MRF653S . Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: MRF653S
Material: Si
Polaridad de transistor: NPN
ESPECIFICACIONES MÁXIMAS
Disipación total del dispositivo (Pc): 44 W
Tensión colector-base (Vcb): 38 V
Tensión colector-emisor (Vce): 16.5 V
Tensión emisor-base (Veb): 4 V
Corriente del colector DC máxima (Ic): 2.75 A
Temperatura operativa máxima (Tj): 200 °C
CARACTERÍSTICAS ELÉCTRICAS
Transición de frecuencia (ft): 512 MHz
Capacitancia de salida (Cc): 22 pF
Ganancia de corriente contínua (hfe): 20
Paquete / Cubierta: CASE249-06
Búsqueda de reemplazo de MRF653S
MRF653S Datasheet (PDF)
mrf653 mrf653s.pdf

MOTOROLAOrder this documentSEMICONDUCTOR TECHNICAL DATAby MRF653/DThe RF LineNPN SiliconMRF653RF Power TransistorsMRF653SDesigned for 12.5 Volt UHF largesignal amplifier applications in industrialand commercial FM equipment operating to 512 MHz. Specified 12.5 Volt, 512 MHz CharacteristicsOutput Power = 10 W10 W, 512 MHzGain = 8.0 dB (Typ)RF POWEREfficiency
mrf653.pdf

MOTOROLAOrder this documentSEMICONDUCTOR TECHNICAL DATAby MRF653/DThe RF LineNPN SiliconMRF653RF Power TransistorDesigned for 12.5 Volt UHF largesignal amplifier applications in industrialand commercial FM equipment operating to 512 MHz. Specified 12.5 Volt, 512 MHz CharacteristicsOutput Power = 10 W10 W, 512 MHzGain = 8.0 dB (Typ)RF POWEREfficiency = 65% (Ty
mrf653rev8.pdf

MOTOROLAOrder this documentSEMICONDUCTOR TECHNICAL DATAby MRF653/DThe RF LineNPN SiliconMRF653RF Power TransistorDesigned for 12.5 Volt UHF largesignal amplifier applications in industrialand commercial FM equipment operating to 512 MHz. Specified 12.5 Volt, 512 MHz CharacteristicsOutput Power = 10 W10 W, 512 MHzGain = 8.0 dB (Typ)RF POWEREfficiency = 65% (Ty
mrf653re.pdf

MOTOROLAOrder this documentSEMICONDUCTOR TECHNICAL DATAby MRF653/DThe RF LineNPN SiliconMRF653RF Power TransistorsMRF653SDesigned for 12.5 Volt UHF largesignal amplifier applications in industrialand commercial FM equipment operating to 512 MHz. Specified 12.5 Volt, 512 MHz CharacteristicsOutput Power = 10 W10 W, 512 MHzGain = 8.0 dB (Typ)RF POWEREfficiency
Otros transistores... 2N3200 , 2N3201 , 2N3202 , 2N3203 , 2N3204 , 2N3205 , 2N3206 , 2N3207 , BC546 , 2N3209 , 2N3209AQF , 2N3209CSM , 2N3209DCSM , 2N3209L , 2N321 , 2N3210 , 2N3211 .
History: MP4355 | UNR521E



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