MRF653S Datasheet PDF and Replacements, Transistor Equivalent Finder, Cross Reference

MRF653S Datasheet. Specs and Replacement

Type Designator: MRF653S 📄📄

Material of Transistor: Si

Polarity: NPN

Absolute Maximum Ratings

Maximum Collector Power Dissipation (Pc): 44 W

Maximum Collector-Base Voltage |Vcb|: 38 V

Maximum Collector-Emitter Voltage |Vce|: 16.5 V

Maximum Emitter-Base Voltage |Veb|: 4 V

Maximum Collector Current |Ic max|: 2.75 A

Max. Operating Junction Temperature (Tj): 200 °C

Electrical Characteristics

Transition Frequency (ft): 512 MHz

Collector Capacitance (Cc): 22 pF

Forward Current Transfer Ratio (hFE), MIN: 20

Noise Figure, dB: -

Package: CASE249-06

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MRF653S Substitution

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MRF653S datasheet

..1. Size:123K motorola

mrf653 mrf653s.pdf pdf_icon

MOTOROLA Order this document SEMICONDUCTOR TECHNICAL DATA by MRF653/D The RF Line NPN Silicon MRF653 RF Power Transistors MRF653S Designed for 12.5 Volt UHF large signal amplifier applications in industrial and commercial FM equipment operating to 512 MHz. Specified 12.5 Volt, 512 MHz Characteristics Output Power = 10 W 10 W, 512 MHz Gain = 8.0 dB (Typ) RF POWER Efficiency... See More ⇒

8.1. Size:163K motorola

mrf653.pdf pdf_icon

MOTOROLA Order this document SEMICONDUCTOR TECHNICAL DATA by MRF653/D The RF Line NPN Silicon MRF653 RF Power Transistor Designed for 12.5 Volt UHF large signal amplifier applications in industrial and commercial FM equipment operating to 512 MHz. Specified 12.5 Volt, 512 MHz Characteristics Output Power = 10 W 10 W, 512 MHz Gain = 8.0 dB (Typ) RF POWER Efficiency = 65% (Ty... See More ⇒

8.2. Size:163K motorola

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