MRF1000MA Specs and Replacement

Type Designator: MRF1000MA

Material of Transistor: Si

Polarity: NPN

Absolute Maximum Ratings

Maximum Collector Power Dissipation (Pc): 7 W

Maximum Collector-Base Voltage |Vcb|: 50 V

Maximum Collector-Emitter Voltage |Vce|: 20 V

Maximum Emitter-Base Voltage |Veb|: 3.5 V

Maximum Collector Current |Ic max|: 0.2 A

Max. Operating Junction Temperature (Tj): 150 °C

Electrical Characteristics

Transition Frequency (ft): 1100 MHz

Collector Capacitance (Cc): 2 pF

Forward Current Transfer Ratio (hFE), MIN: 10

Noise Figure, dB: -

Package: CASE332-04

 MRF1000MA Substitution

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MRF1000MA datasheet

 ..1. Size:108K  motorola

 mrf1000ma mrf1000mb.pdf pdf_icon

MRF1000MA

MOTOROLA Order this document SEMICONDUCTOR TECHNICAL DATA by MRF1000MA/D The RF Line Microwave Pulse MRF1000MA Power Transistors MRF1000MB . . . designed for Class A and AB common emitter amplifier applications in the low power stages of IFF, DME, TACAN, radar transmitters, and CW systems. Guaranteed Performance @ 1090 MHz, 18 Vdc Class A Output Power = 0.2 Watt 0.7 W, 96... See More ⇒

 6.1. Size:108K  motorola

 mrf1000m.pdf pdf_icon

MRF1000MA

MOTOROLA Order this document SEMICONDUCTOR TECHNICAL DATA by MRF1000MA/D The RF Line Microwave Pulse MRF1000MA Power Transistors MRF1000MB . . . designed for Class A and AB common emitter amplifier applications in the low power stages of IFF, DME, TACAN, radar transmitters, and CW systems. Guaranteed Performance @ 1090 MHz, 18 Vdc Class A Output Power = 0.2 Watt 0.7 W, 96... See More ⇒

 6.2. Size:164K  macom

 mrf1000mb.pdf pdf_icon

MRF1000MA

MRF1000MB Class A, Class AB Microwave Power Silicon NPN Transistor M/A-COM Products Released - Rev. 053007 0.7 W, 960 1215 MHz, 18V Features Product Image Guaranteed performance @ 1090 MHz, 18 Vdc Class A Output power 0.2W Minimum gain 10dB 100% tested for load mismatch at all phase angles with 10 1 VSWR Industry standard package Nitride... See More ⇒

 7.1. Size:100K  motorola

 mrf10005.pdf pdf_icon

MRF1000MA

MOTOROLA Order this document SEMICONDUCTOR TECHNICAL DATA by MRF10005/D The RF Line Microwave Power Transistor MRF10005 . . . designed for CW and long pulsed common base amplifier applications, such as JTIDS and Mode S, in the 0.96 to 1.215 GHz frequency range at high overall duty cycles. Guaranteed Performance @ 1.215 GHz, 28 Vdc Output Power = 5.0 Watts CW Minimum Gain = 8.5 d... See More ⇒

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Detailed specifications: MMBTSC945R, MMBTSC945Y, ST2SD1664U-P, ST2SD1664U-Q, ST2SD1664U-R, MRF534, MRF536, MRF0211LT1, 2SC2655, MRF10070, MRF1029, MRF1030, MRF1031, MRF1032, MRF1035MA, MRF1035MB, MRF10500

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