MRF1375 . Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: MRF1375
Material: Si
Polaridad de transistor: NPN
ESPECIFICACIONES MÁXIMAS
Disipación total del dispositivo (Pc): 1458 W
Tensión colector-base (Vcb): 70 V
Tensión colector-emisor (Vce): 70 V
Tensión emisor-base (Veb): 4 V
Corriente del colector DC máxima (Ic): 29 A
Temperatura operativa máxima (Tj): 200 °C
CARACTERÍSTICAS ELÉCTRICAS
Transición de frecuencia (ft): 1100 MHz
Ganancia de corriente contínua (hfe): 10
Paquete / Cubierta: CASE355G-01
Búsqueda de reemplazo de transistor bipolar MRF1375
MRF1375 Datasheet (PDF)
mrf1375.pdf
MOTOROLAOrder this documentSEMICONDUCTOR TECHNICAL DATAby MRF1375/DThe RF LineMicrowave PulseMRF1375Power TransistorDesigned for 10251150 MHz pulse common base amplifier applicationssuch as TACAN and DME. Guaranteed Performance @ 1090 MHzOutput Power = 375 Watts Peak375 W (PEAK), 10251150 MHzGain = 6.7 dB Min 7.5 dB (Typ)MICROWAVE POWER 100% Tested for
mrf1375r.pdf
MOTOROLAOrder this documentSEMICONDUCTOR TECHNICAL DATAby MRF1375/DThe RF LineMicrowave PulseMRF1375Power TransistorDesigned for 10251150 MHz pulse common base amplifier applicationssuch as TACAN and DME. Guaranteed Performance @ 1090 MHzOutput Power = 375 Watts Peak375 W (PEAK), 10251150 MHzGain = 6.7 dB Min 7.5 dB (Typ)MICROWAVE POWER 100% Tested for
mrf137.pdf
MOTOROLAOrder this documentSEMICONDUCTOR TECHNICAL DATAby MRF137/DThe RF MOSFET LineRF Power Field-Effect TransistorNChannel EnhancementMode MRF137. . . designed for wideband largesignal output and driver stages up to400 MHz range. Guaranteed 28 Volt, 150 MHz PerformanceOutput Power = 30 WattsMinimum Gain = 13 dB30 W, to 400 MHzEfficiency 60% (Typical)
mrf137re.pdf
MOTOROLAOrder this documentSEMICONDUCTOR TECHNICAL DATAby MRF137/DThe RF MOSFET LineRF Power Field-Effect TransistorNChannel EnhancementMode MRF137. . . designed for wideband largesignal output and driver stages up to400 MHz range. Guaranteed 28 Volt, 150 MHz PerformanceOutput Power = 30 WattsMinimum Gain = 13 dB30 W, to 400 MHzEfficiency 60% (Typical)
mrf137.pdf
MRF137 The RF MOSFET Line M/A-COM Products Released - Rev. 05202009 30W, to 400MHz, 28V Product Image Designed for wideband large signal output and drive stages up to 400 MHz range. NChannel enhancement mode Guaranteed 28 V, 150 MHz performance Output power = 30 W Minimum gain = 13 dB Efficiency 60% (Typical) Small and largesignal characterizati
Otros transistores... 2SA1771 , 2SA178 , 2SA1790 , 2SA1791 , 2SA1792 , 2SA1793 , 2SA1794 , 2SA1795 , 13009 , 2SA1799 , 2SA17H , 2SA18 , 2SA180 , 2SA1800 , 2SA1800O , 2SA1800R , 2SA1800Y .
