MRF1032 Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: MRF1032

Material: Si

Polaridad de transistor: NPN

ESPECIFICACIONES MÁXIMAS

Disipación total del dispositivo (Pc): 50 W

Tensión colector-base (Vcb): 60 V

Tensión colector-emisor (Vce): 30 V

Tensión emisor-base (Veb): 4 V

Corriente del colector DC máxima (Ic): 0.85 A

Temperatura operativa máxima (Tj): 200 °C

CARACTERÍSTICAS ELÉCTRICAS

Transición de frecuencia (fT): 1000 MHz

Capacitancia de salida (Cc): 19.5 max pF

Ganancia de corriente contínua (hFE): 20

Encapsulados: CASE244-04

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MRF1032 datasheet

 ..1. Size:55K  motorola
 mrf1032.pdf pdf_icon

MRF1032

MOTOROLA Order this document SEMICONDUCTOR TECHNICAL DATA by MRF1032/D The RF Line UHF Power Transistor MRF1032 . . . designed primarily for large signal output and driver amplifier stages to 1.0 GHz. Designed for Class A Linear Power Amplifiers Specified 25 Volt, 900 MHz Characteristics Output Power 6.0 Watts Power Gain 6.5 dB Min, Class AB 6.0 W, TO 1.0 GHz LI

 0.1. Size:55K  motorola
 mrf1032r.pdf pdf_icon

MRF1032

MOTOROLA Order this document SEMICONDUCTOR TECHNICAL DATA by MRF1032/D The RF Line UHF Power Transistor MRF1032 . . . designed primarily for large signal output and driver amplifier stages to 1.0 GHz. Designed for Class A Linear Power Amplifiers Specified 25 Volt, 900 MHz Characteristics Output Power 6.0 Watts Power Gain 6.5 dB Min, Class AB 6.0 W, TO 1.0 GHz LI

 8.1. Size:100K  motorola
 mrf1035mbrev0.pdf pdf_icon

MRF1032

MOTOROLA Order this document SEMICONDUCTOR TECHNICAL DATA by MRF1035MB/D The RF Line Microwave Pulse MRF1035MB Power Transistors Designed for Class B and C common base amplifier applications in short and long pulse TACAN, IFF, DME, and radar transmitters. Guaranteed Performance @ 1090 MHz, 50 Vdc Output Power = 35 Watts Peak 35 W (PEAK), 960 1215 MHz Minimum Gain = 10 dB MIC

 8.2. Size:54K  motorola
 mrf1030r.pdf pdf_icon

MRF1032

MOTOROLA Order this document SEMICONDUCTOR TECHNICAL DATA by MRF1030/D The RF Line UHF Power Transistor MRF1030 . . . designed primarily for wideband, large signal output and driver amplifier stages to 1.0 GHz. Designed for Class A Linear Power Amplifiers Specified 25 Volt, 900 MHz Characteristics Output Power 3.0 Watts Power Gain 7.5 dB Min, Class AB 3.0 W, TO 1

MOSTRAR MÁS

Otros transistores... MRF534, MRF536, MRF0211LT1, MRF1000MA, MRF10070, MRF1029, MRF1030, MRF1031, 2222A, MRF1035MA, MRF1035MB, MRF10500, MRF10501, MRF1375, MRF1500, MRF15030, MRF15060