MRF5812 Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: MRF5812

Código: 5812

Material: Si

Polaridad de transistor: NPN

ESPECIFICACIONES MÁXIMAS

Disipación total del dispositivo (Pc): 1.67 W

Tensión colector-base (Vcb): 30 V

Tensión colector-emisor (Vce): 15 V

Tensión emisor-base (Veb): 2.5 V

Corriente del colector DC máxima (Ic): 0.2 A

Temperatura operativa máxima (Tj): 150 °C

CARACTERÍSTICAS ELÉCTRICAS

Transición de frecuencia (fT): 5500 typ MHz

Capacitancia de salida (Cc): 1.2 pF

Ganancia de corriente contínua (hFE): 30

Encapsulados: SO8

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MRF5812 datasheet

 ..1. Size:222K  motorola
 mrf581 mrf581a mrf5812.pdf pdf_icon

MRF5812

MOTOROLA Order this document SEMICONDUCTOR TECHNICAL DATA by MRF581/D The RF Line MRF581 NPN Silicon MRF581A High-Frequency Transistors MRF5812, R1, R2 Designed for high current low power amplifiers up to 1.0 GHz. Low Noise (2.0 dB @ 500 MHz) Low Intermodulation Distortion IC = 200 mA High Gain LOW NOISE State of the Art Technology HIGH FREQUENCY Fine L

 8.1. Size:155K  motorola
 mrf5811lt1.pdf pdf_icon

MRF5812

MOTOROLA Order this document SEMICONDUCTOR TECHNICAL DATA by MRF5811LT1/D The RF Line MRF5811LT1 NPN Silicon High-Frequency Transistor Designed for high current, low power amplifiers up to 1.0 GHz. IC = 200 mA Low Noise (2.0 dB @ 500 MHz) LOW NOISE HIGH FREQUENCY Low Intermodulation Distortion TRANSISTOR High Gain NPN SILICON State of the Art Technology

 8.2. Size:222K  motorola
 mrf581re.pdf pdf_icon

MRF5812

MOTOROLA Order this document SEMICONDUCTOR TECHNICAL DATA by MRF581/D The RF Line MRF581 NPN Silicon MRF581A High-Frequency Transistors MRF5812, R1, R2 Designed for high current low power amplifiers up to 1.0 GHz. Low Noise (2.0 dB @ 500 MHz) Low Intermodulation Distortion IC = 200 mA High Gain LOW NOISE State of the Art Technology HIGH FREQUENCY Fine L

 8.3. Size:155K  motorola
 mrf5811l.pdf pdf_icon

MRF5812

MOTOROLA Order this document SEMICONDUCTOR TECHNICAL DATA by MRF5811LT1/D The RF Line MRF5811LT1 NPN Silicon High-Frequency Transistor Designed for high current, low power amplifiers up to 1.0 GHz. IC = 200 mA Low Noise (2.0 dB @ 500 MHz) LOW NOISE HIGH FREQUENCY Low Intermodulation Distortion TRANSISTOR High Gain NPN SILICON State of the Art Technology

MOSTRAR MÁS

Otros transistores... MRF3105, MRF3106, MRF338, MRF4427R2, MRF553, MRF557, MRF5583, MRF559, 2SC5200, MRF5811LT1, MRF5943, MRF6402, MRF6404, MRF6404K, MRF6408, MRF6409, MRF653S