MRF20030 Datasheet and Replacement
Type Designator: MRF20030
Material of Transistor: Si
Polarity: NPN
Maximum Collector Power Dissipation (Pc): 125 W
Maximum Collector-Base Voltage |Vcb|: 60 V
Maximum Collector-Emitter Voltage |Vce|: 25 V
Maximum Emitter-Base Voltage |Veb|: 3 V
Maximum Collector Current |Ic max|: 4 A
Max. Operating Junction Temperature (Tj): 200 °C
Transition Frequency (ft): 2000 MHz
Collector Capacitance (Cc): 28 pF
Forward Current Transfer Ratio (hFE), MIN: 20
Noise Figure, dB: -
Package: CASE395D-03
MRF20030 Substitution
MRF20030 Datasheet (PDF)
mrf20030.pdf

MOTOROLAOrder this documentSEMICONDUCTOR TECHNICAL DATAby MRF20030/DThe RF SubMicron Bipolar LineMRF20030RF Power Bipolar TransistorDesigned for broadband commercial and industrial applications at frequen-cies from 1800 to 2000 MHz. The high gain and broadband performance of thisdevice makes it ideal for largesignal, commonemitter class A and class AB30 W, 2.0 GHz
mrf20030rev1.pdf

MOTOROLAOrder this documentSEMICONDUCTOR TECHNICAL DATAby MRF20030/DThe RF SubMicron Bipolar LineMRF20030RF Power Bipolar TransistorDesigned for broadband commercial and industrial applications at frequen-cies from 1800 to 2000 MHz. The high gain and broadband performance of thisdevice makes it ideal for largesignal, commonemitter class A and class AB30 W, 2.0 GHz
mrf2000-5l.pdf

MOTOROLAOrder this documentSEMICONDUCTOR TECHNICAL DATAby MRF20005L/DThe RF LineMicrowave LinearMRF2000-5LPower TransistorDesigned primarily for wideband, large signal output and driver amplifierstages in the 1.0 to 2.0 GHz frequency range. Designed for Class A or AB, Common Emitter Power Amplifiers7.08.0 dB GAIN Specified 20 Volt, 2.0 GHz Characteristic Powe
mrf2000-.pdf

MOTOROLAOrder this documentSEMICONDUCTOR TECHNICAL DATAby MRF20005L/DThe RF LineMicrowave LinearMRF2000-5LPower TransistorDesigned primarily for wideband, large signal output and driver amplifierstages in the 1.0 to 2.0 GHz frequency range. Designed for Class A or AB, Common Emitter Power Amplifiers7.08.0 dB GAIN Specified 20 Volt, 2.0 GHz Characteristic Powe
Datasheet: MRF1375 , MRF1500 , MRF15030 , MRF15060 , MRF15060S , MRF15090 , MRF16030 , MRF2000-5L , D667 , MRF20060 , MRF20060S , MRF2947AT1 , MRF2947AT2 , MRF2947RAT1 , MRF2947RAT2 , MRF3094 , MRF3095 .
History: BTD5510F3
Keywords - MRF20030 transistor datasheet
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History: BTD5510F3



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