MRF0211LT1 Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: MRF0211LT1

Código: 15

Material: Si

Polaridad de transistor: NPN

ESPECIFICACIONES MÁXIMAS

Disipación total del dispositivo (Pc): 0.58 W

Tensión colector-base (Vcb): 30 V

Tensión colector-emisor (Vce): 15 V

Tensión emisor-base (Veb): 2.5 V

Corriente del colector DC máxima (Ic): 0.07 A

Temperatura operativa máxima (Tj): 150 °C

CARACTERÍSTICAS ELÉCTRICAS

Transición de frecuencia (fT): 5500 MHz

Capacitancia de salida (Cc): 0.7 pF

Ganancia de corriente contínua (hFE): 50

Encapsulados: SOT143

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MRF0211LT1 datasheet

 ..1. Size:99K  motorola
 mrf0211lt1.pdf pdf_icon

MRF0211LT1

MOTOROLA Order this document SEMICONDUCTOR TECHNICAL DATA by MRF0211LT1/D The RF Line NPN Silicon MRF0211LT1 High-Frequency Transistor . . . designed primarily for use in the high gain, low noise small signal amplifiers for operation up to 3.5 GHz. Also usable in applications requiring fast switching times. High Current Gain Bandwidth Product SURFACE MOUNT fT = 5.

 6.1. Size:99K  motorola
 mrf0211l.pdf pdf_icon

MRF0211LT1

MOTOROLA Order this document SEMICONDUCTOR TECHNICAL DATA by MRF0211LT1/D The RF Line NPN Silicon MRF0211LT1 High-Frequency Transistor . . . designed primarily for use in the high gain, low noise small signal amplifiers for operation up to 3.5 GHz. Also usable in applications requiring fast switching times. High Current Gain Bandwidth Product SURFACE MOUNT fT = 5.

Otros transistores... MMBTSC945P, MMBTSC945R, MMBTSC945Y, ST2SD1664U-P, ST2SD1664U-Q, ST2SD1664U-R, MRF534, MRF536, S9013, MRF1000MA, MRF10070, MRF1029, MRF1030, MRF1031, MRF1032, MRF1035MA, MRF1035MB