MRF559 - Даташиты. Аналоги. Основные параметры

MOTOROLA Order this document SEMICONDUCTOR TECHNICAL DATA by MRF559/D The RF Line NPN Silicon MRF559 High-Frequency Transistor . . . designed for UHF linear and large signal amplifier applications. Specified 12.5 Volt, 870 MHz Characteristics Output Power = 0.5 Watts Minimum Gain = 8.0 dB 0.5 W, 870 MHz Efficiency 50% HIGH FREQUENCY S Parameter Data From 250 MHz t

MOTOROLA Order this document SEMICONDUCTOR TECHNICAL DATA by MRF559/D The RF Line NPN Silicon MRF559 High-Frequency Transistor . . . designed for UHF linear and large signal amplifier applications. Specified 12.5 Volt, 870 MHz Characteristics Output Power = 0.5 Watts Minimum Gain = 8.0 dB 0.5 W, 870 MHz Efficiency 50% HIGH FREQUENCY S Parameter Data From 250 MHz t

MOTOROLA Order this document SEMICONDUCTOR TECHNICAL DATA by MRF557/D The RF Line NPN Silicon MRF557 RF Low Power Transistor Designed primarily for wideband large signal predriver stages in the 800 MHz frequency range. Specified @ 12.5 V, 870 MHz Characteristics Output Power = 1.5 W 1.5 W, 870 MHz Minimum Gain = 8.0 dB RF LOW POWER Efficiency 60% (Typ) TRANSISTOR Cost E

MOTOROLA Order this document SEMICONDUCTOR TECHNICAL DATA by MRF555/D The RF Line NPN Silicon MRF555 RF Low Power Transistor Designed primarily for wideband large signal predriver stages in the UHF frequency range. Specified @ 12.5 V, 470 MHz Characteristics @ Pout = 1.5 W Common Emitter Power Gain = 12.5 dB (Typ) 1.5 W, 470 MHz Efficiency 60% (Typ) RF LOW POWER Cost Effe

MOTOROLA Order this document SEMICONDUCTOR TECHNICAL DATA by MRF557/D The RF Line NPN Silicon MRF557 RF Low Power Transistor Designed primarily for wideband large signal predriver stages in the 800 MHz frequency range. Specified @ 12.5 V, 870 MHz Characteristics Output Power = 1.5 W 1.5 W, 870 MHz Minimum Gain = 8.0 dB RF LOW POWER Efficiency 60% (Typ) TRANSISTOR Cost E

MOTOROLA Order this document SEMICONDUCTOR TECHNICAL DATA by MRF553/D The RF Line NPN Silicon MRF553 RF Low Power Transistor Designed primarily for wideband large signal predriver stages in the VHF frequency range. Specified @ 12.5 V, 175 MHz Characteristics Output Power = 1.5 W 1.5 W, 175 MHz Minimum Gain = 11.5 dB RF LOW POWER Efficiency 60% (Typ) TRANSISTOR Cost Effe

MOTOROLA Order this document SEMICONDUCTOR TECHNICAL DATA by MRF553/D The RF Line NPN Silicon MRF553 RF Low Power Transistor Designed primarily for wideband large signal predriver stages in the VHF frequency range. Specified @ 12.5 V, 175 MHz Characteristics Output Power = 1.5 W 1.5 W, 175 MHz Minimum Gain = 11.5 dB RF LOW POWER Efficiency 60% (Typ) TRANSISTOR Cost Effe

MOTOROLA Order this document SEMICONDUCTOR TECHNICAL DATA by MRF5583/D The RF Line PNP Silicon MRF5583 High-Frequency Transistor . . . designed for amplifier, oscillator or frequency multiplier applications in industrial equipment. Suitable for use as a Class A, B or C output driver or pre driver stages in VHF and UHF. Low Cost SORF Plastic Surface Mount Package IC = 500 mA

MOTOROLA Order this document SEMICONDUCTOR TECHNICAL DATA by MRF555/D The RF Line NPN Silicon MRF555 RF Low Power Transistor Designed primarily for wideband large signal predriver stages in the UHF frequency range. Specified @ 12.5 V, 470 MHz Characteristics @ Pout = 1.5 W Common Emitter Power Gain = 12.5 dB (Typ) 1.5 W, 470 MHz Efficiency 60% (Typ) RF LOW POWER Cost Effe

MOTOROLA Order this document SEMICONDUCTOR TECHNICAL DATA by MRF5583/D The RF Line PNP Silicon MRF5583 High-Frequency Transistor . . . designed for amplifier, oscillator or frequency multiplier applications in industrial equipment. Suitable for use as a Class A, B or C output driver or pre driver stages in VHF and UHF. Low Cost SORF Plastic Surface Mount Package IC = 500 mA