All Transistors. MRF653S Datasheet

 

MRF653S Datasheet and Replacement


   Type Designator: MRF653S
   Material of Transistor: Si
   Polarity: NPN
   Maximum Collector Power Dissipation (Pc): 44 W
   Maximum Collector-Base Voltage |Vcb|: 38 V
   Maximum Collector-Emitter Voltage |Vce|: 16.5 V
   Maximum Emitter-Base Voltage |Veb|: 4 V
   Maximum Collector Current |Ic max|: 2.75 A
   Max. Operating Junction Temperature (Tj): 200 °C
   Transition Frequency (ft): 512 MHz
   Collector Capacitance (Cc): 22 pF
   Forward Current Transfer Ratio (hFE), MIN: 20
   Noise Figure, dB: -
   Package: CASE249-06

 MRF653S Transistor Equivalent Substitute - Cross-Reference Search

   

MRF653S Datasheet (PDF)

 ..1. Size:123K  motorola
 mrf653 mrf653s.pdf pdf_icon

MRF653S

MOTOROLA Order this document SEMICONDUCTOR TECHNICAL DATA by MRF653/D The RF Line NPN Silicon MRF653 RF Power Transistors MRF653S Designed for 12.5 Volt UHF large signal amplifier applications in industrial and commercial FM equipment operating to 512 MHz. Specified 12.5 Volt, 512 MHz Characteristics Output Power = 10 W 10 W, 512 MHz Gain = 8.0 dB (Typ) RF POWER Efficiency... See More ⇒

 8.1. Size:163K  motorola
 mrf653.pdf pdf_icon

MRF653S

MOTOROLA Order this document SEMICONDUCTOR TECHNICAL DATA by MRF653/D The RF Line NPN Silicon MRF653 RF Power Transistor Designed for 12.5 Volt UHF large signal amplifier applications in industrial and commercial FM equipment operating to 512 MHz. Specified 12.5 Volt, 512 MHz Characteristics Output Power = 10 W 10 W, 512 MHz Gain = 8.0 dB (Typ) RF POWER Efficiency = 65% (Ty... See More ⇒

 8.2. Size:163K  motorola
 mrf653rev8.pdf pdf_icon

MRF653S

MOTOROLA Order this document SEMICONDUCTOR TECHNICAL DATA by MRF653/D The RF Line NPN Silicon MRF653 RF Power Transistor Designed for 12.5 Volt UHF large signal amplifier applications in industrial and commercial FM equipment operating to 512 MHz. Specified 12.5 Volt, 512 MHz Characteristics Output Power = 10 W 10 W, 512 MHz Gain = 8.0 dB (Typ) RF POWER Efficiency = 65% (Ty... See More ⇒

 8.3. Size:123K  motorola
 mrf653re.pdf pdf_icon

MRF653S

MOTOROLA Order this document SEMICONDUCTOR TECHNICAL DATA by MRF653/D The RF Line NPN Silicon MRF653 RF Power Transistors MRF653S Designed for 12.5 Volt UHF large signal amplifier applications in industrial and commercial FM equipment operating to 512 MHz. Specified 12.5 Volt, 512 MHz Characteristics Output Power = 10 W 10 W, 512 MHz Gain = 8.0 dB (Typ) RF POWER Efficiency... See More ⇒

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Datasheet: MRF5812 , MRF5811LT1 , MRF5943 , MRF6402 , MRF6404 , MRF6404K , MRF6408 , MRF6409 , 2N5401 , MRF837 , MRF8372R1 , MRF8372R2 , MRF847 , MRF857 , MRF858 , MRF858S , MRF859 .

History: T1892 | L2SA1576ART1G

Keywords - MRF653S transistor datasheet

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