MRF1032 Todos los transistores

 

MRF1032 . Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: MRF1032
   Material: Si
   Polaridad de transistor: NPN

ESPECIFICACIONES MÁXIMAS


   Disipación total del dispositivo (Pc): 50 W
   Tensión colector-base (Vcb): 60 V
   Tensión colector-emisor (Vce): 30 V
   Tensión emisor-base (Veb): 4 V
   Corriente del colector DC máxima (Ic): 0.85 A
   Temperatura operativa máxima (Tj): 200 °C

CARACTERÍSTICAS ELÉCTRICAS


   Transición de frecuencia (ft): 1000 MHz
   Capacitancia de salida (Cc): 19.5(max) pF
   Ganancia de corriente contínua (hfe): 20
   Paquete / Cubierta: CASE244-04
 

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MRF1032 Datasheet (PDF)

 ..1. Size:55K  motorola
 mrf1032.pdf pdf_icon

MRF1032

MOTOROLAOrder this documentSEMICONDUCTOR TECHNICAL DATAby MRF1032/DThe RF LineUHF Power TransistorMRF1032. . . designed primarily for largesignal output and driver amplifier stages to1.0 GHz. Designed for Class A Linear Power Amplifiers Specified 25 Volt, 900 MHz Characteristics:Output Power 6.0 WattsPower Gain 6.5 dB Min, Class AB6.0 W, TO 1.0 GHzLI

 0.1. Size:55K  motorola
 mrf1032r.pdf pdf_icon

MRF1032

MOTOROLAOrder this documentSEMICONDUCTOR TECHNICAL DATAby MRF1032/DThe RF LineUHF Power TransistorMRF1032. . . designed primarily for largesignal output and driver amplifier stages to1.0 GHz. Designed for Class A Linear Power Amplifiers Specified 25 Volt, 900 MHz Characteristics:Output Power 6.0 WattsPower Gain 6.5 dB Min, Class AB6.0 W, TO 1.0 GHzLI

 8.1. Size:100K  motorola
 mrf1035mbrev0.pdf pdf_icon

MRF1032

MOTOROLAOrder this documentSEMICONDUCTOR TECHNICAL DATAby MRF1035MB/DThe RF LineMicrowave PulseMRF1035MBPower TransistorsDesigned for Class B and C common base amplifier applications in short andlong pulse TACAN, IFF, DME, and radar transmitters. Guaranteed Performance @ 1090 MHz, 50 VdcOutput Power = 35 Watts Peak35 W (PEAK), 9601215 MHzMinimum Gain = 10 dBMIC

 8.2. Size:54K  motorola
 mrf1030r.pdf pdf_icon

MRF1032

MOTOROLAOrder this documentSEMICONDUCTOR TECHNICAL DATAby MRF1030/DThe RF LineUHF Power TransistorMRF1030. . . designed primarily for wideband, largesignal output and driver amplifierstages to 1.0 GHz. Designed for Class A Linear Power Amplifiers Specified 25 Volt, 900 MHz Characteristics:Output Power 3.0 WattsPower Gain 7.5 dB Min, Class AB3.0 W, TO 1

MOSTRAR MÁS

Otros transistores... MRF534 , MRF536 , MRF0211LT1 , MRF1000MA , MRF10070 , MRF1029 , MRF1030 , MRF1031 , SS8050 , MRF1035MA , MRF1035MB , MRF10500 , MRF10501 , MRF1375 , MRF1500 , MRF15030 , MRF15060 .

History: MMBT3904TT1 | 2SA1943O | MJE13002F5 | KRC832U | 2SC3000E | MJE13002DE1 | 2SC2368

 

 
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