MRF860 Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: MRF860 📄📄
Material: Si
Polaridad de transistor: NPN
ESPECIFICACIONES MÁXIMAS
Disipación total del dispositivo (Pc): 71 W
Tensión colector-base (Vcb): 60 V
Tensión colector-emisor (Vce): 30 V
Tensión emisor-base (Veb): 4 V
Corriente del colector DC máxima (Ic): 1.9 A
Temperatura operativa máxima (Tj): 200 °C
CARACTERÍSTICAS ELÉCTRICAS
Transición de frecuencia (fT): 960 MHz
Capacitancia de salida (Cc): 21 pF
Ganancia de corriente contínua (hFE): 30
Encapsulados: CASE395B-01
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MRF860 datasheet
mrf860.pdf
MOTOROLA Order this document SEMICONDUCTOR TECHNICAL DATA by MRF860/D The RF Line NPN Silicon MRF860 RF Power Transistor Designed for 24 Volt UHF large signal, common emitter, class A linear amplifier applications in industrial and commercial equipment operating in the range of 800 960 MHz. CLASS A 800 960 MHz Specified for VCE = 24 Vdc, IC = 1.9 Adc Characteristics 13.7
mrf860re.pdf
MOTOROLA Order this document SEMICONDUCTOR TECHNICAL DATA by MRF860/D The RF Line NPN Silicon MRF860 RF Power Transistor Designed for 24 Volt UHF large signal, common emitter, class A linear amplifier applications in industrial and commercial equipment operating in the range of 800 960 MHz. CLASS A 800 960 MHz Specified for VCE = 24 Vdc, IC = 1.9 Adc Characteristics 13.7
mrf862 .pdf
MOTOROLA Order this document SEMICONDUCTOR TECHNICAL DATA by MRF862/D The RF Line NPN Silicon MRF862 RF Power Transistor Designed for 24 Volt UHF large signal, common emitter, class A linear amplifier applications in industrial and commercial equipment operating in the range of 800 960 MHz. CLASS A 800 960 MHz Specified for VCE = 24 Vdc, IC = 5 Adc Characteristics 36 W (C
mrf861.pdf
MOTOROLA Order this document SEMICONDUCTOR TECHNICAL DATA by MRF861/D The RF Line NPN Silicon MRF861 RF Power Transistor Designed for 24 Volt UHF large signal, common emitter, class A linear amplifier applications in industrial and commercial equipment operating in the range of 800 960 MHz. CLASS A 800 960 MHz Specified for VCE = 24 Vdc, IC = 3.75 Adc Characteristics 27
Otros transistores... MRF8372R1, MRF8372R2, MRF847, MRF857, MRF858, MRF858S, MRF859, MRF859S, 13007, MRF861, MRF862, MRF880, MRF890, MRF892, MRF896, MRF898, MRF911
Parámetros del transistor bipolar y su interrelación.
History: KT814A9 | CSA733P | NB211HH | MRF837 | DTA144EUB | 2SB937A
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