All Transistors. MRF5811LT1 Datasheet

 

MRF5811LT1 Datasheet and Replacement


   Type Designator: MRF5811LT1
   SMD Transistor Code: 20
   Material of Transistor: Si
   Polarity: NPN
   Maximum Collector Power Dissipation (Pc): 0.71 W
   Maximum Collector-Base Voltage |Vcb|: 36 V
   Maximum Collector-Emitter Voltage |Vce|: 18 V
   Maximum Emitter-Base Voltage |Veb|: 2.5 V
   Maximum Collector Current |Ic max|: 0.2 A
   Max. Operating Junction Temperature (Tj): 150 °C
   Transition Frequency (ft): 5000(typ) MHz
   Collector Capacitance (Cc): 2 pF
   Forward Current Transfer Ratio (hFE), MIN: 50
   Noise Figure, dB: -
   Package: CASE318A-05

 MRF5811LT1 Transistor Equivalent Substitute - Cross-Reference Search

   

MRF5811LT1 Datasheet (PDF)

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MRF5811LT1

MOTOROLA Order this document SEMICONDUCTOR TECHNICAL DATA by MRF5811LT1/D The RF Line MRF5811LT1 NPN Silicon High-Frequency Transistor Designed for high current, low power amplifiers up to 1.0 GHz. IC = 200 mA Low Noise (2.0 dB @ 500 MHz) LOW NOISE HIGH FREQUENCY Low Intermodulation Distortion TRANSISTOR High Gain NPN SILICON State of the Art Technology ... See More ⇒

 6.1. Size:155K  motorola
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MRF5811LT1

MOTOROLA Order this document SEMICONDUCTOR TECHNICAL DATA by MRF5811LT1/D The RF Line MRF5811LT1 NPN Silicon High-Frequency Transistor Designed for high current, low power amplifiers up to 1.0 GHz. IC = 200 mA Low Noise (2.0 dB @ 500 MHz) LOW NOISE HIGH FREQUENCY Low Intermodulation Distortion TRANSISTOR High Gain NPN SILICON State of the Art Technology ... See More ⇒

 8.1. Size:222K  motorola
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MRF5811LT1

MOTOROLA Order this document SEMICONDUCTOR TECHNICAL DATA by MRF581/D The RF Line MRF581 NPN Silicon MRF581A High-Frequency Transistors MRF5812, R1, R2 Designed for high current low power amplifiers up to 1.0 GHz. Low Noise (2.0 dB @ 500 MHz) Low Intermodulation Distortion IC = 200 mA High Gain LOW NOISE State of the Art Technology HIGH FREQUENCY Fine L... See More ⇒

 8.2. Size:222K  motorola
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MRF5811LT1

MOTOROLA Order this document SEMICONDUCTOR TECHNICAL DATA by MRF581/D The RF Line MRF581 NPN Silicon MRF581A High-Frequency Transistors MRF5812, R1, R2 Designed for high current low power amplifiers up to 1.0 GHz. Low Noise (2.0 dB @ 500 MHz) Low Intermodulation Distortion IC = 200 mA High Gain LOW NOISE State of the Art Technology HIGH FREQUENCY Fine L... See More ⇒

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Datasheet: MRF3106 , MRF338 , MRF4427R2 , MRF553 , MRF557 , MRF5583 , MRF559 , MRF5812 , TIP41C , MRF5943 , MRF6402 , MRF6404 , MRF6404K , MRF6408 , MRF6409 , MRF653S , MRF837 .

History: BCX70JLT1 | KT8297A | KT8304A-5 | BFP420

Keywords - MRF5811LT1 transistor datasheet

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