MRF1035MA Datasheet, Equivalent, Cross Reference Search

   Type Designator: MRF1035MA
   Material of Transistor: Si
   Polarity: NPN
   Maximum Collector Power Dissipation (Pc): 35 W
   Maximum Collector-Base Voltage |Vcb|: 60 V
   Maximum Collector-Emitter Voltage |Vce|: 60 V
   Maximum Emitter-Base Voltage |Veb|: 4 V
   Maximum Collector Current |Ic max|: 2 A
   Max. Operating Junction Temperature (Tj): 150 °C
   Transition Frequency (ft): 1100 MHz
   Collector Capacitance (Cc): 10 pF
   Forward Current Transfer Ratio (hFE), MIN: 10
   Noise Figure, dB: -
   Package: CASE332-04

MRF1035MA Transistor Equivalent Substitute - Cross-Reference Search

MRF1035MA Datasheet (PDF)

..1. Size:113K motorola
mrf1035ma mrf1035mb.pdf

MOTOROLAOrder this documentSEMICONDUCTOR TECHNICAL DATAby MRF1035MA/DThe RF LineMicrowave PulseMRF1035MAPower TransistorsMRF1035MB. . . designed for Class B and C common base amplifier applications in shortand long pulse TACAN, IFF, DME, and radar transmitters. Guaranteed Performance @ 1090 MHz, 50 VdcOutput Power = 35 Watts Peak35 W (PEAK), 9601215 MHzMinimum

6.1. Size:100K motorola
mrf1035mbrev0.pdf

MOTOROLAOrder this documentSEMICONDUCTOR TECHNICAL DATAby MRF1035MB/DThe RF LineMicrowave PulseMRF1035MBPower TransistorsDesigned for Class B and C common base amplifier applications in short andlong pulse TACAN, IFF, DME, and radar transmitters. Guaranteed Performance @ 1090 MHz, 50 VdcOutput Power = 35 Watts Peak35 W (PEAK), 9601215 MHzMinimum Gain = 10 dBMIC

6.2. Size:113K motorola
mrf1035m.pdf