequency amplifierOutput stageNote1: Using continuously under heavy loads (e.g. the application ofhigh temperature/current/voltage and the significant change intemperature, etc.) may cause this product to decrease in
njw0281g.pdf
NJW0281GTransistor SiliconNPNTripleDiffusedTypeNJW0281GPower Amplifier Applications ComplementarytoNJW0302G Highcollector voltage:VCEO=230V (min) Recommendedfor 100-Whigh-fidelity audiofrequencyamplifierOutput stageNote1: Usingcontinuouslyunder heavyloads (e.g. theapplicationof hightemperature/current/voltageandthesignificant changeintemperature, etc.) may causethis product
njw0281g.pdf
SPTECH Product SpecificationSPTECH Silicon NPN Power TransistorNJW0281GDESCRIPTIONHigh Collector-Emitter Breakdown Voltage-: V =250V(Min)(BR)CEOGood Linearity of hFEComplement to Type NJW0302GAPPLICATIONSDesigned for high fidelity audio amplifier andother linear applicationsABSOLUTE MAXIMUM RATINGS(Ta=25)SYMBOL PARAMETER VALUE UNITV Collector-Base Voltag
njw0281g.pdf
isc Silicon NPN Power Transistor NJW0281GDESCRIPTIONHigh Collector-Emitter Breakdown Voltage-: V =250V(Min)(BR)CEOGood Linearity of hFEComplement to Type NJW0302GMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for high fidelity audio amplifier andother linear applicationsABSOLUTE MAXIMUM RATINGS(Ta=25)
Другие транзисторы... 2SA1801 , 2SA1802 , 2SA1802A , 2SA1803 , 2SA1803O , 2SA1803R , 2SA1804 , 2SA1804O , BD777 , 2SA1805 , 2SA1805O , 2SA1805R , 2SA1806 , 2SA181 , 2SA1810 , 2SA1810B , 2SA1810C .
Список транзисторов
Обновления
BJT: SBT42 | 2SA200-Y | 2SA200-O | 2SD882-Q | 2SD882-P | 2SD882-E | 2SC945-L | 2SC945-H | 2SC4226-R23 | 2SC3357-F | 2SC3357-E | 2SC3356-R26 | 2SC3356-R24 | 2SC3356-R23 | 2SB772-Q | 2SB772-P | 2SB772-E | 2SA1015-L | 2SA1015-H | HSS8550 | HSS8050