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MRF5811LT1 . Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: MRF5811LT1
   Código: 20
   Material: Si
   Polaridad de transistor: NPN

ESPECIFICACIONES MÁXIMAS


   Disipación total del dispositivo (Pc): 0.71 W
   Tensión colector-base (Vcb): 36 V
   Tensión colector-emisor (Vce): 18 V
   Tensión emisor-base (Veb): 2.5 V
   Corriente del colector DC máxima (Ic): 0.2 A
   Temperatura operativa máxima (Tj): 150 °C

CARACTERÍSTICAS ELÉCTRICAS


   Transición de frecuencia (ft): 5000(typ) MHz
   Capacitancia de salida (Cc): 2 pF
   Ganancia de corriente contínua (hfe): 50
   Paquete / Cubierta: CASE318A-05
 

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MRF5811LT1 Datasheet (PDF)

 ..1. Size:155K  motorola
 mrf5811lt1.pdf pdf_icon

MRF5811LT1

MOTOROLAOrder this documentSEMICONDUCTOR TECHNICAL DATAby MRF5811LT1/DThe RF LineMRF5811LT1NPN SiliconHigh-Frequency TransistorDesigned for high current, low power amplifiers up to 1.0 GHz.IC = 200 mA Low Noise (2.0 dB @ 500 MHz) LOW NOISEHIGHFREQUENCY Low Intermodulation DistortionTRANSISTOR High GainNPN SILICON StateoftheArt Technology

 6.1. Size:155K  motorola
 mrf5811l.pdf pdf_icon

MRF5811LT1

MOTOROLAOrder this documentSEMICONDUCTOR TECHNICAL DATAby MRF5811LT1/DThe RF LineMRF5811LT1NPN SiliconHigh-Frequency TransistorDesigned for high current, low power amplifiers up to 1.0 GHz.IC = 200 mA Low Noise (2.0 dB @ 500 MHz) LOW NOISEHIGHFREQUENCY Low Intermodulation DistortionTRANSISTOR High GainNPN SILICON StateoftheArt Technology

 8.1. Size:222K  motorola
 mrf581re.pdf pdf_icon

MRF5811LT1

MOTOROLAOrder this documentSEMICONDUCTOR TECHNICAL DATAby MRF581/DThe RF LineMRF581NPN SiliconMRF581AHigh-Frequency TransistorsMRF5812, R1, R2Designed for high current low power amplifiers up to 1.0 GHz. Low Noise (2.0 dB @ 500 MHz) Low Intermodulation DistortionIC = 200 mA High GainLOW NOISE StateoftheArt TechnologyHIGHFREQUENCYFine L

 8.2. Size:222K  motorola
 mrf581 mrf581a mrf5812.pdf pdf_icon

MRF5811LT1

MOTOROLAOrder this documentSEMICONDUCTOR TECHNICAL DATAby MRF581/DThe RF LineMRF581NPN SiliconMRF581AHigh-Frequency TransistorsMRF5812, R1, R2Designed for high current low power amplifiers up to 1.0 GHz. Low Noise (2.0 dB @ 500 MHz) Low Intermodulation DistortionIC = 200 mA High GainLOW NOISE StateoftheArt TechnologyHIGHFREQUENCYFine L

MOSTRAR MÁS

Otros transistores... MRF3106 , MRF338 , MRF4427R2 , MRF553 , MRF557 , MRF5583 , MRF559 , MRF5812 , C945 , MRF5943 , MRF6402 , MRF6404 , MRF6404K , MRF6408 , MRF6409 , MRF653S , MRF837 .

History: KT333G-3 | FZT955

 

 
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