MRF20030 Specs and Replacement
Type Designator: MRF20030
Material of Transistor: Si
Polarity: NPN
Absolute Maximum Ratings
Maximum Collector Power Dissipation (Pc): 125 W
Maximum Collector-Base Voltage |Vcb|: 60 V
Maximum Collector-Emitter Voltage |Vce|: 25 V
Maximum Emitter-Base Voltage |Veb|: 3 V
Maximum Collector Current |Ic max|: 4 A
Max. Operating Junction Temperature (Tj): 200 °C
Electrical Characteristics
Transition Frequency (ft): 2000 MHz
Collector Capacitance (Cc): 28 pF
Forward Current Transfer Ratio (hFE), MIN: 20
Package: CASE395D-03
MRF20030 Substitution
- BJT ⓘ Cross-Reference Search
MRF20030 datasheet
MOTOROLA Order this document SEMICONDUCTOR TECHNICAL DATA by MRF20030/D The RF Sub Micron Bipolar Line MRF20030 RF Power Bipolar Transistor Designed for broadband commercial and industrial applications at frequen- cies from 1800 to 2000 MHz. The high gain and broadband performance of this device makes it ideal for large signal, common emitter class A and class AB 30 W, 2.0 GHz ... See More ⇒
MOTOROLA Order this document SEMICONDUCTOR TECHNICAL DATA by MRF20030/D The RF Sub Micron Bipolar Line MRF20030 RF Power Bipolar Transistor Designed for broadband commercial and industrial applications at frequen- cies from 1800 to 2000 MHz. The high gain and broadband performance of this device makes it ideal for large signal, common emitter class A and class AB 30 W, 2.0 GHz ... See More ⇒
MOTOROLA Order this document SEMICONDUCTOR TECHNICAL DATA by MRF2000 5L/D The RF Line Microwave Linear MRF2000-5L Power Transistor Designed primarily for wideband, large signal output and driver amplifier stages in the 1.0 to 2.0 GHz frequency range. Designed for Class A or AB, Common Emitter Power Amplifiers 7.0 8.0 dB GAIN Specified 20 Volt, 2.0 GHz Characteristic Powe... See More ⇒
MOTOROLA Order this document SEMICONDUCTOR TECHNICAL DATA by MRF2000 5L/D The RF Line Microwave Linear MRF2000-5L Power Transistor Designed primarily for wideband, large signal output and driver amplifier stages in the 1.0 to 2.0 GHz frequency range. Designed for Class A or AB, Common Emitter Power Amplifiers 7.0 8.0 dB GAIN Specified 20 Volt, 2.0 GHz Characteristic Powe... See More ⇒
Detailed specifications: MRF1375, MRF1500, MRF15030, MRF15060, MRF15060S, MRF15090, MRF16030, MRF2000-5L, BC547B, MRF20060, MRF20060S, MRF2947AT1, MRF2947AT2, MRF2947RAT1, MRF2947RAT2, MRF3094, MRF3095
Keywords - MRF20030 pdf specs
MRF20030 cross reference
MRF20030 equivalent finder
MRF20030 pdf lookup
MRF20030 substitution
MRF20030 replacement
History: MRF2000-5L
🌐 : EN ES РУ
LIST
Last Update
BJT: GA1A4M | SBT42 | 2SA200-Y | 2SA200-O | 2SD882-Q | 2SD882-P
Popular searches
2n4240 | 2n5210 transistor | toshiba 2sc2290 | pk6d0ba mosfet | 2sd726 | c536 transistor equivalent | 2sa1294 datasheet | mp10b transistor






