MRF1035MB Todos los transistores

 ..1. Size:100K  motorola
 mrf1035mb.pdf

MOTOROLA Order this document SEMICONDUCTOR TECHNICAL DATA by MRF1035MB/D The RF Line Microwave Pulse MRF1035MB Power Transistors Designed for Class B and C common base amplifier applications in short and long pulse TACAN, IFF, DME, and radar transmitters. Guaranteed Performance @ 1090 MHz, 50 Vdc Output Power = 35 Watts Peak 35 W (PEAK), 960 1215 MHz Minimum Gain = 10 dB MIC

 ..2. Size:113K  motorola
 mrf1035ma mrf1035mb.pdf

MOTOROLA Order this document SEMICONDUCTOR TECHNICAL DATA by MRF1035MA/D The RF Line Microwave Pulse MRF1035MA Power Transistors MRF1035MB . . . designed for Class B and C common base amplifier applications in short and long pulse TACAN, IFF, DME, and radar transmitters. Guaranteed Performance @ 1090 MHz, 50 Vdc Output Power = 35 Watts Peak 35 W (PEAK), 960 1215 MHz Minimum

 0.1. Size:100K  motorola
 mrf1035mbrev0.pdf

MOTOROLA Order this document SEMICONDUCTOR TECHNICAL DATA by MRF1035MB/D The RF Line Microwave Pulse MRF1035MB Power Transistors Designed for Class B and C common base amplifier applications in short and long pulse TACAN, IFF, DME, and radar transmitters. Guaranteed Performance @ 1090 MHz, 50 Vdc Output Power = 35 Watts Peak 35 W (PEAK), 960 1215 MHz Minimum Gain = 10 dB MIC

 6.1. Size:113K  motorola
 mrf1035m.pdf

MOTOROLA Order this document SEMICONDUCTOR TECHNICAL DATA by MRF1035MA/D The RF Line Microwave Pulse MRF1035MA Power Transistors MRF1035MB . . . designed for Class B and C common base amplifier applications in short and long pulse TACAN, IFF, DME, and radar transmitters. Guaranteed Performance @ 1090 MHz, 50 Vdc Output Power = 35 Watts Peak 35 W (PEAK), 960 1215 MHz Minimum

 7.1. Size:101K  motorola
 mrf10350.pdf

MOTOROLA Order this document SEMICONDUCTOR TECHNICAL DATA by MRF10350/D The RF Line Microwave Pulse MRF10350 Power Transistor Designed for 1025 1150 MHz pulse common base amplifier applications such as TCAS, TACAN and Mode S transmitters. Guaranteed Performance @ 1090 MHz Output Power = 350 Watts Peak 350 W (PEAK) Gain = 8.5 dB Min, 9.0 dB (Typ) 1025 1150 MHz MICROWAVE

 7.2. Size:183K  macom
 mrf10350.pdf

MRF10350 Microwave Pulse Power Silicon NPN Transistor M/A-COM Products Released - Rev. 07.07 350W (peak), 1025 1150MHz Product Image Designed for 1025 1150 MHz pulse common base amplifier applications such as TCAS, TACAN and Mode S transmitters. Guaranteed performance @ 1090 MHz Output power = 350 W Peak Gain = 8.5 dB min, 9.0 dB (typ.) 100% tested for load