BC817-16-AU Datasheet, Equivalent, Cross Reference Search
Type Designator: BC817-16-AU
SMD Transistor Code: 8A
Material of Transistor: Si
Polarity: NPN
Maximum Collector Power Dissipation (Pc): 0.33 W
Maximum Collector-Base Voltage |Vcb|: 50 V
Maximum Collector-Emitter Voltage |Vce|: 45 V
Maximum Emitter-Base Voltage |Veb|: 5 V
Maximum Collector Current |Ic max|: 0.5 A
Max. Operating Junction Temperature (Tj): 150 °C
Transition Frequency (ft): 100 MHz
Collector Capacitance (Cc): 7 pF
Forward Current Transfer Ratio (hFE), MIN: 100
Noise Figure, dB: -
Package: SOT23
BC817-16-AU Transistor Equivalent Substitute - Cross-Reference Search
BC817-16-AU Datasheet (PDF)
bc817-16-au bc817-25-au bc817-40-au.pdf
PBC817-16-AU / BC817-25-AU / BC817-40-AU Silicon NPN General Purpose Transistors SOT-23 Unit: inch(mm) 45V 500mA Voltage Current Features Silicon NPN Epitaxial type Excellent DC current gain characteristics General purpose amplifier application AEC-Q101 qualified Lead free in compliance with EU RoHS 2.0 Green molding compound as per IEC 61249 Stan
bc817-16-25-40.pdf
BC817-16 / -25 / -40NPN SURFACE MOUNT SMALL SIGNAL TRANSISTOR Please click here to visit our online spice models database.Features Mechanical Data Ideally Suited for Automated Insertion Case: SOT-23 Epitaxial Planar Die Construction Case Material: Molded Plastic, Green Molding Compound, Note 4. UL Flammability Classification Rating 94V-0 For Switching, AF
bc817-16-25-40.pdf
BC817-16/BC817-25BC817-40COLLECTOR3General Purpose Transistor3NPN Silicon11BASE2SOT-232EMITTER( T =25 C unless otherwise noted)M aximum R atings ARating SymbolUnitValueVCEO 45Collector-Emitter Voltage VdcVCBO VdcCollector-Base Voltage50VEBO Vdc5.0Emitter-Base VoltagemAdcCollector Current-Continuous IC500Thermal CharacteristicsChara
bc817-16-g.pdf
General Purpose TransistorsBC817-16-G/25-G/40-G (NPN)RoHS DeviceFeatures -For general AF applications.SOT-23 -High collector current.0.119(3.00) -High current gain.0.110(2.80) -Low collector-emitter saturation voltage.30.056(1.40)Marking: 0.047(1.20)BC817-16-G: 6A1 20.006(0.15)BC817-25-G: 6B0.083(2.10)0.002(0.05)0.066(1.70)BC817-40-G: 6C0.044(1.10)
bc817-16-25-40.pdf
RoHS BC817- 16/ - 25/ 40BC817- 16/ - 25/ 40NPN EPTTAXIAL SILICON TRANSISTORSURFACE MOUNT SMALLSIGANL TRANSISTORSoABSOLUTE MAXIMUM RATINGS (Ta=25 C)Symbol Rating UnitCharacteristicCollector-Emitter VoltageVCEO 45 VVEmitter-Base Voltage VCBO 50mACollector Current Ic 1000Peak Colteetor Current IcM mA1000Peak Fmitter Current IEM mA800oPDPower Dissipation
Datasheet: 2N3200 , 2N3201 , 2N3202 , 2N3203 , 2N3204 , 2N3205 , 2N3206 , 2N3207 , B772 , 2N3209 , 2N3209AQF , 2N3209CSM , 2N3209DCSM , 2N3209L , 2N321 , 2N3210 , 2N3211 .
