MRF1032 . Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: MRF1032
Material: Si
Polaridad de transistor: NPN
ESPECIFICACIONES MÁXIMAS
Disipación total del dispositivo (Pc): 50 W
Tensión colector-base (Vcb): 60 V
Tensión colector-emisor (Vce): 30 V
Tensión emisor-base (Veb): 4 V
Corriente del colector DC máxima (Ic): 0.85 A
Temperatura operativa máxima (Tj): 200 °C
CARACTERÍSTICAS ELÉCTRICAS
Transición de frecuencia (ft): 1000 MHz
Capacitancia de salida (Cc): 19.5(max) pF
Ganancia de corriente contínua (hfe): 20
Paquete / Cubierta: CASE244-04
Búsqueda de reemplazo de transistor bipolar MRF1032
MRF1032 Datasheet (PDF)
mrf1032.pdf
MOTOROLAOrder this documentSEMICONDUCTOR TECHNICAL DATAby MRF1032/DThe RF LineUHF Power TransistorMRF1032. . . designed primarily for largesignal output and driver amplifier stages to1.0 GHz. Designed for Class A Linear Power Amplifiers Specified 25 Volt, 900 MHz Characteristics:Output Power 6.0 WattsPower Gain 6.5 dB Min, Class AB6.0 W, TO 1.0 GHzLI
mrf1032r.pdf
MOTOROLAOrder this documentSEMICONDUCTOR TECHNICAL DATAby MRF1032/DThe RF LineUHF Power TransistorMRF1032. . . designed primarily for largesignal output and driver amplifier stages to1.0 GHz. Designed for Class A Linear Power Amplifiers Specified 25 Volt, 900 MHz Characteristics:Output Power 6.0 WattsPower Gain 6.5 dB Min, Class AB6.0 W, TO 1.0 GHzLI
mrf1035mbrev0.pdf
MOTOROLAOrder this documentSEMICONDUCTOR TECHNICAL DATAby MRF1035MB/DThe RF LineMicrowave PulseMRF1035MBPower TransistorsDesigned for Class B and C common base amplifier applications in short andlong pulse TACAN, IFF, DME, and radar transmitters. Guaranteed Performance @ 1090 MHz, 50 VdcOutput Power = 35 Watts Peak35 W (PEAK), 9601215 MHzMinimum Gain = 10 dBMIC
mrf1030r.pdf
MOTOROLAOrder this documentSEMICONDUCTOR TECHNICAL DATAby MRF1030/DThe RF LineUHF Power TransistorMRF1030. . . designed primarily for wideband, largesignal output and driver amplifierstages to 1.0 GHz. Designed for Class A Linear Power Amplifiers Specified 25 Volt, 900 MHz Characteristics:Output Power 3.0 WattsPower Gain 7.5 dB Min, Class AB3.0 W, TO 1
mrf1035m.pdf
MOTOROLAOrder this documentSEMICONDUCTOR TECHNICAL DATAby MRF1035MA/DThe RF LineMicrowave PulseMRF1035MAPower TransistorsMRF1035MB. . . designed for Class B and C common base amplifier applications in shortand long pulse TACAN, IFF, DME, and radar transmitters. Guaranteed Performance @ 1090 MHz, 50 VdcOutput Power = 35 Watts Peak35 W (PEAK), 9601215 MHzMinimum
mrf1031r.pdf
MOTOROLAOrder this documentSEMICONDUCTOR TECHNICAL DATAby MRF1031/DThe RF LineUHF Power TransistorMRF1031. . . designed primarily for wideband, largesignal output and driver amplifierstages to 1.0 GHz. Designed for Class A Linear Power Amplifiers Specified 25 Volt, 900 MHz Characteristics:Output Power 4.5 WattsPower Gain 7.0 dB Min, Class AB4.5 W, TO 1
mrf1035mb.pdf
MOTOROLAOrder this documentSEMICONDUCTOR TECHNICAL DATAby MRF1035MB/DThe RF LineMicrowave PulseMRF1035MBPower TransistorsDesigned for Class B and C common base amplifier applications in short andlong pulse TACAN, IFF, DME, and radar transmitters. Guaranteed Performance @ 1090 MHz, 50 VdcOutput Power = 35 Watts Peak35 W (PEAK), 9601215 MHzMinimum Gain = 10 dBMIC
mrf1031.pdf
MOTOROLAOrder this documentSEMICONDUCTOR TECHNICAL DATAby MRF1031/DThe RF LineUHF Power TransistorMRF1031. . . designed primarily for wideband, largesignal output and driver amplifierstages to 1.0 GHz. Designed for Class A Linear Power Amplifiers Specified 25 Volt, 900 MHz Characteristics:Output Power 4.5 WattsPower Gain 7.0 dB Min, Class AB4.5 W, TO 1
mrf10350.pdf
MOTOROLAOrder this documentSEMICONDUCTOR TECHNICAL DATAby MRF10350/DThe RF LineMicrowave PulseMRF10350Power TransistorDesigned for 10251150 MHz pulse common base amplifier applicationssuch as TCAS, TACAN and ModeS transmitters. Guaranteed Performance @ 1090 MHzOutput Power = 350 Watts Peak350 W (PEAK)Gain = 8.5 dB Min, 9.0 dB (Typ)10251150 MHzMICROWAVE
mrf1030.pdf
MOTOROLAOrder this documentSEMICONDUCTOR TECHNICAL DATAby MRF1030/DThe RF LineUHF Power TransistorMRF1030. . . designed primarily for wideband, largesignal output and driver amplifierstages to 1.0 GHz. Designed for Class A Linear Power Amplifiers Specified 25 Volt, 900 MHz Characteristics:Output Power 3.0 WattsPower Gain 7.5 dB Min, Class AB3.0 W, TO 1
mrf1035ma mrf1035mb.pdf
MOTOROLAOrder this documentSEMICONDUCTOR TECHNICAL DATAby MRF1035MA/DThe RF LineMicrowave PulseMRF1035MAPower TransistorsMRF1035MB. . . designed for Class B and C common base amplifier applications in shortand long pulse TACAN, IFF, DME, and radar transmitters. Guaranteed Performance @ 1090 MHz, 50 VdcOutput Power = 35 Watts Peak35 W (PEAK), 9601215 MHzMinimum
mrf10350.pdf
MRF10350 Microwave Pulse Power Silicon NPN Transistor M/A-COM Products Released - Rev. 07.07 350W (peak), 10251150MHz Product Image Designed for 10251150 MHz pulse common base amplifier applications such as TCAS, TACAN and ModeS transmitters. Guaranteed performance @ 1090 MHz Output power = 350 W Peak Gain = 8.5 dB min, 9.0 dB (typ.) 100% tested for load
Otros transistores... 2N3192 , 2N3193 , 2N3194 , 2N3195 , 2N3196 , 2N3197 , 2N3198 , 2N3199 , 2SA1837 , 2N320 , 2N3200 , 2N3201 , 2N3202 , 2N3203 , 2N3204 , 2N3205 , 2N3206 .
History: MRF477 | 2N4955-78
Liste
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