MRF1000MA . Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: MRF1000MA
Material: Si
Polaridad de transistor: NPN
ESPECIFICACIONES MÁXIMAS
Disipación total del dispositivo (Pc): 7 W
Tensión colector-base (Vcb): 50 V
Tensión colector-emisor (Vce): 20 V
Tensión emisor-base (Veb): 3.5 V
Corriente del colector DC máxima (Ic): 0.2 A
Temperatura operativa máxima (Tj): 150 °C
CARACTERÍSTICAS ELÉCTRICAS
Transición de frecuencia (ft): 1100 MHz
Capacitancia de salida (Cc): 2 pF
Ganancia de corriente contínua (hfe): 10
Paquete / Cubierta: CASE332-04
Búsqueda de reemplazo de transistor bipolar MRF1000MA
MRF1000MA Datasheet (PDF)
mrf1000ma mrf1000mb.pdf
MOTOROLAOrder this documentSEMICONDUCTOR TECHNICAL DATAby MRF1000MA/DThe RF LineMicrowave PulseMRF1000MAPower TransistorsMRF1000MB. . . designed for Class A and AB common emitter amplifier applications in thelowpower stages of IFF, DME, TACAN, radar transmitters, and CW systems. Guaranteed Performance @ 1090 MHz, 18 Vdc Class AOutput Power = 0.2 Watt0.7 W, 96
mrf1000m.pdf
MOTOROLAOrder this documentSEMICONDUCTOR TECHNICAL DATAby MRF1000MA/DThe RF LineMicrowave PulseMRF1000MAPower TransistorsMRF1000MB. . . designed for Class A and AB common emitter amplifier applications in thelowpower stages of IFF, DME, TACAN, radar transmitters, and CW systems. Guaranteed Performance @ 1090 MHz, 18 Vdc Class AOutput Power = 0.2 Watt0.7 W, 96
mrf1000mb.pdf
MRF1000MB Class A, Class AB Microwave Power Silicon NPN Transistor M/A-COM Products Released - Rev. 053007 0.7 W, 9601215 MHz, 18V Features Product Image Guaranteed performance @ 1090 MHz, 18 Vdc Class A Output power: 0.2W Minimum gain: 10dB 100% tested for load mismatch at all phase angles with 10:1 VSWR Industry standard package Nitride
mrf10005.pdf
MOTOROLAOrder this documentSEMICONDUCTOR TECHNICAL DATAby MRF10005/DThe RF LineMicrowave Power TransistorMRF10005. . . designed for CW and long pulsed common base amplifier applications,such as JTIDS and Mode S, in the 0.96 to 1.215 GHz frequency range at highoverall duty cycles. Guaranteed Performance @ 1.215 GHz, 28 VdcOutput Power = 5.0 Watts CWMinimum Gain = 8.5 d
mrf10005.pdf
MRF10005 Microwave Power Silicon Bipolar Transistor M/A-COM Products Released - Rev. 053007 5.0 W, 9601215 MHz, 28V Features Product Image Guaranteed performance @1.215GHz, 28Vdc Output power: 5.0W CW Minimum gain = 8.5dB, 10.3dB (Typ.) RF performance curves for 28 Vdc and 36 Vdc opera-tion 100% tested for load mismatch at all phase angles with 10:
Otros transistores... 2N3200 , 2N3201 , 2N3202 , 2N3203 , 2N3204 , 2N3205 , 2N3206 , 2N3207 , B772 , 2N3209 , 2N3209AQF , 2N3209CSM , 2N3209DCSM , 2N3209L , 2N321 , 2N3210 , 2N3211 .
History: TIP29F
History: TIP29F
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