All Transistors. HN1A01FE-Y Datasheet

 

HN1A01FE-Y Datasheet, Equivalent, Cross Reference Search


   Type Designator: HN1A01FE-Y
   SMD Transistor Code: D1Y
   Material of Transistor: Si
   Polarity: PNP
   Maximum Collector Power Dissipation (Pc): 0.1 W
   Maximum Collector-Base Voltage |Vcb|: 50 V
   Maximum Collector-Emitter Voltage |Vce|: 50 V
   Maximum Emitter-Base Voltage |Veb|: 5 V
   Maximum Collector Current |Ic max|: 0.15 A
   Max. Operating Junction Temperature (Tj): 150 °C
   Transition Frequency (ft): 80 MHz
   Collector Capacitance (Cc): 4 pF
   Forward Current Transfer Ratio (hFE), MIN: 120
   Noise Figure, dB: -
   Package: ES6

 HN1A01FE-Y Transistor Equivalent Substitute - Cross-Reference Search

   

HN1A01FE-Y Datasheet (PDF)

 ..1. Size:204K  toshiba
hn1a01fe-y hn1a01fe-gr.pdf

HN1A01FE-Y
HN1A01FE-Y

HN1A01FE TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT Process) HN1A01FE Unit: mmAudio Frequency General Purpose Amplifier Applications Small package (Dual type) High voltage and high current : VCEO = -50V, IC = -150mA (max) High hFE: hFE = 120 to 400 Excellent hFE linearity : hFE (IC = -0.1mA) / hFE (IC = -2mA) = 0.95 (typ.) Absolute Maximum Ratings (Ta = 25

 6.1. Size:174K  toshiba
hn1a01fe.pdf

HN1A01FE-Y
HN1A01FE-Y

HN1A01FE TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT Process) HN1A01FE Unit: mmAudio Frequency General Purpose Amplifier Applications Small package (Dual type) High voltage and high current : VCEO = -50V, IC = -150mA (max) High hFE: hFE = 120~400 Excellent hFE linearity : hFE (IC = -0.1mA) / hFE (IC = -2mA) = 0.95 (typ.) Absolute Maximum Ratings (Ta = 25C)

 7.1. Size:228K  toshiba
hn1a01f.pdf

HN1A01FE-Y
HN1A01FE-Y

HN1A01F TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT Process) HN1A01F Unit: mmAudio-Frequency General-Purpose Amplifier Applications Small package (dual type) High voltage and high current : VCEO = -50 V, IC = -150 mA (max) High hFE: hFE = 120~400 Excellent hFE linearity : hFE (IC = -0.1 mA) / hFE (IC = -2 mA) = 0.95 (typ.) Absolute Maximum Ratings (Ta = 25

 7.2. Size:242K  toshiba
hn1a01fu.pdf

HN1A01FE-Y
HN1A01FE-Y

HN1A01FU TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT Process) HN1A01FU Unit: mmAudio Frequency General Purpose Amplifier Applications Small package (Dual type) High voltage and high current : V =-50V, I =-150mA (max) CEO C High h : h = 120~400 FE FE Excellent h linearity FE: h (I =-0.1mA) / h (I =-2mA) = 0.95 (typ.) FE C FE CAbsolute Maximum Ratings

 7.3. Size:811K  kexin
hn1a01fu.pdf

HN1A01FE-Y
HN1A01FE-Y

SMD Type Transistors PNP TransistorsHN1A01FU (KN1A01FU ) Features High voltage and high current High hFE: hFE = 120~400 Excellent hFE linearity Small package (Dual type) Absolute Maximum Ratings Ta = 25Parameter Symbol Rating Unit Collector - Base Voltage VCBO -50 Collector - Emitter Voltage VCEO -50 V Emitter - Base Voltage VEBO -5 Collector

Datasheet: BC507FA , BC507FB , BC508 , BC508A , BC508B , BC508C , BC508F , BC508FA , 13007 , BC508FC , BC509 , BC509B , BC509C , BC509F , BC509FB , BC509FC , BC510 .

 

 
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