MRF1035MA
. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: MRF1035MA
Material: Si
Polaridad de transistor: NPN
ESPECIFICACIONES MÁXIMAS
Disipación total del dispositivo (Pc): 35
W
Tensión colector-base (Vcb): 60
V
Tensión colector-emisor (Vce): 60
V
Tensión emisor-base (Veb): 4
V
Corriente del colector DC máxima (Ic): 2
A
Temperatura operativa máxima (Tj): 150
°C
CARACTERÍSTICAS ELÉCTRICAS
Transición de frecuencia (ft): 1100
MHz
Capacitancia de salida (Cc): 10
pF
Ganancia de corriente contínua (hfe): 10
Paquete / Cubierta: CASE332-04
Búsqueda de reemplazo de transistor bipolar MRF1035MA
MRF1035MA
Datasheet (PDF)
..1. Size:113K motorola
mrf1035ma mrf1035mb.pdf
MOTOROLAOrder this documentSEMICONDUCTOR TECHNICAL DATAby MRF1035MA/DThe RF LineMicrowave PulseMRF1035MAPower TransistorsMRF1035MB. . . designed for Class B and C common base amplifier applications in shortand long pulse TACAN, IFF, DME, and radar transmitters. Guaranteed Performance @ 1090 MHz, 50 VdcOutput Power = 35 Watts Peak35 W (PEAK), 9601215 MHzMinimum
6.1. Size:100K motorola
mrf1035mbrev0.pdf
MOTOROLAOrder this documentSEMICONDUCTOR TECHNICAL DATAby MRF1035MB/DThe RF LineMicrowave PulseMRF1035MBPower TransistorsDesigned for Class B and C common base amplifier applications in short andlong pulse TACAN, IFF, DME, and radar transmitters. Guaranteed Performance @ 1090 MHz, 50 VdcOutput Power = 35 Watts Peak35 W (PEAK), 9601215 MHzMinimum Gain = 10 dBMIC
6.2. Size:113K motorola
mrf1035m.pdf
MOTOROLAOrder this documentSEMICONDUCTOR TECHNICAL DATAby MRF1035MA/DThe RF LineMicrowave PulseMRF1035MAPower TransistorsMRF1035MB. . . designed for Class B and C common base amplifier applications in shortand long pulse TACAN, IFF, DME, and radar transmitters. Guaranteed Performance @ 1090 MHz, 50 VdcOutput Power = 35 Watts Peak35 W (PEAK), 9601215 MHzMinimum
6.3. Size:100K motorola
mrf1035mb.pdf
MOTOROLAOrder this documentSEMICONDUCTOR TECHNICAL DATAby MRF1035MB/DThe RF LineMicrowave PulseMRF1035MBPower TransistorsDesigned for Class B and C common base amplifier applications in short andlong pulse TACAN, IFF, DME, and radar transmitters. Guaranteed Performance @ 1090 MHz, 50 VdcOutput Power = 35 Watts Peak35 W (PEAK), 9601215 MHzMinimum Gain = 10 dBMIC
Otros transistores... 2N3200
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.