MRF1375 Datasheet, Equivalent, Cross Reference Search
Type Designator: MRF1375
Material of Transistor: Si
Polarity: NPN
Maximum Collector Power Dissipation (Pc): 1458 W
Maximum Collector-Base Voltage |Vcb|: 70 V
Maximum Collector-Emitter Voltage |Vce|: 70 V
Maximum Emitter-Base Voltage |Veb|: 4 V
Maximum Collector Current |Ic max|: 29 A
Max. Operating Junction Temperature (Tj): 200 °C
Transition Frequency (ft): 1100 MHz
Forward Current Transfer Ratio (hFE), MIN: 10
Noise Figure, dB: -
Package: CASE355G-01
MRF1375 Transistor Equivalent Substitute - Cross-Reference Search
MRF1375 Datasheet (PDF)
mrf1375.pdf
MOTOROLAOrder this documentSEMICONDUCTOR TECHNICAL DATAby MRF1375/DThe RF LineMicrowave PulseMRF1375Power TransistorDesigned for 10251150 MHz pulse common base amplifier applicationssuch as TACAN and DME. Guaranteed Performance @ 1090 MHzOutput Power = 375 Watts Peak375 W (PEAK), 10251150 MHzGain = 6.7 dB Min 7.5 dB (Typ)MICROWAVE POWER 100% Tested for
mrf1375r.pdf
MOTOROLAOrder this documentSEMICONDUCTOR TECHNICAL DATAby MRF1375/DThe RF LineMicrowave PulseMRF1375Power TransistorDesigned for 10251150 MHz pulse common base amplifier applicationssuch as TACAN and DME. Guaranteed Performance @ 1090 MHzOutput Power = 375 Watts Peak375 W (PEAK), 10251150 MHzGain = 6.7 dB Min 7.5 dB (Typ)MICROWAVE POWER 100% Tested for
mrf137.pdf
MOTOROLAOrder this documentSEMICONDUCTOR TECHNICAL DATAby MRF137/DThe RF MOSFET LineRF Power Field-Effect TransistorNChannel EnhancementMode MRF137. . . designed for wideband largesignal output and driver stages up to400 MHz range. Guaranteed 28 Volt, 150 MHz PerformanceOutput Power = 30 WattsMinimum Gain = 13 dB30 W, to 400 MHzEfficiency 60% (Typical)
mrf137re.pdf
MOTOROLAOrder this documentSEMICONDUCTOR TECHNICAL DATAby MRF137/DThe RF MOSFET LineRF Power Field-Effect TransistorNChannel EnhancementMode MRF137. . . designed for wideband largesignal output and driver stages up to400 MHz range. Guaranteed 28 Volt, 150 MHz PerformanceOutput Power = 30 WattsMinimum Gain = 13 dB30 W, to 400 MHzEfficiency 60% (Typical)
mrf137.pdf
MRF137 The RF MOSFET Line M/A-COM Products Released - Rev. 05202009 30W, to 400MHz, 28V Product Image Designed for wideband large signal output and drive stages up to 400 MHz range. NChannel enhancement mode Guaranteed 28 V, 150 MHz performance Output power = 30 W Minimum gain = 13 dB Efficiency 60% (Typical) Small and largesignal characterizati
Datasheet: 2N3200 , 2N3201 , 2N3202 , 2N3203 , 2N3204 , 2N3205 , 2N3206 , 2N3207 , B772 , 2N3209 , 2N3209AQF , 2N3209CSM , 2N3209DCSM , 2N3209L , 2N321 , 2N3210 , 2N3211 .
