NJW0302GT4TL Datasheet, Equivalent, Cross Reference Search
Type Designator: NJW0302GT4TL
Material of Transistor: Si
Polarity: PNP
Maximum Collector Power Dissipation (Pc): 150 W
Maximum Collector-Base Voltage |Vcb|: 250 V
Maximum Collector-Emitter Voltage |Vce|: 250 V
Maximum Emitter-Base Voltage |Veb|: 5 V
Maximum Collector Current |Ic max|: 15 A
Max. Operating Junction Temperature (Tj): 150 °C
Forward Current Transfer Ratio (hFE), MIN: 75
Noise Figure, dB: -
Package: TO3PN
NJW0302GT4TL Transistor Equivalent Substitute - Cross-Reference Search
NJW0302GT4TL Datasheet (PDF)
njw0302gt4tl.pdf
NJW0302GT4TLDESCRIPTIONHigh Collector-Emitter Breakdown Voltage-: V =250V(Min)(BR)CEOGood Linearity of hFEComplement to Type NJW0281GAPPLICATIONSDesigned for high fidelity audio amplifier andother linear applicationsABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV Collector-Base Voltage -250 VCBOV Collector-Emitter Voltage -250 VCEOColl
njw0281g njw0302g.pdf
NJW0281G (NPN)NJW0302G (PNP)Preferred DevicesComplementary NPN-PNPPower Bipolar TransistorsThese complementary devices are lower power versions of thepopular NJW3281G and NJW1302G audio output transistors. Withhttp://onsemi.comsuperior gain linearity and safe operating area performance, thesetransistors are ideal for high fidelity audio amplifier output stages and15 AMPERES
njw0302g.pdf
NJW0302GSilicon PNP transistorPower Amplifier ApplicationsComplementary to NJW0281GHigh collector voltage:VCEO=-230V(min)Recommended for 100-W high-fidelity audio frequency amplifierOutput stageNote: Using continuously under heavy loads (e.g. the applicationof high temperature/current/voltage and the significant changein temperature, etc.) may cause this product to de
njw0302g.pdf
NJW0302GTransistor Silicon PNP Epitaxial TypeNJW0302GPower Amplifier ApplicationsComplementaryto NJW0281GHigh collector voltage:VCEO=-230V (min)Recommendedfor 100-Whigh-fidelity audiofrequency amplifierOutput stageNote: Using continuously under heavy loads (e.g. theapplicationof hightemperature/current/voltageandthe significant changeintemperature, etc.) may causethis produc
njw0302g.pdf
isc Silicon PNP Power Transistor NJW0302GDESCRIPTIONHigh Collector-Emitter Breakdown Voltage-: V = -250V(Min)(BR)CEOGood Linearity of hFEComplement to Type NJW0281GMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for high fidelity audio amplifier andother linear applicationsABSOLUTE MAXIMUM RATINGS(Ta=25
Datasheet: HA9079 , HA9500 , HA9501 , HA9502 , HA9531 , HA9531A , HA9532 , HA9532A , 2222A , HCT2907A , HCT2907M , HDA412 , HDA420 , HDA496 , HEP637 , HEPG0001 , HEPG0002 .
