MOTOROLAOrder this documentSEMICONDUCTOR TECHNICAL DATAby MRF559/DThe RF LineNPN SiliconMRF559High-Frequency Transistor. . . designed for UHF linear and largesignal amplifier applications. Specified 12.5 Volt, 870 MHz Characteristics Output Power = 0.5 WattsMinimum Gain = 8.0 dB0.5 W, 870 MHzEfficiency 50%HIGHFREQUENCY S Parameter Data From 250 MHz t

MOTOROLAOrder this documentSEMICONDUCTOR TECHNICAL DATAby MRF559/DThe RF LineNPN SiliconMRF559High-Frequency Transistor. . . designed for UHF linear and largesignal amplifier applications. Specified 12.5 Volt, 870 MHz Characteristics Output Power = 0.5 WattsMinimum Gain = 8.0 dB0.5 W, 870 MHzEfficiency 50%HIGHFREQUENCY S Parameter Data From 250 MHz t

MOTOROLAOrder this documentSEMICONDUCTOR TECHNICAL DATAby MRF557/DThe RF LineNPN SiliconMRF557RF Low Power TransistorDesigned primarily for wideband large signal predriver stages in the800 MHz frequency range. Specified @ 12.5 V, 870 MHz CharacteristicsOutput Power = 1.5 W1.5 W, 870 MHzMinimum Gain = 8.0 dBRF LOW POWEREfficiency 60% (Typ)TRANSISTOR Cost E

MOTOROLAOrder this documentSEMICONDUCTOR TECHNICAL DATAby MRF555/DThe RF LineNPN SiliconMRF555RF Low Power TransistorDesigned primarily for wideband large signal predriver stages in the UHFfrequency range. Specified @ 12.5 V, 470 MHz Characteristics @ Pout = 1.5 WCommon Emitter Power Gain = 12.5 dB (Typ)1.5 W, 470 MHzEfficiency 60% (Typ)RF LOW POWER Cost Effe

MOTOROLAOrder this documentSEMICONDUCTOR TECHNICAL DATAby MRF557/DThe RF LineNPN SiliconMRF557RF Low Power TransistorDesigned primarily for wideband large signal predriver stages in the800 MHz frequency range. Specified @ 12.5 V, 870 MHz CharacteristicsOutput Power = 1.5 W1.5 W, 870 MHzMinimum Gain = 8.0 dBRF LOW POWEREfficiency 60% (Typ)TRANSISTOR Cost E

MOTOROLAOrder this documentSEMICONDUCTOR TECHNICAL DATAby MRF553/DThe RF LineNPN SiliconMRF553RF Low Power TransistorDesigned primarily for wideband large signal predriver stages in the VHFfrequency range. Specified @ 12.5 V, 175 MHz CharacteristicsOutput Power = 1.5 W1.5 W, 175 MHzMinimum Gain = 11.5 dBRF LOW POWEREfficiency 60% (Typ)TRANSISTOR Cost Effe

MOTOROLAOrder this documentSEMICONDUCTOR TECHNICAL DATAby MRF553/DThe RF LineNPN SiliconMRF553RF Low Power TransistorDesigned primarily for wideband large signal predriver stages in the VHFfrequency range. Specified @ 12.5 V, 175 MHz CharacteristicsOutput Power = 1.5 W1.5 W, 175 MHzMinimum Gain = 11.5 dBRF LOW POWEREfficiency 60% (Typ)TRANSISTOR Cost Effe

MOTOROLAOrder this documentSEMICONDUCTOR TECHNICAL DATAby MRF5583/DThe RF LinePNP SiliconMRF5583High-Frequency Transistor. . . designed for amplifier, oscillator or frequency multiplier applications inindustrial equipment. Suitable for use as a Class A, B or C output driver orpredriver stages in VHF and UHF. Low Cost SORF Plastic Surface Mount PackageIC = 500 mA

MOTOROLAOrder this documentSEMICONDUCTOR TECHNICAL DATAby MRF555/DThe RF LineNPN SiliconMRF555RF Low Power TransistorDesigned primarily for wideband large signal predriver stages in the UHFfrequency range. Specified @ 12.5 V, 470 MHz Characteristics @ Pout = 1.5 WCommon Emitter Power Gain = 12.5 dB (Typ)1.5 W, 470 MHzEfficiency 60% (Typ)RF LOW POWER Cost Effe

MOTOROLAOrder this documentSEMICONDUCTOR TECHNICAL DATAby MRF5583/DThe RF LinePNP SiliconMRF5583High-Frequency Transistor. . . designed for amplifier, oscillator or frequency multiplier applications inindustrial equipment. Suitable for use as a Class A, B or C output driver orpredriver stages in VHF and UHF. Low Cost SORF Plastic Surface Mount PackageIC = 500 mA