Биполярный транзистор MRF20030 - описание производителя. Основные параметры. Даташиты.
Наименование производителя: MRF20030
Тип материала: Si
Полярность: NPN
Максимальная рассеиваемая мощность (Pc): 125 W
Макcимально допустимое напряжение коллектор-база (Ucb): 60 V
Макcимально допустимое напряжение коллектор-эмиттер (Uce): 25 V
Макcимально допустимое напряжение эмиттер-база (Ueb): 3 V
Макcимальный постоянный ток коллектора (Ic): 4 A
Предельная температура PN-перехода (Tj): 200 °C
Граничная частота коэффициента передачи тока (ft): 2000 MHz
Ёмкость коллекторного перехода (Cc): 28 pf
Статический коэффициент передачи тока (hfe): 20
Корпус транзистора: CASE395D-03
MRF20030 Datasheet (PDF)
mrf20030.pdf
MOTOROLAOrder this documentSEMICONDUCTOR TECHNICAL DATAby MRF20030/DThe RF SubMicron Bipolar LineMRF20030RF Power Bipolar TransistorDesigned for broadband commercial and industrial applications at frequen-cies from 1800 to 2000 MHz. The high gain and broadband performance of thisdevice makes it ideal for largesignal, commonemitter class A and class AB30 W, 2.0 GHz
mrf20030rev1.pdf
MOTOROLAOrder this documentSEMICONDUCTOR TECHNICAL DATAby MRF20030/DThe RF SubMicron Bipolar LineMRF20030RF Power Bipolar TransistorDesigned for broadband commercial and industrial applications at frequen-cies from 1800 to 2000 MHz. The high gain and broadband performance of thisdevice makes it ideal for largesignal, commonemitter class A and class AB30 W, 2.0 GHz
mrf2000-5l.pdf
MOTOROLAOrder this documentSEMICONDUCTOR TECHNICAL DATAby MRF20005L/DThe RF LineMicrowave LinearMRF2000-5LPower TransistorDesigned primarily for wideband, large signal output and driver amplifierstages in the 1.0 to 2.0 GHz frequency range. Designed for Class A or AB, Common Emitter Power Amplifiers7.08.0 dB GAIN Specified 20 Volt, 2.0 GHz Characteristic Powe
mrf2000-.pdf
MOTOROLAOrder this documentSEMICONDUCTOR TECHNICAL DATAby MRF20005L/DThe RF LineMicrowave LinearMRF2000-5LPower TransistorDesigned primarily for wideband, large signal output and driver amplifierstages in the 1.0 to 2.0 GHz frequency range. Designed for Class A or AB, Common Emitter Power Amplifiers7.08.0 dB GAIN Specified 20 Volt, 2.0 GHz Characteristic Powe
mrf20060 mrf20060s.pdf
MOTOROLAOrder this documentSEMICONDUCTOR TECHNICAL DATAby MRF20060/DThe RF SubMicron Bipolar LineRF Power Bipolar TransistorsMRF20060The MRF20060 and MRF20060S are designed for broadband commercialMRF20060Sand industrial applications at frequencies from 1800 to 2000 MHz. The highgain, excellent linearity and broadband performance of these devices makethem ideal for larg
mrf20060rev0m.pdf
MOTOROLAOrder this documentSEMICONDUCTOR TECHNICAL DATAby MRF20060/DThe RF SubMicron Bipolar LineRF Power Bipolar TransistorsMRF20060The MRF20060 and MRF20060S are designed for broadband commercialMRF20060Sand industrial applications at frequencies from 1800 to 2000 MHz. The highgain, excellent linearity and broadband performance of these devices makethem ideal for larg
Другие транзисторы... 2N3200 , 2N3201 , 2N3202 , 2N3203 , 2N3204 , 2N3205 , 2N3206 , 2N3207 , B772 , 2N3209 , 2N3209AQF , 2N3209CSM , 2N3209DCSM , 2N3209L , 2N321 , 2N3210 , 2N3211 .
Список транзисторов
Обновления
BJT: SBT42 | 2SA200-Y | 2SA200-O | 2SD882-Q | 2SD882-P | 2SD882-E | 2SC945-L | 2SC945-H | 2SC4226-R23 | 2SC3357-F | 2SC3357-E | 2SC3356-R26 | 2SC3356-R24 | 2SC3356-R23 | 2SB772-Q | 2SB772-P | 2SB772-E | 2SA1015-L | 2SA1015-H | HSS8550 | HSS8050