MRF5583 Datasheet, Equivalent, Cross Reference Search
Type Designator: MRF5583
SMD Transistor Code: 5583
Material of Transistor: Si
Polarity: PNP
Maximum Collector Power Dissipation (Pc): 1 W
Maximum Collector-Base Voltage |Vcb|: 30 V
Maximum Collector-Emitter Voltage |Vce|: 30 V
Maximum Emitter-Base Voltage |Veb|: 3 V
Maximum Collector Current |Ic max|: 0.5 A
Max. Operating Junction Temperature (Tj): 150 °C
Transition Frequency (ft): 2100(typ) MHz
Forward Current Transfer Ratio (hFE), MIN: 25
Noise Figure, dB: -
Package: SO8
MRF5583 Transistor Equivalent Substitute - Cross-Reference Search
MRF5583 Datasheet (PDF)
mrf5583.pdf
MOTOROLAOrder this documentSEMICONDUCTOR TECHNICAL DATAby MRF5583/DThe RF LinePNP SiliconMRF5583High-Frequency Transistor. . . designed for amplifier, oscillator or frequency multiplier applications inindustrial equipment. Suitable for use as a Class A, B or C output driver orpredriver stages in VHF and UHF. Low Cost SORF Plastic Surface Mount PackageIC = 500 mA
mrf5583r.pdf
MOTOROLAOrder this documentSEMICONDUCTOR TECHNICAL DATAby MRF5583/DThe RF LinePNP SiliconMRF5583High-Frequency Transistor. . . designed for amplifier, oscillator or frequency multiplier applications inindustrial equipment. Suitable for use as a Class A, B or C output driver orpredriver stages in VHF and UHF. Low Cost SORF Plastic Surface Mount PackageIC = 500 mA
mrf557re.pdf
MOTOROLAOrder this documentSEMICONDUCTOR TECHNICAL DATAby MRF557/DThe RF LineNPN SiliconMRF557RF Low Power TransistorDesigned primarily for wideband large signal predriver stages in the800 MHz frequency range. Specified @ 12.5 V, 870 MHz CharacteristicsOutput Power = 1.5 W1.5 W, 870 MHzMinimum Gain = 8.0 dBRF LOW POWEREfficiency 60% (Typ)TRANSISTOR Cost E
mrf555re.pdf
MOTOROLAOrder this documentSEMICONDUCTOR TECHNICAL DATAby MRF555/DThe RF LineNPN SiliconMRF555RF Low Power TransistorDesigned primarily for wideband large signal predriver stages in the UHFfrequency range. Specified @ 12.5 V, 470 MHz Characteristics @ Pout = 1.5 WCommon Emitter Power Gain = 12.5 dB (Typ)1.5 W, 470 MHzEfficiency 60% (Typ)RF LOW POWER Cost Effe
mrf557.pdf
MOTOROLAOrder this documentSEMICONDUCTOR TECHNICAL DATAby MRF557/DThe RF LineNPN SiliconMRF557RF Low Power TransistorDesigned primarily for wideband large signal predriver stages in the800 MHz frequency range. Specified @ 12.5 V, 870 MHz CharacteristicsOutput Power = 1.5 W1.5 W, 870 MHzMinimum Gain = 8.0 dBRF LOW POWEREfficiency 60% (Typ)TRANSISTOR Cost E
mrf553.pdf
MOTOROLAOrder this documentSEMICONDUCTOR TECHNICAL DATAby MRF553/DThe RF LineNPN SiliconMRF553RF Low Power TransistorDesigned primarily for wideband large signal predriver stages in the VHFfrequency range. Specified @ 12.5 V, 175 MHz CharacteristicsOutput Power = 1.5 W1.5 W, 175 MHzMinimum Gain = 11.5 dBRF LOW POWEREfficiency 60% (Typ)TRANSISTOR Cost Effe
mrf553re.pdf
MOTOROLAOrder this documentSEMICONDUCTOR TECHNICAL DATAby MRF553/DThe RF LineNPN SiliconMRF553RF Low Power TransistorDesigned primarily for wideband large signal predriver stages in the VHFfrequency range. Specified @ 12.5 V, 175 MHz CharacteristicsOutput Power = 1.5 W1.5 W, 175 MHzMinimum Gain = 11.5 dBRF LOW POWEREfficiency 60% (Typ)TRANSISTOR Cost Effe
mrf559re.pdf
MOTOROLAOrder this documentSEMICONDUCTOR TECHNICAL DATAby MRF559/DThe RF LineNPN SiliconMRF559High-Frequency Transistor. . . designed for UHF linear and largesignal amplifier applications. Specified 12.5 Volt, 870 MHz Characteristics Output Power = 0.5 WattsMinimum Gain = 8.0 dB0.5 W, 870 MHzEfficiency 50%HIGHFREQUENCY S Parameter Data From 250 MHz t
mrf559.pdf
MOTOROLAOrder this documentSEMICONDUCTOR TECHNICAL DATAby MRF559/DThe RF LineNPN SiliconMRF559High-Frequency Transistor. . . designed for UHF linear and largesignal amplifier applications. Specified 12.5 Volt, 870 MHz Characteristics Output Power = 0.5 WattsMinimum Gain = 8.0 dB0.5 W, 870 MHzEfficiency 50%HIGHFREQUENCY S Parameter Data From 250 MHz t
mrf555.pdf
MOTOROLAOrder this documentSEMICONDUCTOR TECHNICAL DATAby MRF555/DThe RF LineNPN SiliconMRF555RF Low Power TransistorDesigned primarily for wideband large signal predriver stages in the UHFfrequency range. Specified @ 12.5 V, 470 MHz Characteristics @ Pout = 1.5 WCommon Emitter Power Gain = 12.5 dB (Typ)1.5 W, 470 MHzEfficiency 60% (Typ)RF LOW POWER Cost Effe
Datasheet: 2N3200 , 2N3201 , 2N3202 , 2N3203 , 2N3204 , 2N3205 , 2N3206 , 2N3207 , B772 , 2N3209 , 2N3209AQF , 2N3209CSM , 2N3209DCSM , 2N3209L , 2N321 , 2N3210 , 2N3211 .
