MRF6409 Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: MRF6409

Material: Si

Polaridad de transistor: NPN

ESPECIFICACIONES MÁXIMAS

Disipación total del dispositivo (Pc): 45 W

Tensión colector-base (Vcb): 55 V

Tensión colector-emisor (Vce): 24 V

Tensión emisor-base (Veb): 4 V

Corriente del colector DC máxima (Ic): 5 A

Temperatura operativa máxima (Tj): 200 °C

CARACTERÍSTICAS ELÉCTRICAS

Transición de frecuencia (fT): 960 MHz

Capacitancia de salida (Cc): 18 pF

Ganancia de corriente contínua (hFE): 20

Encapsulados: CASE319-07

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MRF6409 datasheet

 ..1. Size:273K  motorola
mrf6409.pdf pdf_icon

MRF6409

MOTOROLA Order this document SEMICONDUCTOR TECHNICAL DATA by MRF6409/D The RF Line NPN Silicon MRF6409 RF Power Transistor The MRF6409 is designed for GSM base stations applications. It incorpo- rates high value emitter ballast resistors, gold metallizations and offers a high degree of reliability and ruggedness. To be used in Class AB Specified 26 Volts, 960 MHz Characteris

 0.1. Size:273K  motorola
mrf6409rev0.pdf pdf_icon

MRF6409

MOTOROLA Order this document SEMICONDUCTOR TECHNICAL DATA by MRF6409/D The RF Line NPN Silicon MRF6409 RF Power Transistor The MRF6409 is designed for GSM base stations applications. It incorpo- rates high value emitter ballast resistors, gold metallizations and offers a high degree of reliability and ruggedness. To be used in Class AB Specified 26 Volts, 960 MHz Characteris

 8.1. Size:120K  motorola
mrf6402.pdf pdf_icon

MRF6409

MOTOROLA Order this document SEMICONDUCTOR TECHNICAL DATA by MRF6402/D The RF Line NPN Silicon MRF6402 RF Power Transistor The MRF6402 is designed for 1.8 GHz Personal Communications Network (PCN) base stations applications. It incorporates high value emitter ballast resistors, gold metallizations and offers a high degree of reliability and ruggedness. For ease of design, this transi

 8.2. Size:153K  motorola
mrf6402rev7.pdf pdf_icon

MRF6409

MOTOROLA Order this document SEMICONDUCTOR TECHNICAL DATA by MRF6402/D The RF Line NPN Silicon MRF6402 RF Power Transistor The MRF6402 is designed for 1.8 GHz Personal Communications Network (PCN) base stations applications. It incorporates high value emitter ballast resistors, gold metallizations and offers a high degree of reliability and ruggedness. For ease of design, this transi

Otros transistores... MRF559, MRF5812, MRF5811LT1, MRF5943, MRF6402, MRF6404, MRF6404K, MRF6408, C1815, MRF653S, MRF837, MRF8372R1, MRF8372R2, MRF847, MRF857, MRF858, MRF858S