MRF6404 Datasheet. Specs and Replacement
Type Designator: MRF6404 📄📄
Material of Transistor: Si
Polarity: NPN
Absolute Maximum Ratings
Maximum Collector Power Dissipation (Pc): 125 W
Maximum Collector-Base Voltage |Vcb|: 60 V
Maximum Collector-Emitter Voltage |Vce|: 24 V
Maximum Emitter-Base Voltage |Veb|: 4 V
Maximum Collector Current |Ic max|: 10 A
Max. Operating Junction Temperature (Tj): 200 °C
Electrical Characteristics
Transition Frequency (ft): 1880 MHz
Collector Capacitance (Cc): 38 pF
Forward Current Transfer Ratio (hFE), MIN: 20
Package: CASE395C-01
📄📄 Copy
MRF6404 Substitution
- BJT ⓘ Cross-Reference Search
MRF6404 datasheet
MOTOROLA Order this document SEMICONDUCTOR TECHNICAL DATA by MRF6404/D The RF Line MRF6404 NPN Silicon RF Power Transistor The MRF6404 is designed for 26 volts microwave large signal, common emitter, class AB linear amplifier applications operating in the range 1.8 to 30 W, 1.88 GHz 2.0 GHz. RF POWER TRANSISTOR Specified 26 Volts, 1.88 GHz Characteristics NPN SILICON Output Po... See More ⇒
MOTOROLA Order this document SEMICONDUCTOR TECHNICAL DATA by MRF6404/D The RF Line MRF6404 NPN Silicon MRF6404K RF Power Transistor The MRF6404 is designed for 26 volts microwave large signal, common emitter, class AB linear amplifier applications operating in the range 1.8 to 30 W, 1.88 GHz 2.0 GHz. RF POWER TRANSISTOR Specified 26 Volts, 1.88 GHz Characteristics NPN SILICON ... See More ⇒
MOTOROLA Order this document SEMICONDUCTOR TECHNICAL DATA by MRF6404/D The RF Line MRF6404 NPN Silicon MRF6404K RF Power Transistor The MRF6404 is designed for 26 volts microwave large signal, common emitter, class AB linear amplifier applications operating in the range 1.8 to 30 W, 1.88 GHz 2.0 GHz. RF POWER TRANSISTOR Specified 26 Volts, 1.88 GHz Characteristics NPN SILICON ... See More ⇒
MOTOROLA Order this document SEMICONDUCTOR TECHNICAL DATA by MRF6404/D The RF Line MRF6404 NPN Silicon RF Power Transistor The MRF6404 is designed for 26 volts microwave large signal, common emitter, class AB linear amplifier applications operating in the range 1.8 to 30 W, 1.88 GHz 2.0 GHz. RF POWER TRANSISTOR Specified 26 Volts, 1.88 GHz Characteristics NPN SILICON Output Po... See More ⇒
Detailed specifications: MRF553, MRF557, MRF5583, MRF559, MRF5812, MRF5811LT1, MRF5943, MRF6402, 2N2222, MRF6404K, MRF6408, MRF6409, MRF653S, MRF837, MRF8372R1, MRF8372R2, MRF847
Keywords - MRF6404 pdf specs
MRF6404 cross reference
MRF6404 equivalent finder
MRF6404 pdf lookup
MRF6404 substitution
MRF6404 replacement
BJT Parameters and How They Relate
History: NSS40300 | KRA766U | RN1426 | LX8050QLT1G | BUY56-4 | 2N306 | RN2411
🌐 : EN ES РУ
LIST
Last Update
BJT: ZDT6705 | GA1L4Z | GA1A4M | SBT42 | 2SA200-Y | 2SA200-O
Popular searches
k3569 mosfet equivalent | 2sa1370 | 4508nh mosfet | a94 transistor | c5149 datasheet | m1830m mosfet | pkch2bb mosfet | 2024ont














