All Transistors. NJW0281GT4TL Datasheet

 

NJW0281GT4TL Datasheet and Replacement


   Type Designator: NJW0281GT4TL
   Material of Transistor: Si
   Polarity: NPN
   Maximum Collector Power Dissipation (Pc): 150 W
   Maximum Collector-Base Voltage |Vcb|: 250 V
   Maximum Collector-Emitter Voltage |Vce|: 250 V
   Maximum Emitter-Base Voltage |Veb|: 5 V
   Maximum Collector Current |Ic max|: 15 A
   Max. Operating Junction Temperature (Tj): 150 °C
   Transition Frequency (ft): 20 MHz
   Collector Capacitance (Cc): 700(max) pF
   Forward Current Transfer Ratio (hFE), MIN: 75
   Noise Figure, dB: -
   Package: TO3PN
 

 NJW0281GT4TL Substitution

   - BJT ⓘ Cross-Reference Search

   

NJW0281GT4TL Datasheet (PDF)

 ..1. Size:1784K  cn sps
njw0281gt4tl.pdf pdf_icon

NJW0281GT4TL

NJW0281GT4TLDESCRIPTIONHigh Collector-Emitter Breakdown Voltage-: V =250V(Min)(BR)CEOGood Linearity of hFEComplement to Type NJW0302GAPPLICATIONSDesigned for high fidelity audio amplifier andother linear applicationsABSOLUTE MAXIMUM RATINGS(Ta=25)SYMBOL PARAMETER VALUE UNITV Collector-Base Voltage 250 VCBOV Collector-Emitter Voltage 250 VCEOV Emitter

 6.1. Size:80K  onsemi
njw0281g njw0302g.pdf pdf_icon

NJW0281GT4TL

NJW0281G (NPN)NJW0302G (PNP)Preferred DevicesComplementary NPN-PNPPower Bipolar TransistorsThese complementary devices are lower power versions of thepopular NJW3281G and NJW1302G audio output transistors. Withhttp://onsemi.comsuperior gain linearity and safe operating area performance, thesetransistors are ideal for high fidelity audio amplifier output stages and15 AMPERES

 6.2. Size:1360K  cn evvo
njw0281g.pdf pdf_icon

NJW0281GT4TL

Silicon NPN transistorPower Amplifier ApplicationsComplementary to NJW0302GHigh collector voltage:VCEO=230V (min)Recommended for 100-W high-fidelity audio frequency amplifierOutput stageNote1: Using continuously under heavy loads (e.g. the application ofhigh temperature/current/voltage and the significant change intemperature, etc.) may cause this product to decrease in

 6.3. Size:1183K  cn minos
njw0281g.pdf pdf_icon

NJW0281GT4TL

NJW0281GTransistor SiliconNPNTripleDiffusedTypeNJW0281GPower Amplifier Applications ComplementarytoNJW0302G Highcollector voltage:VCEO=230V (min) Recommendedfor 100-Whigh-fidelity audiofrequencyamplifierOutput stageNote1: Usingcontinuouslyunder heavyloads (e.g. theapplicationof hightemperature/current/voltageandthesignificant changeintemperature, etc.) may causethis product

Datasheet: BU406T1TL , BU508AT4TL , BU941PT4TL , BU941TT1TL , FJL6920T7TL , MJW0281AT4TL , MJW0302AT4TL , MJW3281AT4TL , TIP31C , NJW0302GT4TL , NJW1302GT4TL , NJW3281GT4TL , TIP35CT4TL , TIP36CT4TL , CD568B , ISCE1938P , ISCN440P .

History: KT640V-2

Keywords - NJW0281GT4TL transistor datasheet

 NJW0281GT4TL cross reference
 NJW0281GT4TL equivalent finder
 NJW0281GT4TL lookup
 NJW0281GT4TL substitution
 NJW0281GT4TL replacement

 

 
Back to Top

 


 
.