MRF1375 Specs and Replacement

Type Designator: MRF1375

Material of Transistor: Si

Polarity: NPN

Absolute Maximum Ratings

Maximum Collector Power Dissipation (Pc): 1458 W

Maximum Collector-Base Voltage |Vcb|: 70 V

Maximum Collector-Emitter Voltage |Vce|: 70 V

Maximum Emitter-Base Voltage |Veb|: 4 V

Maximum Collector Current |Ic max|: 29 A

Max. Operating Junction Temperature (Tj): 200 °C

Electrical Characteristics

Transition Frequency (ft): 1100 MHz

Forward Current Transfer Ratio (hFE), MIN: 10

Noise Figure, dB: -

Package: CASE355G-01

 MRF1375 Substitution

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MRF1375 datasheet

 ..1. Size:98K  motorola

mrf1375.pdf pdf_icon

MRF1375

MOTOROLA Order this document SEMICONDUCTOR TECHNICAL DATA by MRF1375/D The RF Line Microwave Pulse MRF1375 Power Transistor Designed for 1025 1150 MHz pulse common base amplifier applications such as TACAN and DME. Guaranteed Performance @ 1090 MHz Output Power = 375 Watts Peak 375 W (PEAK), 1025 1150 MHz Gain = 6.7 dB Min 7.5 dB (Typ) MICROWAVE POWER 100% Tested for ... See More ⇒

 0.1. Size:98K  motorola

mrf1375r.pdf pdf_icon

MRF1375

MOTOROLA Order this document SEMICONDUCTOR TECHNICAL DATA by MRF1375/D The RF Line Microwave Pulse MRF1375 Power Transistor Designed for 1025 1150 MHz pulse common base amplifier applications such as TACAN and DME. Guaranteed Performance @ 1090 MHz Output Power = 375 Watts Peak 375 W (PEAK), 1025 1150 MHz Gain = 6.7 dB Min 7.5 dB (Typ) MICROWAVE POWER 100% Tested for ... See More ⇒

 8.1. Size:196K  motorola

mrf137.pdf pdf_icon

MRF1375

MOTOROLA Order this document SEMICONDUCTOR TECHNICAL DATA by MRF137/D The RF MOSFET Line RF Power Field-Effect Transistor N Channel Enhancement Mode MRF137 . . . designed for wideband large signal output and driver stages up to 400 MHz range. Guaranteed 28 Volt, 150 MHz Performance Output Power = 30 Watts Minimum Gain = 13 dB 30 W, to 400 MHz Efficiency 60% (Typical) ... See More ⇒

 8.2. Size:196K  motorola

mrf137re.pdf pdf_icon

MRF1375

MOTOROLA Order this document SEMICONDUCTOR TECHNICAL DATA by MRF137/D The RF MOSFET Line RF Power Field-Effect Transistor N Channel Enhancement Mode MRF137 . . . designed for wideband large signal output and driver stages up to 400 MHz range. Guaranteed 28 Volt, 150 MHz Performance Output Power = 30 Watts Minimum Gain = 13 dB 30 W, to 400 MHz Efficiency 60% (Typical) ... See More ⇒

Detailed specifications: MRF1029, MRF1030, MRF1031, MRF1032, MRF1035MA, MRF1035MB, MRF10500, MRF10501, TIP2955, MRF1500, MRF15030, MRF15060, MRF15060S, MRF15090, MRF16030, MRF2000-5L, MRF20030

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