HN1A01FE-Y Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: HN1A01FE-Y
Código: D1Y
Material: Si
Polaridad de transistor: PNP
ESPECIFICACIONES MÁXIMAS
Disipación total del dispositivo (Pc): 0.1 W
Tensión colector-base (Vcb): 50 V
Tensión colector-emisor (Vce): 50 V
Tensión emisor-base (Veb): 5 V
Corriente del colector DC máxima (Ic): 0.15 A
Temperatura operativa máxima (Tj): 150 °C
CARACTERÍSTICAS ELÉCTRICAS
Transición de frecuencia (fT): 80 MHz
Capacitancia de salida (Cc): 4 pF
Ganancia de corriente contínua (hFE): 120
Encapsulados: ES6
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HN1A01FE-Y datasheet
hn1a01fe.pdf
HN1A01FE TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT Process) HN1A01FE Unit mm Audio Frequency General Purpose Amplifier Applications Small package (Dual type) High voltage and high current VCEO = -50V, IC = -150mA (max) High hFE hFE = 120 400 Excellent hFE linearity hFE (IC = -0.1mA) / hFE (IC = -2mA) = 0.95 (typ.) Absolute Maximum Ratings (Ta = 25 C)
hn1a01f.pdf
HN1A01F TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT Process) HN1A01F Unit mm Audio-Frequency General-Purpose Amplifier Applications Small package (dual type) High voltage and high current VCEO = -50 V, IC = -150 mA (max) High hFE hFE = 120 400 Excellent hFE linearity hFE (IC = -0.1 mA) / hFE (IC = -2 mA) = 0.95 (typ.) Absolute Maximum Ratings (Ta = 25
hn1a01fu.pdf
HN1A01FU TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT Process) HN1A01FU Unit mm Audio Frequency General Purpose Amplifier Applications Small package (Dual type) High voltage and high current V =-50V, I =-150mA (max) CEO C High h h = 120 400 FE FE Excellent h linearity FE h (I =-0.1mA) / h (I =-2mA) = 0.95 (typ.) FE C FE C Absolute Maximum Ratings
Otros transistores... 2SC4213-B, 2SC5066O, 2SC5066Y, 2SC5084O, 2SC5084Y, 2SC6026MFV-GR, 2SC6026MFV-Y, HN1A01FE-GR, 2SA1015, HN1B04FE-GR, HN1B04FE-Y, 2N25550, 2N25551, 2SA1015G, 2SA1015O, 2SA1015Y, 2SA733L
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