HN1B04FE-Y Todos los transistores

 

HN1B04FE-Y . Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: HN1B04FE-Y

Código: 1DY

Material: Si

Polaridad de transistor: NPN*PNP

ESPECIFICACIONES MÁXIMAS

Disipación total del dispositivo (Pc): 0.1 W

Tensión colector-base (Vcb): 60 V

Tensión colector-emisor (Vce): 50 V

Tensión emisor-base (Veb): 5 V

Corriente del colector DC máxima (Ic): 0.15 A

Temperatura operativa máxima (Tj): 150 °C

CARACTERÍSTICAS ELÉCTRICAS

Transición de frecuencia (ft): 80 MHz

Capacitancia de salida (Cc): 2 pF

Ganancia de corriente contínua (hfe): 120

Paquete / Cubierta: ES6

Búsqueda de reemplazo de transistor bipolar HN1B04FE-Y

 

HN1B04FE-Y Datasheet (PDF)

 ..1. Size:339K  toshiba
hn1b04fe-y hn1b04fe-gr.pdf

HN1B04FE-Y
HN1B04FE-Y

HN1B04FE TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT Process) Silicon PNP Epitaxial Type (PCT Process) HN1B04FE Unit: mmAudio Frequency General Purpose Amplifier Applications Q1: High voltage and high current : VCEO = 50V, IC = 150mA (max) High hFE : hFE = 120 to 400 Excellent hFE linearity : hFE (IC = 0.1mA) / hFE (IC = 2mA) = 0.95 (typ.) Q2: High voltage

 6.1. Size:313K  toshiba
hn1b04fe.pdf

HN1B04FE-Y
HN1B04FE-Y

HN1B04FE TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT Process) Silicon PNP Epitaxial Type (PCT Process) HN1B04FE Unit: mmAudio Frequency General Purpose Amplifier Applications Q1: High voltage and high current : VCEO = 50V, IC = 150mA (max) High hFE : hFE = 120~400 Excellent hFE linearity : hFE (IC = 0.1mA) / hFE (IC = 2mA) = 0.95 (typ.) Q2: High voltage and

 7.1. Size:390K  toshiba
hn1b04fu.pdf

HN1B04FE-Y
HN1B04FE-Y

HN1B04FU TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT Process) Silicon PNP Epitaxial Type (PCT Process) HN1B04FU Unit: mmAudio Frequency General Purpose Amplifier Applications Q1: High voltage and high current : V = 50V, I = 150mA (max) CEO C High h : h = 120~400 FE FE Excellent h linearity FE: h (I = 0.1mA) / h (I = 2mA) = 0.95 (typ.) FE C FE CQ2:

 7.2. Size:297K  toshiba
hn1b04f.pdf

HN1B04FE-Y
HN1B04FE-Y

HN1B04F TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT Process) Silicon NPN Epitaxial Type (PCT Process) HN1B04F Unit: mmAudio Frequency General Purpose Amplifier Applications Driver Stage Amplifier Applications Switching application Q1: Excellent hFE linearity : hFE(2) = 25 (min) at VCE = -6V, IC = -400mA Q2: Excellent hFE linearity : hFE(2) = 25 (min) at VCE = 6V

Otros transistores... 2SC619 , 2SC62 , 2SC620 , 2SC620M , 2SC621 , 2SC621A , 2SC621M , 2SC622 , 9014 , 2SC623 , 2SC624 , 2SC626 , 2SC627 , 2SC627F , 2SC628 , 2SC629 , 2SC63 .

 

 
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