2SC5084O . Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

   Número de Parte: 2SC5084O
   Código: MCO
   Material: Si
   Polaridad de transistor: NPN

ESPECIFICACIONES MÁXIMAS

   Disipación total del dispositivo (Pc): 0.15 W
   Tensión colector-base (Vcb): 20 V
   Tensión colector-emisor (Vce): 12 V
   Tensión emisor-base (Veb): 3 V
   Corriente del colector DC máxima (Ic): 0.08 A
   Temperatura operativa máxima (Tj): 125 °C

CARACTERÍSTICAS ELÉCTRICAS

   Transición de frecuencia (ft): 5000 MHz
   Capacitancia de salida (Cc): 1 pF
   Ganancia de corriente contínua (hfe): 80
   Paquete / Cubierta: SC59

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2SC5084O Datasheet (PDF)

..1. Size:478K toshiba
2sc5084o 2sc5084y.pdf

2SC5084 TOSHIBA Transistor Silicon NPN Epitaxial Planar Type 2SC5084 VHF~UHF Band Low Noise Amplifier Applications Unit: mm Low noise figure, high gain. NF = 1.1dB, |S21e|2 = 11dB (f = 1 GHz) Absolute Maximum Ratings (Ta = 25C) Characteristics Symbol Rating UnitCollector-base voltage VCBO 20 VCollector-emitter voltage VCEO 12 VEmitter-base voltage VEBO 3 VBase

7.1. Size:474K toshiba
2sc5084.pdf

2SC5084 TOSHIBA Transistor Silicon NPN Epitaxial Planar Type 2SC5084 VHF~UHF Band Low Noise Amplifier Applications Unit: mm Low noise figure, high gain. NF = 1.1dB, |S |2 = 11dB (f = 1 GHz) 21eMaximum Ratings (Ta == 25C) ==Characteristics Symbol Rating UnitCollector-base voltage VCBO 20 VCollector-emitter voltage VCEO 12 VEmitter-base voltage VEBO 3 VB

7.2. Size:1495K kexin
2sc5084.pdf

SMD Type TransistorsNPN Transistors2SC5084SOT-23Unit: mm2.9+0.1-0.1+0.10.4 -0.13 Features Collector Current Capability IC=80mA1 2 Collector Emitter Voltage VCEO=12V+0.1+0.050.95 -0.1 0.1 -0.01+0.11.9 -0.11.Base2.Emitter3.collector Absolute Maximum Ratings Ta = 25Parameter Symbol Rating Unit Collector - Base Voltage VCBO 20 Colle

7.3. Size:186K inchange semiconductor
2sc5084.pdf

INCHANGE Semiconductorisc Silicon NPN RF Transistor 2SC5084DESCRIPTIONHigh Gain Bandwidth Productf = 7 GHz TYP.THigh Gain, Low Noise FigureS 2 = 11 dB TYP., NF = 1.1 dB TYP @ f = 1 GHz21e100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for VHF~UHF band low noise amplifier applicat

Otros transistores... 2N3200 , 2N3201 , 2N3202 , 2N3203 , 2N3204 , 2N3205 , 2N3206 , 2N3207 , B772 , 2N3209 , 2N3209AQF , 2N3209CSM , 2N3209DCSM , 2N3209L , 2N321 , 2N3210 , 2N3211 .

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