MRF0211LT1 Specs and Replacement

Type Designator: MRF0211LT1

SMD Transistor Code: 15

Material of Transistor: Si

Polarity: NPN

Absolute Maximum Ratings

Maximum Collector Power Dissipation (Pc): 0.58 W

Maximum Collector-Base Voltage |Vcb|: 30 V

Maximum Collector-Emitter Voltage |Vce|: 15 V

Maximum Emitter-Base Voltage |Veb|: 2.5 V

Maximum Collector Current |Ic max|: 0.07 A

Max. Operating Junction Temperature (Tj): 150 °C

Electrical Characteristics

Transition Frequency (ft): 5500 MHz

Collector Capacitance (Cc): 0.7 pF

Forward Current Transfer Ratio (hFE), MIN: 50

Noise Figure, dB: -

Package: SOT143

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MRF0211LT1 datasheet

 ..1. Size:99K  motorola

 mrf0211lt1.pdf pdf_icon

MRF0211LT1

MOTOROLA Order this document SEMICONDUCTOR TECHNICAL DATA by MRF0211LT1/D The RF Line NPN Silicon MRF0211LT1 High-Frequency Transistor . . . designed primarily for use in the high gain, low noise small signal amplifiers for operation up to 3.5 GHz. Also usable in applications requiring fast switching times. High Current Gain Bandwidth Product SURFACE MOUNT fT = 5.... See More ⇒

 6.1. Size:99K  motorola

 mrf0211l.pdf pdf_icon

MRF0211LT1

MOTOROLA Order this document SEMICONDUCTOR TECHNICAL DATA by MRF0211LT1/D The RF Line NPN Silicon MRF0211LT1 High-Frequency Transistor . . . designed primarily for use in the high gain, low noise small signal amplifiers for operation up to 3.5 GHz. Also usable in applications requiring fast switching times. High Current Gain Bandwidth Product SURFACE MOUNT fT = 5.... See More ⇒

Detailed specifications: MMBTSC945P, MMBTSC945R, MMBTSC945Y, ST2SD1664U-P, ST2SD1664U-Q, ST2SD1664U-R, MRF534, MRF536, S9013, MRF1000MA, MRF10070, MRF1029, MRF1030, MRF1031, MRF1032, MRF1035MA, MRF1035MB

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