MRF1000MA
Datasheet, Equivalent, Cross Reference Search
Type Designator: MRF1000MA
Material of Transistor: Si
Polarity: NPN
Maximum Collector Power Dissipation (Pc): 7
W
Maximum Collector-Base Voltage |Vcb|: 50
V
Maximum Collector-Emitter Voltage |Vce|: 20
V
Maximum Emitter-Base Voltage |Veb|: 3.5
V
Maximum Collector Current |Ic max|: 0.2
A
Max. Operating Junction Temperature (Tj): 150
°C
Transition Frequency (ft): 1100
MHz
Collector Capacitance (Cc): 2
pF
Forward Current Transfer Ratio (hFE), MIN: 10
Noise Figure, dB: -
Package: CASE332-04
MRF1000MA
Transistor Equivalent Substitute - Cross-Reference Search
MRF1000MA
Datasheet (PDF)
..1. Size:108K motorola
mrf1000ma mrf1000mb.pdf
MOTOROLAOrder this documentSEMICONDUCTOR TECHNICAL DATAby MRF1000MA/DThe RF LineMicrowave PulseMRF1000MAPower TransistorsMRF1000MB. . . designed for Class A and AB common emitter amplifier applications in thelowpower stages of IFF, DME, TACAN, radar transmitters, and CW systems. Guaranteed Performance @ 1090 MHz, 18 Vdc Class AOutput Power = 0.2 Watt0.7 W, 96
6.1. Size:108K motorola
mrf1000m.pdf
MOTOROLAOrder this documentSEMICONDUCTOR TECHNICAL DATAby MRF1000MA/DThe RF LineMicrowave PulseMRF1000MAPower TransistorsMRF1000MB. . . designed for Class A and AB common emitter amplifier applications in thelowpower stages of IFF, DME, TACAN, radar transmitters, and CW systems. Guaranteed Performance @ 1090 MHz, 18 Vdc Class AOutput Power = 0.2 Watt0.7 W, 96
6.2. Size:164K macom
mrf1000mb.pdf
MRF1000MB Class A, Class AB Microwave Power Silicon NPN Transistor M/A-COM Products Released - Rev. 053007 0.7 W, 9601215 MHz, 18V Features Product Image Guaranteed performance @ 1090 MHz, 18 Vdc Class A Output power: 0.2W Minimum gain: 10dB 100% tested for load mismatch at all phase angles with 10:1 VSWR Industry standard package Nitride
7.1. Size:100K motorola
mrf10005.pdf
MOTOROLAOrder this documentSEMICONDUCTOR TECHNICAL DATAby MRF10005/DThe RF LineMicrowave Power TransistorMRF10005. . . designed for CW and long pulsed common base amplifier applications,such as JTIDS and Mode S, in the 0.96 to 1.215 GHz frequency range at highoverall duty cycles. Guaranteed Performance @ 1.215 GHz, 28 VdcOutput Power = 5.0 Watts CWMinimum Gain = 8.5 d
7.2. Size:193K macom
mrf10005.pdf
MRF10005 Microwave Power Silicon Bipolar Transistor M/A-COM Products Released - Rev. 053007 5.0 W, 9601215 MHz, 28V Features Product Image Guaranteed performance @1.215GHz, 28Vdc Output power: 5.0W CW Minimum gain = 8.5dB, 10.3dB (Typ.) RF performance curves for 28 Vdc and 36 Vdc opera-tion 100% tested for load mismatch at all phase angles with 10:
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