HN1B04FE-Y Datasheet, Equivalent, Cross Reference Search
Type Designator: HN1B04FE-Y
SMD Transistor Code: 1DY
Material of Transistor: Si
Polarity: NPN*PNP
Maximum Collector Power Dissipation (Pc): 0.1 W
Maximum Collector-Base Voltage |Vcb|: 60 V
Maximum Collector-Emitter Voltage |Vce|: 50 V
Maximum Emitter-Base Voltage |Veb|: 5 V
Maximum Collector Current |Ic max|: 0.15 A
Max. Operating Junction Temperature (Tj): 150 °C
Transition Frequency (ft): 80 MHz
Collector Capacitance (Cc): 2 pF
Forward Current Transfer Ratio (hFE), MIN: 120
Noise Figure, dB: -
Package: ES6
HN1B04FE-Y Transistor Equivalent Substitute - Cross-Reference Search
HN1B04FE-Y Datasheet (PDF)
hn1b04fe-y hn1b04fe-gr.pdf
HN1B04FE TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT Process) Silicon PNP Epitaxial Type (PCT Process) HN1B04FE Unit: mmAudio Frequency General Purpose Amplifier Applications Q1: High voltage and high current : VCEO = 50V, IC = 150mA (max) High hFE : hFE = 120 to 400 Excellent hFE linearity : hFE (IC = 0.1mA) / hFE (IC = 2mA) = 0.95 (typ.) Q2: High voltage
hn1b04fe.pdf
HN1B04FE TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT Process) Silicon PNP Epitaxial Type (PCT Process) HN1B04FE Unit: mmAudio Frequency General Purpose Amplifier Applications Q1: High voltage and high current : VCEO = 50V, IC = 150mA (max) High hFE : hFE = 120~400 Excellent hFE linearity : hFE (IC = 0.1mA) / hFE (IC = 2mA) = 0.95 (typ.) Q2: High voltage and
hn1b04f.pdf
HN1B04F TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT Process) Silicon NPN Epitaxial Type (PCT Process) HN1B04F Unit: mmAudio Frequency General Purpose Amplifier Applications Driver Stage Amplifier Applications Switching application Q1: Excellent hFE linearity : hFE(2) = 25 (min) at VCE = -6V, IC = -400mA Q2: Excellent hFE linearity : hFE(2) = 25 (min) at VCE = 6V
hn1b04fu.pdf
HN1B04FU TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT Process) Silicon PNP Epitaxial Type (PCT Process) HN1B04FU Unit: mmAudio Frequency General Purpose Amplifier Applications Q1: High voltage and high current : V = 50V, I = 150mA (max) CEO C High h : h = 120~400 FE FE Excellent h linearity FE: h (I = 0.1mA) / h (I = 2mA) = 0.95 (typ.) FE C FE CQ2:
Datasheet: 2SA1801 , 2SA1802 , 2SA1802A , 2SA1803 , 2SA1803O , 2SA1803R , 2SA1804 , 2SA1804O , TIP31C , 2SA1805 , 2SA1805O , 2SA1805R , 2SA1806 , 2SA181 , 2SA1810 , 2SA1810B , 2SA1810C .
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