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MRF559 . Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: MRF559
   Material: Si
   Polaridad de transistor: NPN

ESPECIFICACIONES MÁXIMAS


   Disipación total del dispositivo (Pc): 2 W
   Tensión colector-base (Vcb): 36 V
   Tensión colector-emisor (Vce): 16 V
   Tensión emisor-base (Veb): 3 V
   Corriente del colector DC máxima (Ic): 0.15 A
   Temperatura operativa máxima (Tj): 150 °C

CARACTERÍSTICAS ELÉCTRICAS


   Transición de frecuencia (ft): 3000(typ) MHz
   Capacitancia de salida (Cc): 2 pF
   Ganancia de corriente contínua (hfe): 30
   Paquete / Cubierta: CASE317-01
 

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MRF559 Datasheet (PDF)

 ..1. Size:124K  motorola
 mrf559.pdf pdf_icon

MRF559

MOTOROLAOrder this documentSEMICONDUCTOR TECHNICAL DATAby MRF559/DThe RF LineNPN SiliconMRF559High-Frequency Transistor. . . designed for UHF linear and largesignal amplifier applications. Specified 12.5 Volt, 870 MHz Characteristics Output Power = 0.5 WattsMinimum Gain = 8.0 dB0.5 W, 870 MHzEfficiency 50%HIGHFREQUENCY S Parameter Data From 250 MHz t

 0.1. Size:157K  motorola
 mrf559re.pdf pdf_icon

MRF559

MOTOROLAOrder this documentSEMICONDUCTOR TECHNICAL DATAby MRF559/DThe RF LineNPN SiliconMRF559High-Frequency Transistor. . . designed for UHF linear and largesignal amplifier applications. Specified 12.5 Volt, 870 MHz Characteristics Output Power = 0.5 WattsMinimum Gain = 8.0 dB0.5 W, 870 MHzEfficiency 50%HIGHFREQUENCY S Parameter Data From 250 MHz t

 9.1. Size:91K  motorola
 mrf557re.pdf pdf_icon

MRF559

MOTOROLAOrder this documentSEMICONDUCTOR TECHNICAL DATAby MRF557/DThe RF LineNPN SiliconMRF557RF Low Power TransistorDesigned primarily for wideband large signal predriver stages in the800 MHz frequency range. Specified @ 12.5 V, 870 MHz CharacteristicsOutput Power = 1.5 W1.5 W, 870 MHzMinimum Gain = 8.0 dBRF LOW POWEREfficiency 60% (Typ)TRANSISTOR Cost E

 9.2. Size:99K  motorola
 mrf555re.pdf pdf_icon

MRF559

MOTOROLAOrder this documentSEMICONDUCTOR TECHNICAL DATAby MRF555/DThe RF LineNPN SiliconMRF555RF Low Power TransistorDesigned primarily for wideband large signal predriver stages in the UHFfrequency range. Specified @ 12.5 V, 470 MHz Characteristics @ Pout = 1.5 WCommon Emitter Power Gain = 12.5 dB (Typ)1.5 W, 470 MHzEfficiency 60% (Typ)RF LOW POWER Cost Effe

MOSTRAR MÁS

Otros transistores... MRF3104 , MRF3105 , MRF3106 , MRF338 , MRF4427R2 , MRF553 , MRF557 , MRF5583 , TIP41C , MRF5812 , MRF5811LT1 , MRF5943 , MRF6402 , MRF6404 , MRF6404K , MRF6408 , MRF6409 .

History: 2PB710AS | MP8523 | KSD1616A-G | CI3391A | MMBT9015-C | 3DD153 | FCS9015B

 

 
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