MRF20030 Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: MRF20030

Material: Si

Polaridad de transistor: NPN

ESPECIFICACIONES MÁXIMAS

Disipación total del dispositivo (Pc): 125 W

Tensión colector-base (Vcb): 60 V

Tensión colector-emisor (Vce): 25 V

Tensión emisor-base (Veb): 3 V

Corriente del colector DC máxima (Ic): 4 A

Temperatura operativa máxima (Tj): 200 °C

CARACTERÍSTICAS ELÉCTRICAS

Transición de frecuencia (fT): 2000 MHz

Capacitancia de salida (Cc): 28 pF

Ganancia de corriente contínua (hFE): 20

Encapsulados: CASE395D-03

 Búsqueda de reemplazo de MRF20030

- Selecciónⓘ de transistores por parámetros

 

MRF20030 datasheet

 ..1. Size:111K  motorola
mrf20030.pdf pdf_icon

MRF20030

MOTOROLA Order this document SEMICONDUCTOR TECHNICAL DATA by MRF20030/D The RF Sub Micron Bipolar Line MRF20030 RF Power Bipolar Transistor Designed for broadband commercial and industrial applications at frequen- cies from 1800 to 2000 MHz. The high gain and broadband performance of this device makes it ideal for large signal, common emitter class A and class AB 30 W, 2.0 GHz

 0.1. Size:111K  motorola
mrf20030rev1.pdf pdf_icon

MRF20030

MOTOROLA Order this document SEMICONDUCTOR TECHNICAL DATA by MRF20030/D The RF Sub Micron Bipolar Line MRF20030 RF Power Bipolar Transistor Designed for broadband commercial and industrial applications at frequen- cies from 1800 to 2000 MHz. The high gain and broadband performance of this device makes it ideal for large signal, common emitter class A and class AB 30 W, 2.0 GHz

 8.1. Size:111K  motorola
mrf2000-5l.pdf pdf_icon

MRF20030

MOTOROLA Order this document SEMICONDUCTOR TECHNICAL DATA by MRF2000 5L/D The RF Line Microwave Linear MRF2000-5L Power Transistor Designed primarily for wideband, large signal output and driver amplifier stages in the 1.0 to 2.0 GHz frequency range. Designed for Class A or AB, Common Emitter Power Amplifiers 7.0 8.0 dB GAIN Specified 20 Volt, 2.0 GHz Characteristic Powe

 8.2. Size:111K  motorola
mrf2000-.pdf pdf_icon

MRF20030

MOTOROLA Order this document SEMICONDUCTOR TECHNICAL DATA by MRF2000 5L/D The RF Line Microwave Linear MRF2000-5L Power Transistor Designed primarily for wideband, large signal output and driver amplifier stages in the 1.0 to 2.0 GHz frequency range. Designed for Class A or AB, Common Emitter Power Amplifiers 7.0 8.0 dB GAIN Specified 20 Volt, 2.0 GHz Characteristic Powe

Otros transistores... MRF1375, MRF1500, MRF15030, MRF15060, MRF15060S, MRF15090, MRF16030, MRF2000-5L, BC547B, MRF20060, MRF20060S, MRF2947AT1, MRF2947AT2, MRF2947RAT1, MRF2947RAT2, MRF3094, MRF3095