MRF653S Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: MRF653S

Material: Si

Polaridad de transistor: NPN

ESPECIFICACIONES MÁXIMAS

Disipación total del dispositivo (Pc): 44 W

Tensión colector-base (Vcb): 38 V

Tensión colector-emisor (Vce): 16.5 V

Tensión emisor-base (Veb): 4 V

Corriente del colector DC máxima (Ic): 2.75 A

Temperatura operativa máxima (Tj): 200 °C

CARACTERÍSTICAS ELÉCTRICAS

Transición de frecuencia (fT): 512 MHz

Capacitancia de salida (Cc): 22 pF

Ganancia de corriente contínua (hFE): 20

Encapsulados: CASE249-06

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MRF653S datasheet

 ..1. Size:123K  motorola
 mrf653 mrf653s.pdf pdf_icon

MRF653S

MOTOROLA Order this document SEMICONDUCTOR TECHNICAL DATA by MRF653/D The RF Line NPN Silicon MRF653 RF Power Transistors MRF653S Designed for 12.5 Volt UHF large signal amplifier applications in industrial and commercial FM equipment operating to 512 MHz. Specified 12.5 Volt, 512 MHz Characteristics Output Power = 10 W 10 W, 512 MHz Gain = 8.0 dB (Typ) RF POWER Efficiency

 8.1. Size:163K  motorola
 mrf653.pdf pdf_icon

MRF653S

MOTOROLA Order this document SEMICONDUCTOR TECHNICAL DATA by MRF653/D The RF Line NPN Silicon MRF653 RF Power Transistor Designed for 12.5 Volt UHF large signal amplifier applications in industrial and commercial FM equipment operating to 512 MHz. Specified 12.5 Volt, 512 MHz Characteristics Output Power = 10 W 10 W, 512 MHz Gain = 8.0 dB (Typ) RF POWER Efficiency = 65% (Ty

 8.2. Size:163K  motorola
 mrf653rev8.pdf pdf_icon

MRF653S

MOTOROLA Order this document SEMICONDUCTOR TECHNICAL DATA by MRF653/D The RF Line NPN Silicon MRF653 RF Power Transistor Designed for 12.5 Volt UHF large signal amplifier applications in industrial and commercial FM equipment operating to 512 MHz. Specified 12.5 Volt, 512 MHz Characteristics Output Power = 10 W 10 W, 512 MHz Gain = 8.0 dB (Typ) RF POWER Efficiency = 65% (Ty

 8.3. Size:123K  motorola
 mrf653re.pdf pdf_icon

MRF653S

MOTOROLA Order this document SEMICONDUCTOR TECHNICAL DATA by MRF653/D The RF Line NPN Silicon MRF653 RF Power Transistors MRF653S Designed for 12.5 Volt UHF large signal amplifier applications in industrial and commercial FM equipment operating to 512 MHz. Specified 12.5 Volt, 512 MHz Characteristics Output Power = 10 W 10 W, 512 MHz Gain = 8.0 dB (Typ) RF POWER Efficiency

MOSTRAR MÁS

Otros transistores... MRF5812, MRF5811LT1, MRF5943, MRF6402, MRF6404, MRF6404K, MRF6408, MRF6409, 2N5401, MRF837, MRF8372R1, MRF8372R2, MRF847, MRF857, MRF858, MRF858S, MRF859