MRF5811LT1 Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: MRF5811LT1

Código: 20

Material: Si

Polaridad de transistor: NPN

ESPECIFICACIONES MÁXIMAS

Disipación total del dispositivo (Pc): 0.71 W

Tensión colector-base (Vcb): 36 V

Tensión colector-emisor (Vce): 18 V

Tensión emisor-base (Veb): 2.5 V

Corriente del colector DC máxima (Ic): 0.2 A

Temperatura operativa máxima (Tj): 150 °C

CARACTERÍSTICAS ELÉCTRICAS

Transición de frecuencia (fT): 5000 typ MHz

Capacitancia de salida (Cc): 2 pF

Ganancia de corriente contínua (hFE): 50

Encapsulados: CASE318A-05

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MRF5811LT1 datasheet

 ..1. Size:155K  motorola
 mrf5811lt1.pdf pdf_icon

MRF5811LT1

MOTOROLA Order this document SEMICONDUCTOR TECHNICAL DATA by MRF5811LT1/D The RF Line MRF5811LT1 NPN Silicon High-Frequency Transistor Designed for high current, low power amplifiers up to 1.0 GHz. IC = 200 mA Low Noise (2.0 dB @ 500 MHz) LOW NOISE HIGH FREQUENCY Low Intermodulation Distortion TRANSISTOR High Gain NPN SILICON State of the Art Technology

 6.1. Size:155K  motorola
 mrf5811l.pdf pdf_icon

MRF5811LT1

MOTOROLA Order this document SEMICONDUCTOR TECHNICAL DATA by MRF5811LT1/D The RF Line MRF5811LT1 NPN Silicon High-Frequency Transistor Designed for high current, low power amplifiers up to 1.0 GHz. IC = 200 mA Low Noise (2.0 dB @ 500 MHz) LOW NOISE HIGH FREQUENCY Low Intermodulation Distortion TRANSISTOR High Gain NPN SILICON State of the Art Technology

 8.1. Size:222K  motorola
 mrf581re.pdf pdf_icon

MRF5811LT1

MOTOROLA Order this document SEMICONDUCTOR TECHNICAL DATA by MRF581/D The RF Line MRF581 NPN Silicon MRF581A High-Frequency Transistors MRF5812, R1, R2 Designed for high current low power amplifiers up to 1.0 GHz. Low Noise (2.0 dB @ 500 MHz) Low Intermodulation Distortion IC = 200 mA High Gain LOW NOISE State of the Art Technology HIGH FREQUENCY Fine L

 8.2. Size:222K  motorola
 mrf581 mrf581a mrf5812.pdf pdf_icon

MRF5811LT1

MOTOROLA Order this document SEMICONDUCTOR TECHNICAL DATA by MRF581/D The RF Line MRF581 NPN Silicon MRF581A High-Frequency Transistors MRF5812, R1, R2 Designed for high current low power amplifiers up to 1.0 GHz. Low Noise (2.0 dB @ 500 MHz) Low Intermodulation Distortion IC = 200 mA High Gain LOW NOISE State of the Art Technology HIGH FREQUENCY Fine L

MOSTRAR MÁS

Otros transistores... MRF3106, MRF338, MRF4427R2, MRF553, MRF557, MRF5583, MRF559, MRF5812, TIP41C, MRF5943, MRF6402, MRF6404, MRF6404K, MRF6408, MRF6409, MRF653S, MRF837