MRF0211LT1 Datasheet, Equivalent, Cross Reference Search
Type Designator: MRF0211LT1
SMD Transistor Code: 15
Material of Transistor: Si
Polarity: NPN
Maximum Collector Power Dissipation (Pc): 0.58 W
Maximum Collector-Base Voltage |Vcb|: 30 V
Maximum Collector-Emitter Voltage |Vce|: 15 V
Maximum Emitter-Base Voltage |Veb|: 2.5 V
Maximum Collector Current |Ic max|: 0.07 A
Max. Operating Junction Temperature (Tj): 150 °C
Transition Frequency (ft): 5500 MHz
Collector Capacitance (Cc): 0.7 pF
Forward Current Transfer Ratio (hFE), MIN: 50
Noise Figure, dB: -
Package: SOT143
MRF0211LT1 Transistor Equivalent Substitute - Cross-Reference Search
MRF0211LT1 Datasheet (PDF)
mrf0211lt1.pdf
MOTOROLAOrder this documentSEMICONDUCTOR TECHNICAL DATAby MRF0211LT1/DThe RF LineNPN SiliconMRF0211LT1High-Frequency Transistor. . . designed primarily for use in the highgain, lownoise smallsignalamplifiers for operation up to 3.5 GHz. Also usable in applications requiring fastswitching times. High CurrentGainBandwidth Product SURFACE MOUNTfT = 5.
mrf0211l.pdf
MOTOROLAOrder this documentSEMICONDUCTOR TECHNICAL DATAby MRF0211LT1/DThe RF LineNPN SiliconMRF0211LT1High-Frequency Transistor. . . designed primarily for use in the highgain, lownoise smallsignalamplifiers for operation up to 3.5 GHz. Also usable in applications requiring fastswitching times. High CurrentGainBandwidth Product SURFACE MOUNTfT = 5.
Datasheet: 2SA1771 , 2SA178 , 2SA1790 , 2SA1791 , 2SA1792 , 2SA1793 , 2SA1794 , 2SA1795 , 13009 , 2SA1799 , 2SA17H , 2SA18 , 2SA180 , 2SA1800 , 2SA1800O , 2SA1800R , 2SA1800Y .