MRF1035MB pdf Datasheet and Replacements, Transistor Equivalent Finder, Cross Reference

MRF1035MB Specs and Replacement

Type Designator: MRF1035MB

Material of Transistor: Si

Polarity: NPN

Absolute Maximum Ratings

Maximum Collector Power Dissipation (Pc): 35 W

Maximum Collector-Base Voltage |Vcb|: 60 V

Maximum Collector-Emitter Voltage |Vce|: 60 V

Maximum Emitter-Base Voltage |Veb|: 4 V

Maximum Collector Current |Ic max|: 2 A

Max. Operating Junction Temperature (Tj): 150 °C

Electrical Characteristics

Transition Frequency (ft): 1100 MHz

Collector Capacitance (Cc): 10 pF

Forward Current Transfer Ratio (hFE), MIN: 10

Noise Figure, dB: -

Package: CASE332A-03

MRF1035MB Substitution

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MRF1035MB datasheet

..1. Size:100K motorola

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MOTOROLA Order this document SEMICONDUCTOR TECHNICAL DATA by MRF1035MB/D The RF Line Microwave Pulse MRF1035MB Power Transistors Designed for Class B and C common base amplifier applications in short and long pulse TACAN, IFF, DME, and radar transmitters. Guaranteed Performance @ 1090 MHz, 50 Vdc Output Power = 35 Watts Peak 35 W (PEAK), 960 1215 MHz Minimum Gain = 10 dB MIC... See More ⇒

..2. Size:113K motorola

mrf1035ma mrf1035mb.pdf pdf_icon

MOTOROLA Order this document SEMICONDUCTOR TECHNICAL DATA by MRF1035MA/D The RF Line Microwave Pulse MRF1035MA Power Transistors MRF1035MB . . . designed for Class B and C common base amplifier applications in short and long pulse TACAN, IFF, DME, and radar transmitters. Guaranteed Performance @ 1090 MHz, 50 Vdc Output Power = 35 Watts Peak 35 W (PEAK), 960 1215 MHz Minimum ... See More ⇒

0.1. Size:100K motorola

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