NJW0302GT4TL Todos los transistores

NJW0302GT4TL DESCRIPTION High Collector-Emitter Breakdown Voltage- V =250V(Min) (BR)CEO Good Linearity of h FE Complement to Type NJW0281G APPLICATIONS Designed for high fidelity audio amplifier and other linear applications ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UNIT V Collector-Base Voltage -250 V CBO V Collector-Emitter Voltage -250 V CEO Coll

NJW0281G (NPN) NJW0302G (PNP) Preferred Devices Complementary NPN-PNP Power Bipolar Transistors These complementary devices are lower power versions of the popular NJW3281G and NJW1302G audio output transistors. With http //onsemi.com superior gain linearity and safe operating area performance, these transistors are ideal for high fidelity audio amplifier output stages and 15 AMPERES

NJW0302G Silicon PNP transistor Power Amplifier Applications Complementary to NJW0281G High collector voltage VCEO=-230V(min) Recommended for 100-W high-fidelity audio frequency amplifier Output stage Note Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to de

NJW0302G Transistor Silicon PNP Epitaxial Type NJW0302G Power Amplifier Applications Complementaryto NJW0281G High collector voltage VCEO=-230V (min) Recommendedfor 100-Whigh-fidelity audiofrequency amplifier Output stage Note Using continuously under heavy loads (e.g. theapplication of hightemperature/current/voltageandthe significant change intemperature, etc.) may causethis produc

isc Silicon PNP Power Transistor NJW0302G DESCRIPTION High Collector-Emitter Breakdown Voltage- V = -250V(Min) (BR)CEO Good Linearity of h FE Complement to Type NJW0281G Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for high fidelity audio amplifier and other linear applications ABSOLUTE MAXIMUM RATINGS(Ta=25