2SC5084O Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: 2SC5084O  📄📄 

Código: MCO

Material: Si

Polaridad de transistor: NPN

ESPECIFICACIONES MÁXIMAS

Disipación total del dispositivo (Pc): 0.15 W

Tensión colector-base (Vcb): 20 V

Tensión colector-emisor (Vce): 12 V

Tensión emisor-base (Veb): 3 V

Corriente del colector DC máxima (Ic): 0.08 A

Temperatura operativa máxima (Tj): 125 °C

CARACTERÍSTICAS ELÉCTRICAS

Transición de frecuencia (fT): 5000 MHz

Capacitancia de salida (Cc): 1 pF

Ganancia de corriente contínua (hFE): 80

Encapsulados: SC59

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2SC5084O datasheet

 ..1. Size:478K  toshiba
 2sc5084o 2sc5084y.pdf pdf_icon

2SC5084O

2SC5084 TOSHIBA Transistor Silicon NPN Epitaxial Planar Type 2SC5084 VHF UHF Band Low Noise Amplifier Applications Unit mm Low noise figure, high gain. NF = 1.1dB, S21e 2 = 11dB (f = 1 GHz) Absolute Maximum Ratings (Ta = 25 C) Characteristics Symbol Rating Unit Collector-base voltage VCBO 20 V Collector-emitter voltage VCEO 12 V Emitter-base voltage VEBO 3 V Base

 7.1. Size:474K  toshiba
 2sc5084.pdf pdf_icon

2SC5084O

2SC5084 TOSHIBA Transistor Silicon NPN Epitaxial Planar Type 2SC5084 VHF UHF Band Low Noise Amplifier Applications Unit mm Low noise figure, high gain. NF = 1.1dB, S 2 = 11dB (f = 1 GHz) 21e Maximum Ratings (Ta = = 25 C) = = Characteristics Symbol Rating Unit Collector-base voltage VCBO 20 V Collector-emitter voltage VCEO 12 V Emitter-base voltage VEBO 3 V B

 7.2. Size:1495K  kexin
 2sc5084.pdf pdf_icon

2SC5084O

SMD Type Transistors NPN Transistors 2SC5084 SOT-23 Unit mm 2.9+0.1 -0.1 +0.1 0.4 -0.1 3 Features Collector Current Capability IC=80mA 1 2 Collector Emitter Voltage VCEO=12V +0.1 +0.05 0.95 -0.1 0.1 -0.01 +0.1 1.9 -0.1 1.Base 2.Emitter 3.collector Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Collector - Base Voltage VCBO 20 Colle

 7.3. Size:186K  inchange semiconductor
 2sc5084.pdf pdf_icon

2SC5084O

INCHANGE Semiconductor isc Silicon NPN RF Transistor 2SC5084 DESCRIPTION High Gain Bandwidth Product f = 7 GHz TYP. T High Gain, Low Noise Figure S 2 = 11 dB TYP., NF = 1.1 dB TYP @ f = 1 GHz 21e 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for VHF UHF band low noise amplifier applicat

MOSTRAR MÁS

Otros transistores... 2SC3138-O, 2SC3138-Y, 2SC4117BL, 2SC4117GR, 2SC4213-A, 2SC4213-B, 2SC5066O, 2SC5066Y, D965, 2SC5084Y, 2SC6026MFV-GR, 2SC6026MFV-Y, HN1A01FE-GR, HN1A01FE-Y, HN1B04FE-GR, HN1B04FE-Y, 2N25550