MRF0211LT1 Datasheet and Replacement
Type Designator: MRF0211LT1
SMD Transistor Code: 15
Material of Transistor: Si
Polarity: NPN
Maximum Collector Power Dissipation (Pc): 0.58 W
Maximum Collector-Base Voltage |Vcb|: 30 V
Maximum Collector-Emitter Voltage |Vce|: 15 V
Maximum Emitter-Base Voltage |Veb|: 2.5 V
Maximum Collector Current |Ic max|: 0.07 A
Max. Operating Junction Temperature (Tj): 150 °C
Transition Frequency (ft): 5500 MHz
Collector Capacitance (Cc): 0.7 pF
Forward Current Transfer Ratio (hFE), MIN: 50
Noise Figure, dB: -
Package: SOT143
MRF0211LT1 Substitution
MRF0211LT1 Datasheet (PDF)
mrf0211lt1.pdf

MOTOROLAOrder this documentSEMICONDUCTOR TECHNICAL DATAby MRF0211LT1/DThe RF LineNPN SiliconMRF0211LT1High-Frequency Transistor. . . designed primarily for use in the highgain, lownoise smallsignalamplifiers for operation up to 3.5 GHz. Also usable in applications requiring fastswitching times. High CurrentGainBandwidth Product SURFACE MOUNTfT = 5.
mrf0211l.pdf

MOTOROLAOrder this documentSEMICONDUCTOR TECHNICAL DATAby MRF0211LT1/DThe RF LineNPN SiliconMRF0211LT1High-Frequency Transistor. . . designed primarily for use in the highgain, lownoise smallsignalamplifiers for operation up to 3.5 GHz. Also usable in applications requiring fastswitching times. High CurrentGainBandwidth Product SURFACE MOUNTfT = 5.
Datasheet: MMBTSC945P , MMBTSC945R , MMBTSC945Y , ST2SD1664U-P , ST2SD1664U-Q , ST2SD1664U-R , MRF534 , MRF536 , 2SB817 , MRF1000MA , MRF10070 , MRF1029 , MRF1030 , MRF1031 , MRF1032 , MRF1035MA , MRF1035MB .
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