MRF20060. Аналоги и основные параметры

Наименование производителя: MRF20060

Тип материала: Si

Полярность: NPN

Предельные значения

Максимальная рассеиваемая мощность (Pc): 250 W

Макcимально допустимое напряжение коллектор-база (Ucb): 60 V

Макcимально допустимое напряжение коллектор-эмиттер (Uce): 30 V

Макcимально допустимое напряжение эмиттер-база (Ueb): 3 V

Макcимальный постоянный ток коллектора (Ic): 8 A

Предельная температура PN-перехода (Tj): 200 °C

Электрические характеристики

Граничная частота коэффициента передачи тока (ft): 2000 MHz

Ёмкость коллекторного перехода (Cc): 55 pf

Статический коэффициент передачи тока (hFE): 20

Корпус транзистора: CASE451-04

 Аналоги (замена) для MRF20060

- подборⓘ биполярного транзистора по параметрам

 

MRF20060 даташит

 ..1. Size:109K  motorola
 mrf20060 mrf20060s.pdf pdf_icon

MRF20060

MOTOROLA Order this document SEMICONDUCTOR TECHNICAL DATA by MRF20060/D The RF Sub Micron Bipolar Line RF Power Bipolar Transistors MRF20060 The MRF20060 and MRF20060S are designed for broadband commercial MRF20060S and industrial applications at frequencies from 1800 to 2000 MHz. The high gain, excellent linearity and broadband performance of these devices make them ideal for larg

 0.1. Size:109K  motorola
 mrf20060rev0m.pdf pdf_icon

MRF20060

MOTOROLA Order this document SEMICONDUCTOR TECHNICAL DATA by MRF20060/D The RF Sub Micron Bipolar Line RF Power Bipolar Transistors MRF20060 The MRF20060 and MRF20060S are designed for broadband commercial MRF20060S and industrial applications at frequencies from 1800 to 2000 MHz. The high gain, excellent linearity and broadband performance of these devices make them ideal for larg

 8.1. Size:111K  motorola
 mrf2000-5l.pdf pdf_icon

MRF20060

MOTOROLA Order this document SEMICONDUCTOR TECHNICAL DATA by MRF2000 5L/D The RF Line Microwave Linear MRF2000-5L Power Transistor Designed primarily for wideband, large signal output and driver amplifier stages in the 1.0 to 2.0 GHz frequency range. Designed for Class A or AB, Common Emitter Power Amplifiers 7.0 8.0 dB GAIN Specified 20 Volt, 2.0 GHz Characteristic Powe

 8.2. Size:111K  motorola
 mrf2000-.pdf pdf_icon

MRF20060

MOTOROLA Order this document SEMICONDUCTOR TECHNICAL DATA by MRF2000 5L/D The RF Line Microwave Linear MRF2000-5L Power Transistor Designed primarily for wideband, large signal output and driver amplifier stages in the 1.0 to 2.0 GHz frequency range. Designed for Class A or AB, Common Emitter Power Amplifiers 7.0 8.0 dB GAIN Specified 20 Volt, 2.0 GHz Characteristic Powe

ПОКАЗАТЬ ЕЩЁ

Другие транзисторы: MRF1500, MRF15030, MRF15060, MRF15060S, MRF15090, MRF16030, MRF2000-5L, MRF20030, TIP142, MRF20060S, MRF2947AT1, MRF2947AT2, MRF2947RAT1, MRF2947RAT2, MRF3094, MRF3095, MRF3096