MRF559 Datasheet. Specs and Replacement

Type Designator: MRF559  📄📄 

Material of Transistor: Si

Polarity: NPN

Absolute Maximum Ratings

Maximum Collector Power Dissipation (Pc): 2 W

Maximum Collector-Base Voltage |Vcb|: 36 V

Maximum Collector-Emitter Voltage |Vce|: 16 V

Maximum Emitter-Base Voltage |Veb|: 3 V

Maximum Collector Current |Ic max|: 0.15 A

Max. Operating Junction Temperature (Tj): 150 °C

Electrical Characteristics

Transition Frequency (ft): 3000 typ MHz

Collector Capacitance (Cc): 2 pF

Forward Current Transfer Ratio (hFE), MIN: 30

Noise Figure, dB: -

Package: CASE317-01

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MRF559 datasheet

 ..1. Size:124K  motorola

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MRF559

MOTOROLA Order this document SEMICONDUCTOR TECHNICAL DATA by MRF559/D The RF Line NPN Silicon MRF559 High-Frequency Transistor . . . designed for UHF linear and large signal amplifier applications. Specified 12.5 Volt, 870 MHz Characteristics Output Power = 0.5 Watts Minimum Gain = 8.0 dB 0.5 W, 870 MHz Efficiency 50% HIGH FREQUENCY S Parameter Data From 250 MHz t... See More ⇒

 0.1. Size:157K  motorola

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MRF559

MOTOROLA Order this document SEMICONDUCTOR TECHNICAL DATA by MRF559/D The RF Line NPN Silicon MRF559 High-Frequency Transistor . . . designed for UHF linear and large signal amplifier applications. Specified 12.5 Volt, 870 MHz Characteristics Output Power = 0.5 Watts Minimum Gain = 8.0 dB 0.5 W, 870 MHz Efficiency 50% HIGH FREQUENCY S Parameter Data From 250 MHz t... See More ⇒

 9.1. Size:91K  motorola

mrf557re.pdf pdf_icon

MRF559

MOTOROLA Order this document SEMICONDUCTOR TECHNICAL DATA by MRF557/D The RF Line NPN Silicon MRF557 RF Low Power Transistor Designed primarily for wideband large signal predriver stages in the 800 MHz frequency range. Specified @ 12.5 V, 870 MHz Characteristics Output Power = 1.5 W 1.5 W, 870 MHz Minimum Gain = 8.0 dB RF LOW POWER Efficiency 60% (Typ) TRANSISTOR Cost E... See More ⇒

 9.2. Size:99K  motorola

mrf555re.pdf pdf_icon

MRF559

MOTOROLA Order this document SEMICONDUCTOR TECHNICAL DATA by MRF555/D The RF Line NPN Silicon MRF555 RF Low Power Transistor Designed primarily for wideband large signal predriver stages in the UHF frequency range. Specified @ 12.5 V, 470 MHz Characteristics @ Pout = 1.5 W Common Emitter Power Gain = 12.5 dB (Typ) 1.5 W, 470 MHz Efficiency 60% (Typ) RF LOW POWER Cost Effe... See More ⇒

Detailed specifications: MRF3104, MRF3105, MRF3106, MRF338, MRF4427R2, MRF553, MRF557, MRF5583, BC547, MRF5812, MRF5811LT1, MRF5943, MRF6402, MRF6404, MRF6404K, MRF6408, MRF6409

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