NJW0302GT4TL . Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: NJW0302GT4TL
Material: Si
Polaridad de transistor: PNP
ESPECIFICACIONES MÁXIMAS
Disipación total del dispositivo (Pc): 150 W
Tensión colector-base (Vcb): 250 V
Tensión colector-emisor (Vce): 250 V
Tensión emisor-base (Veb): 5 V
Corriente del colector DC máxima (Ic): 15 A
Temperatura operativa máxima (Tj): 150 °C
CARACTERÍSTICAS ELÉCTRICAS
Ganancia de corriente contínua (hfe): 75
Paquete / Cubierta: TO3PN
Búsqueda de reemplazo de transistor bipolar NJW0302GT4TL
NJW0302GT4TL Datasheet (PDF)
njw0302gt4tl.pdf
![](https://alltransistors.com/ad/pdf_icon.gif)
NJW0302GT4TLDESCRIPTIONHigh Collector-Emitter Breakdown Voltage-: V =250V(Min)(BR)CEOGood Linearity of hFEComplement to Type NJW0281GAPPLICATIONSDesigned for high fidelity audio amplifier andother linear applicationsABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV Collector-Base Voltage -250 VCBOV Collector-Emitter Voltage -250 VCEOColl
njw0281g njw0302g.pdf
![](https://alltransistors.com/ad/pdf_icon.gif)
NJW0281G (NPN)NJW0302G (PNP)Preferred DevicesComplementary NPN-PNPPower Bipolar TransistorsThese complementary devices are lower power versions of thepopular NJW3281G and NJW1302G audio output transistors. Withhttp://onsemi.comsuperior gain linearity and safe operating area performance, thesetransistors are ideal for high fidelity audio amplifier output stages and15 AMPERES
njw0302g.pdf
![](https://alltransistors.com/ad/pdf_icon.gif)
NJW0302GTransistor Silicon PNP Epitaxial TypeNJW0302GPower Amplifier ApplicationsComplementaryto NJW0281GHigh collector voltage:VCEO=-230V (min)Recommendedfor 100-Whigh-fidelity audiofrequency amplifierOutput stageNote: Using continuously under heavy loads (e.g. theapplicationof hightemperature/current/voltageandthe significant changeintemperature, etc.) may causethis produc
njw0302g.pdf
![](https://alltransistors.com/ad/pdf_icon.gif)
isc Silicon PNP Power Transistor NJW0302GDESCRIPTIONHigh Collector-Emitter Breakdown Voltage-: V = -250V(Min)(BR)CEOGood Linearity of hFEComplement to Type NJW0281GMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for high fidelity audio amplifier andother linear applicationsABSOLUTE MAXIMUM RATINGS(Ta=25
Otros transistores... 2N3200 , 2N3201 , 2N3202 , 2N3203 , 2N3204 , 2N3205 , 2N3206 , 2N3207 , B772 , 2N3209 , 2N3209AQF , 2N3209CSM , 2N3209DCSM , 2N3209L , 2N321 , 2N3210 , 2N3211 .