All Transistors. MRF5812 Datasheet

 

MRF5812 Datasheet and Replacement


   Type Designator: MRF5812
   SMD Transistor Code: 5812
   Material of Transistor: Si
   Polarity: NPN
   Maximum Collector Power Dissipation (Pc): 1.67 W
   Maximum Collector-Base Voltage |Vcb|: 30 V
   Maximum Collector-Emitter Voltage |Vce|: 15 V
   Maximum Emitter-Base Voltage |Veb|: 2.5 V
   Maximum Collector Current |Ic max|: 0.2 A
   Max. Operating Junction Temperature (Tj): 150 °C
   Transition Frequency (ft): 5500(typ) MHz
   Collector Capacitance (Cc): 1.2 pF
   Forward Current Transfer Ratio (hFE), MIN: 30
   Noise Figure, dB: -
   Package: SO8
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MRF5812 Datasheet (PDF)

 ..1. Size:222K  motorola
 mrf581 mrf581a mrf5812.pdf pdf_icon

MRF5812

MOTOROLAOrder this documentSEMICONDUCTOR TECHNICAL DATAby MRF581/DThe RF LineMRF581NPN SiliconMRF581AHigh-Frequency TransistorsMRF5812, R1, R2Designed for high current low power amplifiers up to 1.0 GHz. Low Noise (2.0 dB @ 500 MHz) Low Intermodulation DistortionIC = 200 mA High GainLOW NOISE StateoftheArt TechnologyHIGHFREQUENCYFine L

 8.1. Size:155K  motorola
 mrf5811lt1.pdf pdf_icon

MRF5812

MOTOROLAOrder this documentSEMICONDUCTOR TECHNICAL DATAby MRF5811LT1/DThe RF LineMRF5811LT1NPN SiliconHigh-Frequency TransistorDesigned for high current, low power amplifiers up to 1.0 GHz.IC = 200 mA Low Noise (2.0 dB @ 500 MHz) LOW NOISEHIGHFREQUENCY Low Intermodulation DistortionTRANSISTOR High GainNPN SILICON StateoftheArt Technology

 8.2. Size:222K  motorola
 mrf581re.pdf pdf_icon

MRF5812

MOTOROLAOrder this documentSEMICONDUCTOR TECHNICAL DATAby MRF581/DThe RF LineMRF581NPN SiliconMRF581AHigh-Frequency TransistorsMRF5812, R1, R2Designed for high current low power amplifiers up to 1.0 GHz. Low Noise (2.0 dB @ 500 MHz) Low Intermodulation DistortionIC = 200 mA High GainLOW NOISE StateoftheArt TechnologyHIGHFREQUENCYFine L

 8.3. Size:155K  motorola
 mrf5811l.pdf pdf_icon

MRF5812

MOTOROLAOrder this documentSEMICONDUCTOR TECHNICAL DATAby MRF5811LT1/DThe RF LineMRF5811LT1NPN SiliconHigh-Frequency TransistorDesigned for high current, low power amplifiers up to 1.0 GHz.IC = 200 mA Low Noise (2.0 dB @ 500 MHz) LOW NOISEHIGHFREQUENCY Low Intermodulation DistortionTRANSISTOR High GainNPN SILICON StateoftheArt Technology

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Datasheet: 2N3200 , 2N3201 , 2N3202 , 2N3203 , 2N3204 , 2N3205 , 2N3206 , 2N3207 , B772 , 2N3209 , 2N3209AQF , 2N3209CSM , 2N3209DCSM , 2N3209L , 2N321 , 2N3210 , 2N3211 .

History: 2STX2220 | MCH3245 | TTD1410B

Keywords - MRF5812 transistor datasheet

 MRF5812 cross reference
 MRF5812 equivalent finder
 MRF5812 lookup
 MRF5812 substitution
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