All Transistors. MRF1032 Datasheet

 

MRF1032 Datasheet and Replacement


   Type Designator: MRF1032
   Material of Transistor: Si
   Polarity: NPN
   Maximum Collector Power Dissipation (Pc): 50 W
   Maximum Collector-Base Voltage |Vcb|: 60 V
   Maximum Collector-Emitter Voltage |Vce|: 30 V
   Maximum Emitter-Base Voltage |Veb|: 4 V
   Maximum Collector Current |Ic max|: 0.85 A
   Max. Operating Junction Temperature (Tj): 200 °C
   Transition Frequency (ft): 1000 MHz
   Collector Capacitance (Cc): 19.5(max) pF
   Forward Current Transfer Ratio (hFE), MIN: 20
   Noise Figure, dB: -
   Package: CASE244-04
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MRF1032 Datasheet (PDF)

 ..1. Size:55K  motorola
 mrf1032.pdf pdf_icon

MRF1032

MOTOROLAOrder this documentSEMICONDUCTOR TECHNICAL DATAby MRF1032/DThe RF LineUHF Power TransistorMRF1032. . . designed primarily for largesignal output and driver amplifier stages to1.0 GHz. Designed for Class A Linear Power Amplifiers Specified 25 Volt, 900 MHz Characteristics:Output Power 6.0 WattsPower Gain 6.5 dB Min, Class AB6.0 W, TO 1.0 GHzLI

 0.1. Size:55K  motorola
 mrf1032r.pdf pdf_icon

MRF1032

MOTOROLAOrder this documentSEMICONDUCTOR TECHNICAL DATAby MRF1032/DThe RF LineUHF Power TransistorMRF1032. . . designed primarily for largesignal output and driver amplifier stages to1.0 GHz. Designed for Class A Linear Power Amplifiers Specified 25 Volt, 900 MHz Characteristics:Output Power 6.0 WattsPower Gain 6.5 dB Min, Class AB6.0 W, TO 1.0 GHzLI

 8.1. Size:100K  motorola
 mrf1035mbrev0.pdf pdf_icon

MRF1032

MOTOROLAOrder this documentSEMICONDUCTOR TECHNICAL DATAby MRF1035MB/DThe RF LineMicrowave PulseMRF1035MBPower TransistorsDesigned for Class B and C common base amplifier applications in short andlong pulse TACAN, IFF, DME, and radar transmitters. Guaranteed Performance @ 1090 MHz, 50 VdcOutput Power = 35 Watts Peak35 W (PEAK), 9601215 MHzMinimum Gain = 10 dBMIC

 8.2. Size:54K  motorola
 mrf1030r.pdf pdf_icon

MRF1032

MOTOROLAOrder this documentSEMICONDUCTOR TECHNICAL DATAby MRF1030/DThe RF LineUHF Power TransistorMRF1030. . . designed primarily for wideband, largesignal output and driver amplifierstages to 1.0 GHz. Designed for Class A Linear Power Amplifiers Specified 25 Volt, 900 MHz Characteristics:Output Power 3.0 WattsPower Gain 7.5 dB Min, Class AB3.0 W, TO 1

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Keywords - MRF1032 transistor datasheet

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