MRF20060 Specs and Replacement

Type Designator: MRF20060

Material of Transistor: Si

Polarity: NPN

Absolute Maximum Ratings

Maximum Collector Power Dissipation (Pc): 250 W

Maximum Collector-Base Voltage |Vcb|: 60 V

Maximum Collector-Emitter Voltage |Vce|: 30 V

Maximum Emitter-Base Voltage |Veb|: 3 V

Maximum Collector Current |Ic max|: 8 A

Max. Operating Junction Temperature (Tj): 200 °C

Electrical Characteristics

Transition Frequency (ft): 2000 MHz

Collector Capacitance (Cc): 55 pF

Forward Current Transfer Ratio (hFE), MIN: 20

Noise Figure, dB: -

Package: CASE451-04

 MRF20060 Substitution

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MRF20060 datasheet

 ..1. Size:109K  motorola

mrf20060 mrf20060s.pdf pdf_icon

MRF20060

MOTOROLA Order this document SEMICONDUCTOR TECHNICAL DATA by MRF20060/D The RF Sub Micron Bipolar Line RF Power Bipolar Transistors MRF20060 The MRF20060 and MRF20060S are designed for broadband commercial MRF20060S and industrial applications at frequencies from 1800 to 2000 MHz. The high gain, excellent linearity and broadband performance of these devices make them ideal for larg... See More ⇒

 0.1. Size:109K  motorola

mrf20060rev0m.pdf pdf_icon

MRF20060

MOTOROLA Order this document SEMICONDUCTOR TECHNICAL DATA by MRF20060/D The RF Sub Micron Bipolar Line RF Power Bipolar Transistors MRF20060 The MRF20060 and MRF20060S are designed for broadband commercial MRF20060S and industrial applications at frequencies from 1800 to 2000 MHz. The high gain, excellent linearity and broadband performance of these devices make them ideal for larg... See More ⇒

 8.1. Size:111K  motorola

mrf2000-5l.pdf pdf_icon

MRF20060

MOTOROLA Order this document SEMICONDUCTOR TECHNICAL DATA by MRF2000 5L/D The RF Line Microwave Linear MRF2000-5L Power Transistor Designed primarily for wideband, large signal output and driver amplifier stages in the 1.0 to 2.0 GHz frequency range. Designed for Class A or AB, Common Emitter Power Amplifiers 7.0 8.0 dB GAIN Specified 20 Volt, 2.0 GHz Characteristic Powe... See More ⇒

 8.2. Size:111K  motorola

mrf2000-.pdf pdf_icon

MRF20060

MOTOROLA Order this document SEMICONDUCTOR TECHNICAL DATA by MRF2000 5L/D The RF Line Microwave Linear MRF2000-5L Power Transistor Designed primarily for wideband, large signal output and driver amplifier stages in the 1.0 to 2.0 GHz frequency range. Designed for Class A or AB, Common Emitter Power Amplifiers 7.0 8.0 dB GAIN Specified 20 Volt, 2.0 GHz Characteristic Powe... See More ⇒

Detailed specifications: MRF1500, MRF15030, MRF15060, MRF15060S, MRF15090, MRF16030, MRF2000-5L, MRF20030, TIP142, MRF20060S, MRF2947AT1, MRF2947AT2, MRF2947RAT1, MRF2947RAT2, MRF3094, MRF3095, MRF3096

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