MRF653S . Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: MRF653S
Material: Si
Polaridad de transistor: NPN
ESPECIFICACIONES MÁXIMAS
Disipación total del dispositivo (Pc): 44 W
Tensión colector-base (Vcb): 38 V
Tensión colector-emisor (Vce): 16.5 V
Tensión emisor-base (Veb): 4 V
Corriente del colector DC máxima (Ic): 2.75 A
Temperatura operativa máxima (Tj): 200 °C
CARACTERÍSTICAS ELÉCTRICAS
Transición de frecuencia (ft): 512 MHz
Capacitancia de salida (Cc): 22 pF
Ganancia de corriente contínua (hfe): 20
Paquete / Cubierta: CASE249-06
Búsqueda de reemplazo de MRF653S
MRF653S Datasheet (PDF)
mrf653 mrf653s.pdf
MOTOROLAOrder this documentSEMICONDUCTOR TECHNICAL DATAby MRF653/DThe RF LineNPN SiliconMRF653RF Power TransistorsMRF653SDesigned for 12.5 Volt UHF largesignal amplifier applications in industrialand commercial FM equipment operating to 512 MHz. Specified 12.5 Volt, 512 MHz CharacteristicsOutput Power = 10 W10 W, 512 MHzGain = 8.0 dB (Typ)RF POWEREfficiency
mrf653.pdf
MOTOROLAOrder this documentSEMICONDUCTOR TECHNICAL DATAby MRF653/DThe RF LineNPN SiliconMRF653RF Power TransistorDesigned for 12.5 Volt UHF largesignal amplifier applications in industrialand commercial FM equipment operating to 512 MHz. Specified 12.5 Volt, 512 MHz CharacteristicsOutput Power = 10 W10 W, 512 MHzGain = 8.0 dB (Typ)RF POWEREfficiency = 65% (Ty
mrf653rev8.pdf
MOTOROLAOrder this documentSEMICONDUCTOR TECHNICAL DATAby MRF653/DThe RF LineNPN SiliconMRF653RF Power TransistorDesigned for 12.5 Volt UHF largesignal amplifier applications in industrialand commercial FM equipment operating to 512 MHz. Specified 12.5 Volt, 512 MHz CharacteristicsOutput Power = 10 W10 W, 512 MHzGain = 8.0 dB (Typ)RF POWEREfficiency = 65% (Ty
mrf653re.pdf
MOTOROLAOrder this documentSEMICONDUCTOR TECHNICAL DATAby MRF653/DThe RF LineNPN SiliconMRF653RF Power TransistorsMRF653SDesigned for 12.5 Volt UHF largesignal amplifier applications in industrialand commercial FM equipment operating to 512 MHz. Specified 12.5 Volt, 512 MHz CharacteristicsOutput Power = 10 W10 W, 512 MHzGain = 8.0 dB (Typ)RF POWEREfficiency
Otros transistores... MRF5812 , MRF5811LT1 , MRF5943 , MRF6402 , MRF6404 , MRF6404K , MRF6408 , MRF6409 , TIP41 , MRF837 , MRF8372R1 , MRF8372R2 , MRF847 , MRF857 , MRF858 , MRF858S , MRF859 .
History: BDX55 | MJW16206 | 3DD4617H-V | 2SD1977 | TA2510 | 2SA15H | KT837T1-IM
History: BDX55 | MJW16206 | 3DD4617H-V | 2SD1977 | TA2510 | 2SA15H | KT837T1-IM
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