MRF20030 Specs and Replacement

Type Designator: MRF20030

Material of Transistor: Si

Polarity: NPN

Absolute Maximum Ratings

Maximum Collector Power Dissipation (Pc): 125 W

Maximum Collector-Base Voltage |Vcb|: 60 V

Maximum Collector-Emitter Voltage |Vce|: 25 V

Maximum Emitter-Base Voltage |Veb|: 3 V

Maximum Collector Current |Ic max|: 4 A

Max. Operating Junction Temperature (Tj): 200 °C

Electrical Characteristics

Transition Frequency (ft): 2000 MHz

Collector Capacitance (Cc): 28 pF

Forward Current Transfer Ratio (hFE), MIN: 20

Noise Figure, dB: -

Package: CASE395D-03

 MRF20030 Substitution

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MRF20030 datasheet

 ..1. Size:111K  motorola

mrf20030.pdf pdf_icon

MRF20030

MOTOROLA Order this document SEMICONDUCTOR TECHNICAL DATA by MRF20030/D The RF Sub Micron Bipolar Line MRF20030 RF Power Bipolar Transistor Designed for broadband commercial and industrial applications at frequen- cies from 1800 to 2000 MHz. The high gain and broadband performance of this device makes it ideal for large signal, common emitter class A and class AB 30 W, 2.0 GHz ... See More ⇒

 0.1. Size:111K  motorola

mrf20030rev1.pdf pdf_icon

MRF20030

MOTOROLA Order this document SEMICONDUCTOR TECHNICAL DATA by MRF20030/D The RF Sub Micron Bipolar Line MRF20030 RF Power Bipolar Transistor Designed for broadband commercial and industrial applications at frequen- cies from 1800 to 2000 MHz. The high gain and broadband performance of this device makes it ideal for large signal, common emitter class A and class AB 30 W, 2.0 GHz ... See More ⇒

 8.1. Size:111K  motorola

mrf2000-5l.pdf pdf_icon

MRF20030

MOTOROLA Order this document SEMICONDUCTOR TECHNICAL DATA by MRF2000 5L/D The RF Line Microwave Linear MRF2000-5L Power Transistor Designed primarily for wideband, large signal output and driver amplifier stages in the 1.0 to 2.0 GHz frequency range. Designed for Class A or AB, Common Emitter Power Amplifiers 7.0 8.0 dB GAIN Specified 20 Volt, 2.0 GHz Characteristic Powe... See More ⇒

 8.2. Size:111K  motorola

mrf2000-.pdf pdf_icon

MRF20030

MOTOROLA Order this document SEMICONDUCTOR TECHNICAL DATA by MRF2000 5L/D The RF Line Microwave Linear MRF2000-5L Power Transistor Designed primarily for wideband, large signal output and driver amplifier stages in the 1.0 to 2.0 GHz frequency range. Designed for Class A or AB, Common Emitter Power Amplifiers 7.0 8.0 dB GAIN Specified 20 Volt, 2.0 GHz Characteristic Powe... See More ⇒

Detailed specifications: MRF1375, MRF1500, MRF15030, MRF15060, MRF15060S, MRF15090, MRF16030, MRF2000-5L, BC547B, MRF20060, MRF20060S, MRF2947AT1, MRF2947AT2, MRF2947RAT1, MRF2947RAT2, MRF3094, MRF3095

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