MRF6404 . Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

MOTOROLA Order this document SEMICONDUCTOR TECHNICAL DATA by MRF6404/D The RF Line MRF6404 NPN Silicon RF Power Transistor The MRF6404 is designed for 26 volts microwave large signal, common emitter, class AB linear amplifier applications operating in the range 1.8 to 30 W, 1.88 GHz 2.0 GHz. RF POWER TRANSISTOR Specified 26 Volts, 1.88 GHz Characteristics NPN SILICON Output Po

MOTOROLA Order this document SEMICONDUCTOR TECHNICAL DATA by MRF6404/D The RF Line MRF6404 NPN Silicon MRF6404K RF Power Transistor The MRF6404 is designed for 26 volts microwave large signal, common emitter, class AB linear amplifier applications operating in the range 1.8 to 30 W, 1.88 GHz 2.0 GHz. RF POWER TRANSISTOR Specified 26 Volts, 1.88 GHz Characteristics NPN SILICON

MOTOROLA Order this document SEMICONDUCTOR TECHNICAL DATA by MRF6404/D The RF Line MRF6404 NPN Silicon MRF6404K RF Power Transistor The MRF6404 is designed for 26 volts microwave large signal, common emitter, class AB linear amplifier applications operating in the range 1.8 to 30 W, 1.88 GHz 2.0 GHz. RF POWER TRANSISTOR Specified 26 Volts, 1.88 GHz Characteristics NPN SILICON

MOTOROLA Order this document SEMICONDUCTOR TECHNICAL DATA by MRF6404/D The RF Line MRF6404 NPN Silicon RF Power Transistor The MRF6404 is designed for 26 volts microwave large signal, common emitter, class AB linear amplifier applications operating in the range 1.8 to 30 W, 1.88 GHz 2.0 GHz. RF POWER TRANSISTOR Specified 26 Volts, 1.88 GHz Characteristics NPN SILICON Output Po

MOTOROLA Order this document SEMICONDUCTOR TECHNICAL DATA by MRF6402/D The RF Line NPN Silicon MRF6402 RF Power Transistor The MRF6402 is designed for 1.8 GHz Personal Communications Network (PCN) base stations applications. It incorporates high value emitter ballast resistors, gold metallizations and offers a high degree of reliability and ruggedness. For ease of design, this transi

MOTOROLA Order this document SEMICONDUCTOR TECHNICAL DATA by MRF6402/D The RF Line NPN Silicon MRF6402 RF Power Transistor The MRF6402 is designed for 1.8 GHz Personal Communications Network (PCN) base stations applications. It incorporates high value emitter ballast resistors, gold metallizations and offers a high degree of reliability and ruggedness. For ease of design, this transi

MOTOROLA Order this document SEMICONDUCTOR TECHNICAL DATA by MRF6401/D The RF Line NPN Silicon MRF6401 RF Power Transistor The MRF6401 is designed for Class A common emitter, linear power amplifiers in the 1.0 2.0 GHz frequency range. It has been specifically designed for use in Personal Communications Network (PCN) base station and INMARSAT Standard M applications. Specifie

MOTOROLA Order this document SEMICONDUCTOR TECHNICAL DATA by MRF6401PHT/D The RF Line NPN Silicon MRF6401 RF Power Transistor PHOTOMASTER CASE 305C 02, STYLE 1 SOE200 PILL R4 R5 R6 + VCC R7 Q1 R8 R2 R3 C9 C10 C4 C3 TL11 TL10 C5 C6 C7 C8 TL6 TL4 C2 TL5 TL7 TL9 RF TL1 TL2 OUTPUT RF TP1 INPUT C1 DUT TL8 TL3 TL4 C1 1.5 pF, ATC Chip Capacitor 100A Q1 Tran

MOTOROLA Order this document SEMICONDUCTOR TECHNICAL DATA by MRF6409/D The RF Line NPN Silicon MRF6409 RF Power Transistor The MRF6409 is designed for GSM base stations applications. It incorpo- rates high value emitter ballast resistors, gold metallizations and offers a high degree of reliability and ruggedness. To be used in Class AB Specified 26 Volts, 960 MHz Characteris

MOTOROLA Order this document SEMICONDUCTOR TECHNICAL DATA by MRF6402/D The RF Line NPN Silicon MRF6402 RF Power Transistor The MRF6402 is designed for 1.8 GHz Personal Communications Network (PCN) base stations applications. It incorporates high value emitter ballast resistors, gold metallizations and offers a high degree of reliability and ruggedness. For ease of design, this transi

MOTOROLA Order this document SEMICONDUCTOR TECHNICAL DATA by MRF6409/D The RF Line NPN Silicon MRF6409 RF Power Transistor The MRF6409 is designed for GSM base stations applications. It incorpo- rates high value emitter ballast resistors, gold metallizations and offers a high degree of reliability and ruggedness. To be used in Class AB Specified 26 Volts, 960 MHz Characteris