MRF20060 Datasheet, Equivalent, Cross Reference Search
Type Designator: MRF20060
Material of Transistor: Si
Polarity: NPN
Maximum Collector Power Dissipation (Pc): 250 W
Maximum Collector-Base Voltage |Vcb|: 60 V
Maximum Collector-Emitter Voltage |Vce|: 30 V
Maximum Emitter-Base Voltage |Veb|: 3 V
Maximum Collector Current |Ic max|: 8 A
Max. Operating Junction Temperature (Tj): 200 °C
Transition Frequency (ft): 2000 MHz
Collector Capacitance (Cc): 55 pF
Forward Current Transfer Ratio (hFE), MIN: 20
Noise Figure, dB: -
Package: CASE451-04
MRF20060 Transistor Equivalent Substitute - Cross-Reference Search
MRF20060 Datasheet (PDF)
mrf20060 mrf20060s.pdf
MOTOROLAOrder this documentSEMICONDUCTOR TECHNICAL DATAby MRF20060/DThe RF SubMicron Bipolar LineRF Power Bipolar TransistorsMRF20060The MRF20060 and MRF20060S are designed for broadband commercialMRF20060Sand industrial applications at frequencies from 1800 to 2000 MHz. The highgain, excellent linearity and broadband performance of these devices makethem ideal for larg
mrf20060rev0m.pdf
MOTOROLAOrder this documentSEMICONDUCTOR TECHNICAL DATAby MRF20060/DThe RF SubMicron Bipolar LineRF Power Bipolar TransistorsMRF20060The MRF20060 and MRF20060S are designed for broadband commercialMRF20060Sand industrial applications at frequencies from 1800 to 2000 MHz. The highgain, excellent linearity and broadband performance of these devices makethem ideal for larg
mrf2000-5l.pdf
MOTOROLAOrder this documentSEMICONDUCTOR TECHNICAL DATAby MRF20005L/DThe RF LineMicrowave LinearMRF2000-5LPower TransistorDesigned primarily for wideband, large signal output and driver amplifierstages in the 1.0 to 2.0 GHz frequency range. Designed for Class A or AB, Common Emitter Power Amplifiers7.08.0 dB GAIN Specified 20 Volt, 2.0 GHz Characteristic Powe
mrf2000-.pdf
MOTOROLAOrder this documentSEMICONDUCTOR TECHNICAL DATAby MRF20005L/DThe RF LineMicrowave LinearMRF2000-5LPower TransistorDesigned primarily for wideband, large signal output and driver amplifierstages in the 1.0 to 2.0 GHz frequency range. Designed for Class A or AB, Common Emitter Power Amplifiers7.08.0 dB GAIN Specified 20 Volt, 2.0 GHz Characteristic Powe
mrf20030rev1.pdf
MOTOROLAOrder this documentSEMICONDUCTOR TECHNICAL DATAby MRF20030/DThe RF SubMicron Bipolar LineMRF20030RF Power Bipolar TransistorDesigned for broadband commercial and industrial applications at frequen-cies from 1800 to 2000 MHz. The high gain and broadband performance of thisdevice makes it ideal for largesignal, commonemitter class A and class AB30 W, 2.0 GHz
mrf20030.pdf
MOTOROLAOrder this documentSEMICONDUCTOR TECHNICAL DATAby MRF20030/DThe RF SubMicron Bipolar LineMRF20030RF Power Bipolar TransistorDesigned for broadband commercial and industrial applications at frequen-cies from 1800 to 2000 MHz. The high gain and broadband performance of thisdevice makes it ideal for largesignal, commonemitter class A and class AB30 W, 2.0 GHz
Datasheet: 2N3200 , 2N3201 , 2N3202 , 2N3203 , 2N3204 , 2N3205 , 2N3206 , 2N3207 , B772 , 2N3209 , 2N3209AQF , 2N3209CSM , 2N3209DCSM , 2N3209L , 2N321 , 2N3210 , 2N3211 .
