All Transistors. MRF653S Datasheet

 

MRF653S Datasheet and Replacement


   Type Designator: MRF653S
   Material of Transistor: Si
   Polarity: NPN
   Maximum Collector Power Dissipation (Pc): 44 W
   Maximum Collector-Base Voltage |Vcb|: 38 V
   Maximum Collector-Emitter Voltage |Vce|: 16.5 V
   Maximum Emitter-Base Voltage |Veb|: 4 V
   Maximum Collector Current |Ic max|: 2.75 A
   Max. Operating Junction Temperature (Tj): 200 °C
   Transition Frequency (ft): 512 MHz
   Collector Capacitance (Cc): 22 pF
   Forward Current Transfer Ratio (hFE), MIN: 20
   Noise Figure, dB: -
   Package: CASE249-06
 

 MRF653S Substitution

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MRF653S Datasheet (PDF)

 ..1. Size:123K  motorola
mrf653 mrf653s.pdf pdf_icon

MRF653S

MOTOROLAOrder this documentSEMICONDUCTOR TECHNICAL DATAby MRF653/DThe RF LineNPN SiliconMRF653RF Power TransistorsMRF653SDesigned for 12.5 Volt UHF largesignal amplifier applications in industrialand commercial FM equipment operating to 512 MHz. Specified 12.5 Volt, 512 MHz CharacteristicsOutput Power = 10 W10 W, 512 MHzGain = 8.0 dB (Typ)RF POWEREfficiency

 8.1. Size:163K  motorola
mrf653.pdf pdf_icon

MRF653S

MOTOROLAOrder this documentSEMICONDUCTOR TECHNICAL DATAby MRF653/DThe RF LineNPN SiliconMRF653RF Power TransistorDesigned for 12.5 Volt UHF largesignal amplifier applications in industrialand commercial FM equipment operating to 512 MHz. Specified 12.5 Volt, 512 MHz CharacteristicsOutput Power = 10 W10 W, 512 MHzGain = 8.0 dB (Typ)RF POWEREfficiency = 65% (Ty

 8.2. Size:163K  motorola
mrf653rev8.pdf pdf_icon

MRF653S

MOTOROLAOrder this documentSEMICONDUCTOR TECHNICAL DATAby MRF653/DThe RF LineNPN SiliconMRF653RF Power TransistorDesigned for 12.5 Volt UHF largesignal amplifier applications in industrialand commercial FM equipment operating to 512 MHz. Specified 12.5 Volt, 512 MHz CharacteristicsOutput Power = 10 W10 W, 512 MHzGain = 8.0 dB (Typ)RF POWEREfficiency = 65% (Ty

 8.3. Size:123K  motorola
mrf653re.pdf pdf_icon

MRF653S

MOTOROLAOrder this documentSEMICONDUCTOR TECHNICAL DATAby MRF653/DThe RF LineNPN SiliconMRF653RF Power TransistorsMRF653SDesigned for 12.5 Volt UHF largesignal amplifier applications in industrialand commercial FM equipment operating to 512 MHz. Specified 12.5 Volt, 512 MHz CharacteristicsOutput Power = 10 W10 W, 512 MHzGain = 8.0 dB (Typ)RF POWEREfficiency

Datasheet: MRF5812 , MRF5811LT1 , MRF5943 , MRF6402 , MRF6404 , MRF6404K , MRF6408 , MRF6409 , TIP41 , MRF837 , MRF8372R1 , MRF8372R2 , MRF847 , MRF857 , MRF858 , MRF858S , MRF859 .

Keywords - MRF653S transistor datasheet

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