MRF653S Datasheet, Equivalent, Cross Reference Search
Type Designator: MRF653S
Material of Transistor: Si
Polarity: NPN
Maximum Collector Power Dissipation (Pc): 44 W
Maximum Collector-Base Voltage |Vcb|: 38 V
Maximum Collector-Emitter Voltage |Vce|: 16.5 V
Maximum Emitter-Base Voltage |Veb|: 4 V
Maximum Collector Current |Ic max|: 2.75 A
Max. Operating Junction Temperature (Tj): 200 °C
Transition Frequency (ft): 512 MHz
Collector Capacitance (Cc): 22 pF
Forward Current Transfer Ratio (hFE), MIN: 20
Noise Figure, dB: -
Package: CASE249-06
MRF653S Transistor Equivalent Substitute - Cross-Reference Search
MRF653S Datasheet (PDF)
mrf653 mrf653s.pdf
MOTOROLAOrder this documentSEMICONDUCTOR TECHNICAL DATAby MRF653/DThe RF LineNPN SiliconMRF653RF Power TransistorsMRF653SDesigned for 12.5 Volt UHF largesignal amplifier applications in industrialand commercial FM equipment operating to 512 MHz. Specified 12.5 Volt, 512 MHz CharacteristicsOutput Power = 10 W10 W, 512 MHzGain = 8.0 dB (Typ)RF POWEREfficiency
mrf653.pdf
MOTOROLAOrder this documentSEMICONDUCTOR TECHNICAL DATAby MRF653/DThe RF LineNPN SiliconMRF653RF Power TransistorDesigned for 12.5 Volt UHF largesignal amplifier applications in industrialand commercial FM equipment operating to 512 MHz. Specified 12.5 Volt, 512 MHz CharacteristicsOutput Power = 10 W10 W, 512 MHzGain = 8.0 dB (Typ)RF POWEREfficiency = 65% (Ty
mrf653rev8.pdf
MOTOROLAOrder this documentSEMICONDUCTOR TECHNICAL DATAby MRF653/DThe RF LineNPN SiliconMRF653RF Power TransistorDesigned for 12.5 Volt UHF largesignal amplifier applications in industrialand commercial FM equipment operating to 512 MHz. Specified 12.5 Volt, 512 MHz CharacteristicsOutput Power = 10 W10 W, 512 MHzGain = 8.0 dB (Typ)RF POWEREfficiency = 65% (Ty
mrf653re.pdf
MOTOROLAOrder this documentSEMICONDUCTOR TECHNICAL DATAby MRF653/DThe RF LineNPN SiliconMRF653RF Power TransistorsMRF653SDesigned for 12.5 Volt UHF largesignal amplifier applications in industrialand commercial FM equipment operating to 512 MHz. Specified 12.5 Volt, 512 MHz CharacteristicsOutput Power = 10 W10 W, 512 MHzGain = 8.0 dB (Typ)RF POWEREfficiency
mrf653.pdf
HG RF POWER TRANSISTORMRF653SemiconductorsHGROHS Compliance,Silicon NPN POWER TRANSISTORDesigned for 12.5 Volt UHF largesignal amplifier applications in industrialand commercial FM equipment operating to 512 MHz. Specified 12.5 Volt, 512 MHz CharacteristicsOutput Power = 10 WGain = 8.0 dB (Typ)Efficiency = 65% (Typ) Gold Metallized, Emitter Ballasted for Long Life a
Datasheet: 2SA1801 , 2SA1802 , 2SA1802A , 2SA1803 , 2SA1803O , 2SA1803R , 2SA1804 , 2SA1804O , BD777 , 2SA1805 , 2SA1805O , 2SA1805R , 2SA1806 , 2SA181 , 2SA1810 , 2SA1810B , 2SA1810C .
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