MRF20060 Todos los transistores

 

MRF20060 Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: MRF20060

Material: Si

Polaridad de transistor: NPN

ESPECIFICACIONES MÁXIMAS

Disipación total del dispositivo (Pc): 250 W

Tensión colector-base (Vcb): 60 V

Tensión colector-emisor (Vce): 30 V

Tensión emisor-base (Veb): 3 V

Corriente del colector DC máxima (Ic): 8 A

Temperatura operativa máxima (Tj): 200 °C

CARACTERÍSTICAS ELÉCTRICAS

Transición de frecuencia (fT): 2000 MHz

Capacitancia de salida (Cc): 55 pF

Ganancia de corriente contínua (hFE): 20

Encapsulados: CASE451-04

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MRF20060 datasheet

 ..1. Size:109K  motorola
mrf20060 mrf20060s.pdf pdf_icon

MRF20060

MOTOROLA Order this document SEMICONDUCTOR TECHNICAL DATA by MRF20060/D The RF Sub Micron Bipolar Line RF Power Bipolar Transistors MRF20060 The MRF20060 and MRF20060S are designed for broadband commercial MRF20060S and industrial applications at frequencies from 1800 to 2000 MHz. The high gain, excellent linearity and broadband performance of these devices make them ideal for larg

 0.1. Size:109K  motorola
mrf20060rev0m.pdf pdf_icon

MRF20060

MOTOROLA Order this document SEMICONDUCTOR TECHNICAL DATA by MRF20060/D The RF Sub Micron Bipolar Line RF Power Bipolar Transistors MRF20060 The MRF20060 and MRF20060S are designed for broadband commercial MRF20060S and industrial applications at frequencies from 1800 to 2000 MHz. The high gain, excellent linearity and broadband performance of these devices make them ideal for larg

 8.1. Size:111K  motorola
mrf2000-5l.pdf pdf_icon

MRF20060

MOTOROLA Order this document SEMICONDUCTOR TECHNICAL DATA by MRF2000 5L/D The RF Line Microwave Linear MRF2000-5L Power Transistor Designed primarily for wideband, large signal output and driver amplifier stages in the 1.0 to 2.0 GHz frequency range. Designed for Class A or AB, Common Emitter Power Amplifiers 7.0 8.0 dB GAIN Specified 20 Volt, 2.0 GHz Characteristic Powe

 8.2. Size:111K  motorola
mrf2000-.pdf pdf_icon

MRF20060

MOTOROLA Order this document SEMICONDUCTOR TECHNICAL DATA by MRF2000 5L/D The RF Line Microwave Linear MRF2000-5L Power Transistor Designed primarily for wideband, large signal output and driver amplifier stages in the 1.0 to 2.0 GHz frequency range. Designed for Class A or AB, Common Emitter Power Amplifiers 7.0 8.0 dB GAIN Specified 20 Volt, 2.0 GHz Characteristic Powe

Otros transistores... MRF1500 , MRF15030 , MRF15060 , MRF15060S , MRF15090 , MRF16030 , MRF2000-5L , MRF20030 , TIP142 , MRF20060S , MRF2947AT1 , MRF2947AT2 , MRF2947RAT1 , MRF2947RAT2 , MRF3094 , MRF3095 , MRF3096 .

 

 

 

 

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