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MRF5812 . Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: MRF5812
   Código: 5812
   Material: Si
   Polaridad de transistor: NPN

ESPECIFICACIONES MÁXIMAS


   Disipación total del dispositivo (Pc): 1.67 W
   Tensión colector-base (Vcb): 30 V
   Tensión colector-emisor (Vce): 15 V
   Tensión emisor-base (Veb): 2.5 V
   Corriente del colector DC máxima (Ic): 0.2 A
   Temperatura operativa máxima (Tj): 150 °C

CARACTERÍSTICAS ELÉCTRICAS


   Transición de frecuencia (ft): 5500(typ) MHz
   Capacitancia de salida (Cc): 1.2 pF
   Ganancia de corriente contínua (hfe): 30
   Paquete / Cubierta: SO8
 

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MRF5812 Datasheet (PDF)

 ..1. Size:222K  motorola
 mrf581 mrf581a mrf5812.pdf pdf_icon

MRF5812

MOTOROLAOrder this documentSEMICONDUCTOR TECHNICAL DATAby MRF581/DThe RF LineMRF581NPN SiliconMRF581AHigh-Frequency TransistorsMRF5812, R1, R2Designed for high current low power amplifiers up to 1.0 GHz. Low Noise (2.0 dB @ 500 MHz) Low Intermodulation DistortionIC = 200 mA High GainLOW NOISE StateoftheArt TechnologyHIGHFREQUENCYFine L

 8.1. Size:155K  motorola
 mrf5811lt1.pdf pdf_icon

MRF5812

MOTOROLAOrder this documentSEMICONDUCTOR TECHNICAL DATAby MRF5811LT1/DThe RF LineMRF5811LT1NPN SiliconHigh-Frequency TransistorDesigned for high current, low power amplifiers up to 1.0 GHz.IC = 200 mA Low Noise (2.0 dB @ 500 MHz) LOW NOISEHIGHFREQUENCY Low Intermodulation DistortionTRANSISTOR High GainNPN SILICON StateoftheArt Technology

 8.2. Size:222K  motorola
 mrf581re.pdf pdf_icon

MRF5812

MOTOROLAOrder this documentSEMICONDUCTOR TECHNICAL DATAby MRF581/DThe RF LineMRF581NPN SiliconMRF581AHigh-Frequency TransistorsMRF5812, R1, R2Designed for high current low power amplifiers up to 1.0 GHz. Low Noise (2.0 dB @ 500 MHz) Low Intermodulation DistortionIC = 200 mA High GainLOW NOISE StateoftheArt TechnologyHIGHFREQUENCYFine L

 8.3. Size:155K  motorola
 mrf5811l.pdf pdf_icon

MRF5812

MOTOROLAOrder this documentSEMICONDUCTOR TECHNICAL DATAby MRF5811LT1/DThe RF LineMRF5811LT1NPN SiliconHigh-Frequency TransistorDesigned for high current, low power amplifiers up to 1.0 GHz.IC = 200 mA Low Noise (2.0 dB @ 500 MHz) LOW NOISEHIGHFREQUENCY Low Intermodulation DistortionTRANSISTOR High GainNPN SILICON StateoftheArt Technology

MOSTRAR MÁS

Otros transistores... 2N3192 , 2N3193 , 2N3194 , 2N3195 , 2N3196 , 2N3197 , 2N3198 , 2N3199 , 2SC4793 , 2N320 , 2N3200 , 2N3201 , 2N3202 , 2N3203 , 2N3204 , 2N3205 , 2N3206 .

History: 2SC6096 | 2SC5584 | SQ2222AF | 2SC6144 | 40613 | BF200 | KT930B

 

 
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