MRF1375 Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: MRF1375
Material: Si
Polaridad de transistor: NPN
ESPECIFICACIONES MÁXIMAS
Disipación total del dispositivo (Pc): 1458 W
Tensión colector-base (Vcb): 70 V
Tensión colector-emisor (Vce): 70 V
Tensión emisor-base (Veb): 4 V
Corriente del colector DC máxima (Ic): 29 A
Temperatura operativa máxima (Tj): 200 °C
CARACTERÍSTICAS ELÉCTRICAS
Transición de frecuencia (fT): 1100 MHz
Ganancia de corriente contínua (hFE): 10
Encapsulados: CASE355G-01
Búsqueda de reemplazo de MRF1375
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MRF1375 datasheet
mrf1375.pdf
MOTOROLA Order this document SEMICONDUCTOR TECHNICAL DATA by MRF1375/D The RF Line Microwave Pulse MRF1375 Power Transistor Designed for 1025 1150 MHz pulse common base amplifier applications such as TACAN and DME. Guaranteed Performance @ 1090 MHz Output Power = 375 Watts Peak 375 W (PEAK), 1025 1150 MHz Gain = 6.7 dB Min 7.5 dB (Typ) MICROWAVE POWER 100% Tested for
mrf1375r.pdf
MOTOROLA Order this document SEMICONDUCTOR TECHNICAL DATA by MRF1375/D The RF Line Microwave Pulse MRF1375 Power Transistor Designed for 1025 1150 MHz pulse common base amplifier applications such as TACAN and DME. Guaranteed Performance @ 1090 MHz Output Power = 375 Watts Peak 375 W (PEAK), 1025 1150 MHz Gain = 6.7 dB Min 7.5 dB (Typ) MICROWAVE POWER 100% Tested for
mrf137.pdf
MOTOROLA Order this document SEMICONDUCTOR TECHNICAL DATA by MRF137/D The RF MOSFET Line RF Power Field-Effect Transistor N Channel Enhancement Mode MRF137 . . . designed for wideband large signal output and driver stages up to 400 MHz range. Guaranteed 28 Volt, 150 MHz Performance Output Power = 30 Watts Minimum Gain = 13 dB 30 W, to 400 MHz Efficiency 60% (Typical)
mrf137re.pdf
MOTOROLA Order this document SEMICONDUCTOR TECHNICAL DATA by MRF137/D The RF MOSFET Line RF Power Field-Effect Transistor N Channel Enhancement Mode MRF137 . . . designed for wideband large signal output and driver stages up to 400 MHz range. Guaranteed 28 Volt, 150 MHz Performance Output Power = 30 Watts Minimum Gain = 13 dB 30 W, to 400 MHz Efficiency 60% (Typical)
Otros transistores... MRF1029, MRF1030, MRF1031, MRF1032, MRF1035MA, MRF1035MB, MRF10500, MRF10501, TIP2955, MRF1500, MRF15030, MRF15060, MRF15060S, MRF15090, MRF16030, MRF2000-5L, MRF20030
History: CSC945P
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