MRF1000MA Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: MRF1000MA

Material: Si

Polaridad de transistor: NPN

ESPECIFICACIONES MÁXIMAS

Disipación total del dispositivo (Pc): 7 W

Tensión colector-base (Vcb): 50 V

Tensión colector-emisor (Vce): 20 V

Tensión emisor-base (Veb): 3.5 V

Corriente del colector DC máxima (Ic): 0.2 A

Temperatura operativa máxima (Tj): 150 °C

CARACTERÍSTICAS ELÉCTRICAS

Transición de frecuencia (fT): 1100 MHz

Capacitancia de salida (Cc): 2 pF

Ganancia de corriente contínua (hFE): 10

Encapsulados: CASE332-04

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MRF1000MA datasheet

 ..1. Size:108K  motorola
 mrf1000ma mrf1000mb.pdf pdf_icon

MRF1000MA

MOTOROLA Order this document SEMICONDUCTOR TECHNICAL DATA by MRF1000MA/D The RF Line Microwave Pulse MRF1000MA Power Transistors MRF1000MB . . . designed for Class A and AB common emitter amplifier applications in the low power stages of IFF, DME, TACAN, radar transmitters, and CW systems. Guaranteed Performance @ 1090 MHz, 18 Vdc Class A Output Power = 0.2 Watt 0.7 W, 96

 6.1. Size:108K  motorola
 mrf1000m.pdf pdf_icon

MRF1000MA

MOTOROLA Order this document SEMICONDUCTOR TECHNICAL DATA by MRF1000MA/D The RF Line Microwave Pulse MRF1000MA Power Transistors MRF1000MB . . . designed for Class A and AB common emitter amplifier applications in the low power stages of IFF, DME, TACAN, radar transmitters, and CW systems. Guaranteed Performance @ 1090 MHz, 18 Vdc Class A Output Power = 0.2 Watt 0.7 W, 96

 6.2. Size:164K  macom
 mrf1000mb.pdf pdf_icon

MRF1000MA

MRF1000MB Class A, Class AB Microwave Power Silicon NPN Transistor M/A-COM Products Released - Rev. 053007 0.7 W, 960 1215 MHz, 18V Features Product Image Guaranteed performance @ 1090 MHz, 18 Vdc Class A Output power 0.2W Minimum gain 10dB 100% tested for load mismatch at all phase angles with 10 1 VSWR Industry standard package Nitride

 7.1. Size:100K  motorola
 mrf10005.pdf pdf_icon

MRF1000MA

MOTOROLA Order this document SEMICONDUCTOR TECHNICAL DATA by MRF10005/D The RF Line Microwave Power Transistor MRF10005 . . . designed for CW and long pulsed common base amplifier applications, such as JTIDS and Mode S, in the 0.96 to 1.215 GHz frequency range at high overall duty cycles. Guaranteed Performance @ 1.215 GHz, 28 Vdc Output Power = 5.0 Watts CW Minimum Gain = 8.5 d

MOSTRAR MÁS

Otros transistores... MMBTSC945R, MMBTSC945Y, ST2SD1664U-P, ST2SD1664U-Q, ST2SD1664U-R, MRF534, MRF536, MRF0211LT1, 2SC2655, MRF10070, MRF1029, MRF1030, MRF1031, MRF1032, MRF1035MA, MRF1035MB, MRF10500