MRF6409 Datasheet and Replacement
Type Designator: MRF6409
Material of Transistor: Si
Polarity: NPN
Maximum Collector Power Dissipation (Pc): 45
W
Maximum Collector-Base Voltage |Vcb|: 55
V
Maximum Collector-Emitter Voltage |Vce|: 24
V
Maximum Emitter-Base Voltage |Veb|: 4
V
Maximum Collector Current |Ic max|: 5
A
Max. Operating Junction Temperature (Tj): 200
°C
Transition Frequency (ft): 960
MHz
Collector Capacitance (Cc): 18
pF
Forward Current Transfer Ratio (hFE), MIN: 20
Noise Figure, dB: -
Package: CASE319-07
-
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MRF6409 Datasheet (PDF)
..1. Size:273K motorola
mrf6409.pdf 
MOTOROLAOrder this documentSEMICONDUCTOR TECHNICAL DATAby MRF6409/DThe RF LineNPN SiliconMRF6409RF Power TransistorThe MRF6409 is designed for GSM base stations applications. It incorpo-rates high value emitter ballast resistors, gold metallizations and offers a highdegree of reliability and ruggedness. To be used in Class AB Specified 26 Volts, 960 MHz Characteris
0.1. Size:273K motorola
mrf6409rev0.pdf
MOTOROLAOrder this documentSEMICONDUCTOR TECHNICAL DATAby MRF6409/DThe RF LineNPN SiliconMRF6409RF Power TransistorThe MRF6409 is designed for GSM base stations applications. It incorpo-rates high value emitter ballast resistors, gold metallizations and offers a highdegree of reliability and ruggedness. To be used in Class AB Specified 26 Volts, 960 MHz Characteris
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mrf6402.pdf
MOTOROLAOrder this documentSEMICONDUCTOR TECHNICAL DATAby MRF6402/DThe RF LineNPN SiliconMRF6402RF Power TransistorThe MRF6402 is designed for 1.8 GHz Personal Communications Network(PCN) base stations applications. It incorporates high value emitter ballastresistors, gold metallizations and offers a high degree of reliability andruggedness. For ease of design, this transi
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mrf6402rev7.pdf
MOTOROLAOrder this documentSEMICONDUCTOR TECHNICAL DATAby MRF6402/DThe RF LineNPN SiliconMRF6402RF Power TransistorThe MRF6402 is designed for 1.8 GHz Personal Communications Network(PCN) base stations applications. It incorporates high value emitter ballastresistors, gold metallizations and offers a high degree of reliability andruggedness. For ease of design, this transi
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mrf6404rev2.pdf
MOTOROLAOrder this documentSEMICONDUCTOR TECHNICAL DATAby MRF6404/DThe RF LineMRF6404NPN SiliconMRF6404KRF Power TransistorThe MRF6404 is designed for 26 volts microwave large signal, commonemitter, class AB linear amplifier applications operating in the range 1.8 to30 W, 1.88 GHz2.0 GHz.RF POWER TRANSISTOR Specified 26 Volts, 1.88 GHz Characteristics NPN SILICON
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mrf6408r.pdf
MOTOROLAOrder this documentSEMICONDUCTOR TECHNICAL DATAby MRF6408/DThe RF LineMRF6408NPN SiliconRF Power TransistorDesigned for PCN and PCS base station applications, the MRF6408incorporates high value emitter ballast resistors, gold metallizations and offers12 W, 2.0 GHza high degree of reliability and ruggedness.RF POWER TRANSISTOR To be used in class AB for PCN
8.5. Size:268K motorola
mrf6408.pdf
MOTOROLAOrder this documentSEMICONDUCTOR TECHNICAL DATAby MRF6408/DThe RF LineMRF6408NPN SiliconRF Power TransistorDesigned for PCN and PCS base station applications, the MRF6408incorporates high value emitter ballast resistors, gold metallizations and offers12 W, 2.0 GHza high degree of reliability and ruggedness.RF POWER TRANSISTOR To be used in class AB for PCN
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mrf6401r.pdf
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mrf6408rev2.pdf
MOTOROLAOrder this documentSEMICONDUCTOR TECHNICAL DATAby MRF6408/DThe RF LineMRF6408NPN SiliconRF Power TransistorDesigned for PCN and PCS base station applications, the MRF6408incorporates high value emitter ballast resistors, gold metallizations and offers12 W, 2.0 GHza high degree of reliability and ruggedness.RF POWER TRANSISTOR To be used in class AB for PCN
8.8. Size:228K motorola
mrf6404.pdf
MOTOROLAOrder this documentSEMICONDUCTOR TECHNICAL DATAby MRF6404/DThe RF LineMRF6404NPN SiliconRF Power TransistorThe MRF6404 is designed for 26 volts microwave large signal, commonemitter, class AB linear amplifier applications operating in the range 1.8 to30 W, 1.88 GHz2.0 GHz.RF POWER TRANSISTOR Specified 26 Volts, 1.88 GHz Characteristics NPN SILICONOutput Po
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mrf6401p.pdf
MOTOROLAOrder this documentSEMICONDUCTOR TECHNICAL DATAby MRF6401PHT/DThe RF LineNPN SiliconMRF6401RF Power TransistorPHOTOMASTERCASE 305C02, STYLE 1SOE200PILLR4 R5 R6+VCCR7Q1R8R2 R3C9C10C4 C3 TL11TL10C5 C6 C7 C8TL6TL4C2TL5 TL7 TL9RFTL1 TL2OUTPUTRFTP1INPUTC1DUT TL8TL3 TL4C1 1.5 pF, ATC Chip Capacitor 100A Q1 Tran
8.10. Size:228K motorola
mrf6404r.pdf
MOTOROLAOrder this documentSEMICONDUCTOR TECHNICAL DATAby MRF6404/DThe RF LineMRF6404NPN SiliconRF Power TransistorThe MRF6404 is designed for 26 volts microwave large signal, commonemitter, class AB linear amplifier applications operating in the range 1.8 to30 W, 1.88 GHz2.0 GHz.RF POWER TRANSISTOR Specified 26 Volts, 1.88 GHz Characteristics NPN SILICONOutput Po
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mrf6404 mrf6404k.pdf
MOTOROLAOrder this documentSEMICONDUCTOR TECHNICAL DATAby MRF6404/DThe RF LineMRF6404NPN SiliconMRF6404KRF Power TransistorThe MRF6404 is designed for 26 volts microwave large signal, commonemitter, class AB linear amplifier applications operating in the range 1.8 to30 W, 1.88 GHz2.0 GHz.RF POWER TRANSISTOR Specified 26 Volts, 1.88 GHz Characteristics NPN SILICON
8.12. Size:120K motorola
mrf6402r.pdf
MOTOROLAOrder this documentSEMICONDUCTOR TECHNICAL DATAby MRF6402/DThe RF LineNPN SiliconMRF6402RF Power TransistorThe MRF6402 is designed for 1.8 GHz Personal Communications Network(PCN) base stations applications. It incorporates high value emitter ballastresistors, gold metallizations and offers a high degree of reliability andruggedness. For ease of design, this transi
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