MRF5583 . Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: MRF5583
Código: 5583
Material: Si
Polaridad de transistor: PNP
ESPECIFICACIONES MÁXIMAS
Disipación total del dispositivo (Pc): 1 W
Tensión colector-base (Vcb): 30 V
Tensión colector-emisor (Vce): 30 V
Tensión emisor-base (Veb): 3 V
Corriente del colector DC máxima (Ic): 0.5 A
Temperatura operativa máxima (Tj): 150 °C
CARACTERÍSTICAS ELÉCTRICAS
Transición de frecuencia (ft): 2100(typ) MHz
Ganancia de corriente contínua (hfe): 25
Paquete / Cubierta: SO8
Búsqueda de reemplazo de transistor bipolar MRF5583
MRF5583 Datasheet (PDF)
mrf5583.pdf
MOTOROLAOrder this documentSEMICONDUCTOR TECHNICAL DATAby MRF5583/DThe RF LinePNP SiliconMRF5583High-Frequency Transistor. . . designed for amplifier, oscillator or frequency multiplier applications inindustrial equipment. Suitable for use as a Class A, B or C output driver orpredriver stages in VHF and UHF. Low Cost SORF Plastic Surface Mount PackageIC = 500 mA
mrf5583r.pdf
MOTOROLAOrder this documentSEMICONDUCTOR TECHNICAL DATAby MRF5583/DThe RF LinePNP SiliconMRF5583High-Frequency Transistor. . . designed for amplifier, oscillator or frequency multiplier applications inindustrial equipment. Suitable for use as a Class A, B or C output driver orpredriver stages in VHF and UHF. Low Cost SORF Plastic Surface Mount PackageIC = 500 mA
mrf557re.pdf
MOTOROLAOrder this documentSEMICONDUCTOR TECHNICAL DATAby MRF557/DThe RF LineNPN SiliconMRF557RF Low Power TransistorDesigned primarily for wideband large signal predriver stages in the800 MHz frequency range. Specified @ 12.5 V, 870 MHz CharacteristicsOutput Power = 1.5 W1.5 W, 870 MHzMinimum Gain = 8.0 dBRF LOW POWEREfficiency 60% (Typ)TRANSISTOR Cost E
mrf555re.pdf
MOTOROLAOrder this documentSEMICONDUCTOR TECHNICAL DATAby MRF555/DThe RF LineNPN SiliconMRF555RF Low Power TransistorDesigned primarily for wideband large signal predriver stages in the UHFfrequency range. Specified @ 12.5 V, 470 MHz Characteristics @ Pout = 1.5 WCommon Emitter Power Gain = 12.5 dB (Typ)1.5 W, 470 MHzEfficiency 60% (Typ)RF LOW POWER Cost Effe
mrf557.pdf
MOTOROLAOrder this documentSEMICONDUCTOR TECHNICAL DATAby MRF557/DThe RF LineNPN SiliconMRF557RF Low Power TransistorDesigned primarily for wideband large signal predriver stages in the800 MHz frequency range. Specified @ 12.5 V, 870 MHz CharacteristicsOutput Power = 1.5 W1.5 W, 870 MHzMinimum Gain = 8.0 dBRF LOW POWEREfficiency 60% (Typ)TRANSISTOR Cost E
mrf553.pdf
MOTOROLAOrder this documentSEMICONDUCTOR TECHNICAL DATAby MRF553/DThe RF LineNPN SiliconMRF553RF Low Power TransistorDesigned primarily for wideband large signal predriver stages in the VHFfrequency range. Specified @ 12.5 V, 175 MHz CharacteristicsOutput Power = 1.5 W1.5 W, 175 MHzMinimum Gain = 11.5 dBRF LOW POWEREfficiency 60% (Typ)TRANSISTOR Cost Effe
mrf553re.pdf
MOTOROLAOrder this documentSEMICONDUCTOR TECHNICAL DATAby MRF553/DThe RF LineNPN SiliconMRF553RF Low Power TransistorDesigned primarily for wideband large signal predriver stages in the VHFfrequency range. Specified @ 12.5 V, 175 MHz CharacteristicsOutput Power = 1.5 W1.5 W, 175 MHzMinimum Gain = 11.5 dBRF LOW POWEREfficiency 60% (Typ)TRANSISTOR Cost Effe
mrf559re.pdf
MOTOROLAOrder this documentSEMICONDUCTOR TECHNICAL DATAby MRF559/DThe RF LineNPN SiliconMRF559High-Frequency Transistor. . . designed for UHF linear and largesignal amplifier applications. Specified 12.5 Volt, 870 MHz Characteristics Output Power = 0.5 WattsMinimum Gain = 8.0 dB0.5 W, 870 MHzEfficiency 50%HIGHFREQUENCY S Parameter Data From 250 MHz t
mrf559.pdf
MOTOROLAOrder this documentSEMICONDUCTOR TECHNICAL DATAby MRF559/DThe RF LineNPN SiliconMRF559High-Frequency Transistor. . . designed for UHF linear and largesignal amplifier applications. Specified 12.5 Volt, 870 MHz Characteristics Output Power = 0.5 WattsMinimum Gain = 8.0 dB0.5 W, 870 MHzEfficiency 50%HIGHFREQUENCY S Parameter Data From 250 MHz t
mrf555.pdf
MOTOROLAOrder this documentSEMICONDUCTOR TECHNICAL DATAby MRF555/DThe RF LineNPN SiliconMRF555RF Low Power TransistorDesigned primarily for wideband large signal predriver stages in the UHFfrequency range. Specified @ 12.5 V, 470 MHz Characteristics @ Pout = 1.5 WCommon Emitter Power Gain = 12.5 dB (Typ)1.5 W, 470 MHzEfficiency 60% (Typ)RF LOW POWER Cost Effe
Otros transistores... 2SA1801 , 2SA1802 , 2SA1802A , 2SA1803 , 2SA1803O , 2SA1803R , 2SA1804 , 2SA1804O , TIP31C , 2SA1805 , 2SA1805O , 2SA1805R , 2SA1806 , 2SA181 , 2SA1810 , 2SA1810B , 2SA1810C .
