BC817-16-AU . Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

   Número de Parte: BC817-16-AU
   Código: 8A
   Material: Si
   Polaridad de transistor: NPN

ESPECIFICACIONES MÁXIMAS

   Disipación total del dispositivo (Pc): 0.33 W
   Tensión colector-base (Vcb): 50 V
   Tensión colector-emisor (Vce): 45 V
   Tensión emisor-base (Veb): 5 V
   Corriente del colector DC máxima (Ic): 0.5 A
   Temperatura operativa máxima (Tj): 150 °C

CARACTERÍSTICAS ELÉCTRICAS

   Transición de frecuencia (ft): 100 MHz
   Capacitancia de salida (Cc): 7 pF
   Ganancia de corriente contínua (hfe): 100
   Paquete / Cubierta: SOT23

Búsqueda de reemplazo de transistor bipolar BC817-16-AU

BC817-16-AU Datasheet (PDF)

..1. Size:493K panjit
bc817-16-au bc817-25-au bc817-40-au.pdf

PBC817-16-AU / BC817-25-AU / BC817-40-AU Silicon NPN General Purpose Transistors SOT-23 Unit: inch(mm) 45V 500mA Voltage Current Features Silicon NPN Epitaxial type Excellent DC current gain characteristics General purpose amplifier application AEC-Q101 qualified Lead free in compliance with EU RoHS 2.0 Green molding compound as per IEC 61249 Stan

5.1. Size:107K diodes
bc817-16-25-40.pdf

BC817-16 / -25 / -40NPN SURFACE MOUNT SMALL SIGNAL TRANSISTOR Please click here to visit our online spice models database.Features Mechanical Data Ideally Suited for Automated Insertion Case: SOT-23 Epitaxial Planar Die Construction Case Material: Molded Plastic, Green Molding Compound, Note 4. UL Flammability Classification Rating 94V-0 For Switching, AF

5.2. Size:320K wietron
bc817-16-25-40.pdf

BC817-16/BC817-25BC817-40COLLECTOR3General Purpose Transistor3NPN Silicon11BASE2SOT-232EMITTER( T =25 C unless otherwise noted)M aximum R atings ARating SymbolUnitValueVCEO 45Collector-Emitter Voltage VdcVCBO VdcCollector-Base Voltage50VEBO Vdc5.0Emitter-Base VoltagemAdcCollector Current-Continuous IC500Thermal CharacteristicsChara

5.3. Size:69K comchip
bc817-16-g.pdf

General Purpose TransistorsBC817-16-G/25-G/40-G (NPN)RoHS DeviceFeatures -For general AF applications.SOT-23 -High collector current.0.119(3.00) -High current gain.0.110(2.80) -Low collector-emitter saturation voltage.30.056(1.40)Marking: 0.047(1.20)BC817-16-G: 6A1 20.006(0.15)BC817-25-G: 6B0.083(2.10)0.002(0.05)0.066(1.70)BC817-40-G: 6C0.044(1.10)

5.4. Size:198K wej
bc817-16-25-40.pdf

RoHS BC817- 16/ - 25/ 40BC817- 16/ - 25/ 40NPN EPTTAXIAL SILICON TRANSISTORSURFACE MOUNT SMALLSIGANL TRANSISTORSoABSOLUTE MAXIMUM RATINGS (Ta=25 C)Symbol Rating UnitCharacteristicCollector-Emitter VoltageVCEO 45 VVEmitter-Base Voltage VCBO 50mACollector Current Ic 1000Peak Colteetor Current IcM mA1000Peak Fmitter Current IEM mA800oPDPower Dissipation

Otros transistores... 2N3200 , 2N3201 , 2N3202 , 2N3203 , 2N3204 , 2N3205 , 2N3206 , 2N3207 , B772 , 2N3209 , 2N3209AQF , 2N3209CSM , 2N3209DCSM , 2N3209L , 2N321 , 2N3210 , 2N3211 .

Liste

Recientemente añadidas las descripciónes de los transistores:

BJT: SBT42 | 2SA200-Y | 2SA200-O | 2SD882-Q | 2SD882-P | 2SD882-E | 2SC945-L | 2SC945-H | 2SC4226-R23 | 2SC3357-F | 2SC3357-E | 2SC3356-R26 | 2SC3356-R24 | 2SC3356-R23 | 2SB772-Q | 2SB772-P | 2SB772-E | 2SA1015-L | 2SA1015-H | HSS8550 | HSS8050